• Journal of Aerospace System Engineering
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• v.15 no.6
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• pp.59-65
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• 2021

In this paper, the transmission characteristics of the multi-layered composite material with wire mesh and honeycomb core for aircraft applications have been analyzed with the proposed method. The proposed method converts the conductive wire mesh into effective layer, while for the dielectric honeycomb core, effective permittivity has been derived based on volume fraction with the proposed method. The proposed method has been verified through comparison with full-wave simulation and revealed excellent. In addition, the calculation time of the proposed method is a few order of magnitude faster in comparison with the full-wave simulation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.110-116
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• 2020

Grains in the BaTiO₃, which is used for a dielectric layer in MLCC(Multi-Layer Ceramic Capacitor) are necessary to form core/shell structure for a stable TCC(Temperature Coefficient of Capacitance) behavior. The shell property has been deduced from the whole TCC behavior of core/shell structure due to its tiny size, ~ few ㎛. This study demonstrates the individual TCC behavior of the shell phase measured by micro-contact measurement in a temperature range between 35 and 135℃. Pt electrode pairs deposited on an enlarged core/shell structure in a diffusion couple sample made the measurement possible. As a result, the DPT (Diffusion Phase Transition) behavior of the shell phase was revealed as a different TCC behavior from that of the core: a broad peak with T_m at 65℃. This would be also useful experimental data for a modelling that depicts dielectric-temperature behavior of core/shell structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Journal of Mechanical Science and Technology
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• v.17 no.6
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• pp.816-824
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• 2003

In this study, variations of cutting performance with pulse time, open circuit voltage, wire speed and dielectric fluid pressure were experimentally investigated in Wire Electrical Discharge Machining (WEDM) process. Brass wire with 0.25 mm diameter and AISI 4140 steel with 10 mm thickness were used as tool and work materials in the experiments. The cutting performance outputs considered in this study were surface roughness and cutting speed. It is found experimentally that increasing pulse time, open circuit voltage, wire speed and dielectric fluid pressure increase the surface roughness and cutting speed. The variation of cutting speed and surface roughness with cutting parameters is modeled by using a regression analysis method. Then, for WEDM with multi-cutting performance outputs, an optimization work is performed using this mathematical models. In addition, the importance of the cutting parameters on the cutting performance outputs is determined by using the variance analysis (ANOVA).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.171-174
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• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1527-1529
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• 2002

본 논문은 저손실 소형 대역통과 여파기인 기지국용 RF/Microwave 수동소자의 다중 공진 모드(Multi-Mode)에 관한 연구로 한개의 유전체 공진기(Dielectric Resonator)로 두개의 공진 모드(Dual-Mode)를 형성하고 그의 결합량을 조절하여 대역통과 여파기를 설계 및 제작하고, 기지국용 Dual-Mode 대역통과 여파기의 소형화, 경량화를 50%이상 향상시켜 양질의 Dual-Mode 공진 특성을 관찰하였다.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.673-678
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• 2015

Terahertz dual-band frequency selective surface filters made by perforating two different rectangular holes in molybdenum have been designed, fabricated and measured. Physical mechanisms of the dual-band resonant responses are clarified by three differently configured filters and the electric field distribution diagrams. The design process is straightforward and simple according to the physical concept and some formulas. Due to the weak coupling between the two neighboring rectangle holes with different sizes in the unit cell, good dual-band frequency selectivity performance can be easily achieved both in the lower and higher bands by tuning dimensions of the two rectangular holes. Three samples are fabricated, and their dual-band characteristics have been demonstrated by a THz time-domain spectroscopy system. Different from most commonly used metal-dielectric structure or metal-dielectric-metal sandwiched filters, the designed dual-band filters have advantages of easy fabrication and low cost, the encouraging results afforded by these filters could find their applications in dual-band sensors, THz communication systems and other emerging THz technologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.189-190
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• 2008

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated. The band structure of stacked tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with that of the conventional tunneling barrier. The band-gap engineered tunneling barriers show the lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.139.2-139.2
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• 2013

6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3 ${\mu}m/min$ when the scan time is 45 sec.