• Journal of the Korean Geotechnical Society
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• v.15 no.2
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• pp.29-42
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• 1999

The SASW (Spectral-Analysis-of-Surface-Waves) method, which evaluates the stiffness structure of the subsurface and structures nonintrusively and nondestructively, has been successfully used in the civil engineering applications. However, the SASW method assumes that the subsurface or structures consist of horizontal multi-layers, so that the method has some difficulty in continuously evaluating the integrity of a tunnel lining and a pavement system. This difficulty prevents the SASW method from being used to generate a tomographic image of stiffness for the subsurface or structures. Recently, the GPR technique which has the advantage of continuously evaluating integrity of the subsurface and structures has been popular. This advantage of GPR technique initiated the efforts to make the SASW method, which is superior to GPR and other nondestructive testing methods due to its capability of evaluating stiffness and modulus, be able to do continuous evaluation of stiffness structure, and the efforts finally lead to the development of \ulcornerTomographic SASW Technique.\ulcorner Tomographic SASW technique is a variation of the SASW method, and can generate a tomographic image of stiffness structure along the measurement line. The tomographic SASW technique was applied to the investigation of lateral variability of a sand box placed by the raining method for the purpose of verifying its effectiveness. Tomographic SASW measurements on the sand box revealed that the investigated sand box has different shear stiffness along the measurement line, which gave a clue of how to make a better raining device.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.1115-1123
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• 2008

When constructing projects such as road embankments, bridge approaches, dikes or buildings on soft, compressible soils, significant settlements may occur due to the consolidation of these soils under the superimposed loads. The compressibility of the soil skeleton of a soft clay is influenced by such factors as structure and fabric, stress path, temperature and loading rate. Although it is possible to determine appropriate relations and the corresponding material parameters in the laboratory, it is well known that sample disturbance due to stress release, temperature change and moisture content change can have a profound effect on the compressibility of a clay. The early research of Tezaghi and Casagrande has had a lasting influence on our interpretation of consolidation data. The 24 hour, incremental load, oedometer test has become, more or less, the standard procedure for determining the one-dimensional, stress-strain behavior of clays. An important notion relates to the interpretation of the data is the ore-consolidation pressure ${\sigma}_p$, which is located approximately at the break in the slope on the curve. From a practical point of view, this pressure is usually viewed as corresponding to the maximum past effective stress supported by the soil. Researchers have shown, however, that the value of ${\sigma}_p$ depends on the test procedure. furthermore, owing to sampling disturbance, the results of the laboratory consolidation test must be corrected to better capture the in-situ compressibility characteristics. The corrections apply, strictly speaking, to soils where the relation between strain and effective stress is time independent. An important assumption in Terzaghi's one-dimensional theory of consolidation is that the soil skeleton behaves elastically. On the other hand, Buisman recognized that creep deformations in settlement analysis can be important. this has led to extensions to Terzaghi's theory by various investigators, including the applicant and coworkers. The main object of this study is to suggestion the modified compression index value to predict settlements by back calculating the $C_c$ from different numerical models, which are giving best prediction settlements for multi layers including very thick soft clay.

• Korean Journal of Plant Taxonomy
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• v.40 no.1
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• pp.50-58
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• 2010

The nutlet morphology and pericarp structure of 14 taxa (4 taxa of the genus Glechoma and related taxa) were studied by light and scanning electron microscopy, and a detailed description of nutlet morphological features for all examined taxa is provided. The shape of the nutlet is ovate to elliptic. Its size is 1.36-3.83 mm in length and 0.80-2.65 mm in width. The largest one was found in Marmoritis rotundifolia, while the smallest one was in Agastache nepetoides. Three different surface types were recognized in the studied taxa based on differences in cell outline and cell boundary relief (rectangular, pitted, and ridged negative reticulate-cell). Three types of trichome (uni-cellular non-glandular trichome, multi-cellular non-glandular trichome, and peltate glandular trichome) were distributed in the nutlets. The pericarp is formed in three layers (i.e., exocarp, mesocarp, and endocarp including sclenchyma tissue), and the pericarp in the studied species is $39.0-237.5{\mu}m$ thick. The morphological and anatomical features (the nutlet shape, surface type, and trichome distribution) in the genus Glechoma and related taxa are described and discussed.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.165-170
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• 2000

The purpose of this study is to investigate the effect of annealing conditions on physical and magnetic properties of Fe-Hf-N thin films. When the thin films were annealed in $N_2$ gas, a surface oxide layer, comprised of Fe$_2$O$_3$ and Fe$_3$O$_4$, was formed at the surface of the thin films and a Fe-Hf-O-N layer was also formed under this surface oxide layer. It was found that the thicknesses of the surface oxide layer and the Fe-Hf-O-N layer increased, as the annealing temperature increased. It was also found that if the thickness of the surface oxide layer was excluded in the property calculation, the soft magnetic properties of the annealed thin films were not much different from those of the as-deposited thin films. Therefore, it was suggested that the Fe-Hf-O-N layer formed under the surface oxide layer did not lose significantly the soft magnetic properties of the Fe-Hf-N films and the Fe-Hf-N films annealed in $N_2$gas showed the soft magnetic properties of the Fe-Hf-N and Fe-Hf-O-N multi-layers.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• Analytical Science and Technology
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• v.18 no.6
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• pp.511-519
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• 2005

A method for determination of toluene diisocyanates (TDI) in toluene diisocynate (TDI)-based polyurethane (PUR) packing material was investigated, and also the migration of TDI to food was studied. TDI was extracted using food simulants such as n-haptane and 4% aqueous acetic acid. The determinations were performed using gas chromatography/mass spectrometry (GC/MS). One of major components for polyurethane, toluene diisocyanates, were detected in ten samples among twenty six food contact materials with the concentration range of $0.51{\sim}60.88{\mu}g/ml$. However the highest extracted amount was just 0.7% of $60.88{\mu}g/ml$ if the contact surface of food packing for extracting liquid was limited to the outer layer without exposure of the cutting edge of food packing multi-layers. The result of this study and the analysis method for TDI diisocyanate will be very useful for further study about food contact material, and the monitoring result could be used for evaluating the safety of food contact material before it is to be used for food, preservation.

• Korean Journal of Remote Sensing
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• v.31 no.6
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• pp.561-570
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• 2015

Till now, applications of many kinds of satellite images have been accentuated in the datacentric scientific studies, researches regarding system development and concerned technologies for them are on the un-matured stage. Especially, satellite image processing requires large volume data handling and specific analysis functionalities, so that practical necessity of base study for system development is emphasized on. In the view of information system, various edged trends such as web standards, cloud computing, or web framework are utilized owing to their application benefits proven and business needs. Considered these aspects, a testing implementation was carried out using OpenStack cloud computing environment and e-government framework. As for the processing functions, WPS in GeoServer, as one of OGC web standards, was applied to perform interoperable data processing scheme between two or more remote servers. Working with the server implemented, client-side was also developed using several open sources such as HTML 5, jQuery, and OpenLayers. If it is that completed further experiments onsite applications with actual multi-data sets and extension of on-demand functionalities with the result of this study, it will be referred as an example case model for complicated and complex system design and implementation which needs cloud computing, geo-spatial web standards and web framework.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.