• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.05a
• /
• pp.469-470
• /
• 2012

• Journal of Information Display
• /
• v.7 no.2
• /
• pp.12-15
• /
• 2006

We propose a patterning method of liquid crystal (LC) alignment layer for producing multi-domain LC structures. By controlling thermal conditions during micro-contact printing procedures and facilitating wetting properties of patterning materials, patterned LC orientation can be easily obtained on a bare ITO surface or other polymer films. The newly proposed patterning method is expected to be a very useful tool for fabricating multi-domain LC structures to enhance or design electro-optic properties of LC-based devices.

• Laser Solutions
• /
• v.14 no.3
• /
• pp.7-11
• /
• 2011

As an active emission display using emissive polymer has had much attention recently, needs for a selective patterning of emissive layer for those displays have been increased abruptly. Therefore, the various laser sources in terms of its wavelength has been used for laser direct patterning. In this work, the feasibility of those processes is examined using numerical analysis and the experimental investigation. A sample has multi-layered structure, emissive polymer on aluminum which is deposited on a glass substrate. Key factors for optimizing the laser patterning of the emissive polymer are considered into the control of ablation products, large-sized particle, and the choice of the appropriate wavelength for minimizing the heat affected zone and the remnant layer.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.2
• /
• pp.183-188
• /
• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Laser Solutions
• /
• v.12 no.4
• /
• pp.1-5
• /
• 2009

Conventional patterning based on wet-process for multi-layered film is a relatively complex and costly process though it is a necessary step for fabrication of TFT-LCD module. Recently, a direct pattering by laser has been studied because it is low cost and simple process compared to the wet process. In this work, the selective removal process of multi-layered film (polyimide/indium tin oxide/glass) is studied by modeling the thermal and mechanical behavior for multi-layered structure. Especially, the effects of thickness of polyimide layer are examined.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.538-544
• /
• 2000

The laser patterning of sputter-deposited CoNdZr/Cu/CoNbZr multi-layered films had been tried using Nd:YAG laser. However generally it is very difficult to remove metal films because of their high reflectance of the laser on the surfaces. As a counterproposal for this problem authors for the first time tried to deposit energy-absorbing layers on the metal films and then irradiated the laser on the surfaces of energy-absorbing layers. Here the energy-absorbing layers consisted of laser energy-absorbing fine powders and binding polymers. Three kinds of powders for the energy-absorbing layers had been used to see the difference in the pattern formation with the degree of laser energy absorption. They were electrically conductive silver powders insulating BaTiO$_3$powder and semiconducting carbon powder. Remarkable difference in width of the formed pattern and the roughness of pattern edge were observed with the characteristic of the powder for the energy-absorbing layer. The pattern width using carbon paste was about three times larger than that using BaTiO$_3$paste. It was observed that the energy-absorbing layer with carbon was the most effective on this micro-patterning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.74-74
• /
• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Korean Journal of Materials Research
• /
• v.10 no.2
• /
• pp.171-174
• /
• 2000

In this study, the laser patterning of sputter-deposited amorphous CoNbZr films has been tried usig Nd: YAG laser. However, the metal film was not removed because of its high reflectance of the alser on the metal surface. To solve this problem, authors tried to screen-print a block polymer on the metal film and then irradiate the laser on the polymer. This is a new method which was suggested by this study. Using this new method, the metal films were effectively removed with the laser power of 114W even though the metal films was not removed with the laser power of 332W using the conventional method. This result leads to the conclusion that the block polymer acts as a laser energy absorbing and transferring layer.

• Journal of Electrical Engineering and Technology
• /
• v.6 no.2
• /
• pp.280-283
• /
• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of Electrical Engineering and Technology
• /
• v.6 no.2
• /
• pp.233-238
• /
• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.