• Journal of the Korean Society of Environmental Restoration Technology
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• v.6 no.2
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• pp.78-88
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• 2003

This study was conducted to develop the plant-mat for ecological restoration which was formed as the thin multi-layers of woven nets, soil media, seeds, etc. The experimental site was selected at a slope of 240$m^2$ at the rear of Design College of Sangmyung University and divided into 8 sub-experimental plots (20$m^2$ each) according to mat types. (forest-type and grass-type mats with and without seed attachment, respectively) Also, the existing vegetation plot and the no-treatment plot were included in this experiment for comparison. The experiment construction was conducted on September 3, 2002. Mat covered plots regardless of seed attachment showed nearly no signs of erosion even if rainy season in summer compared to the no-treatment plot. Vegetation monitoring result showed that germination rates were somewhat high in both forest and grass-type mats without seed attachment in the initial germination stage. Although germination rates of seed attached mats were somewhat slower than non-seed attached mats in the germination stage, but over time, it showed a good rooting and shooting environment for germinated tree and grass species because of soil media existence within the mat. This indicates that while non seed-attached mats require follow-up maintenance, seed-attached mats does not require maintenance after rooting and germination.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.118-122
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• 2003

Using low pressure metalorganic chemical vapor deposition (MOCVD), we have developed selectively area epitaxy (SAE). Using the developed SAE technology, we have grown AlGaAs/GaAs multi layers and InGaAs/GaAs quantum wire structures on the selectively $SiO_2$ masked GaAs substrates. We have obtained triangular shaped AlGaAs/GaAs and InGaAs/GaAs structures with sharp tips and smooth sidewalls. To rod the optimum conditions, several growth parameters such as growth rate, V/III ratio, growth temperature, and direction of the opening stripes were investigated. The emission peak from quantum wires was observed at 975 nm. With increasing of temperature the emission intensity from side wall quantum wells decreased abruptly. But the intensity from Quantum wires decreased slowly compared to that of side wall quantum wells and it became even stronger from above 50 K.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.51-57
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• 2010

Brittle microstructure created in a heat affected zone (HAZ) during the welding of low alloy steel can be eliminated by post-weld heat treatment (PWHT). If the PWHT is not possible during a repair welding, the controlled bead depositions of multi-pass welding should be applied to obtain tempering effect on the HAZ without PWHT. In order to anticipate and control the tempering effect during the temper bead welding, the definition of temperature curve obtained from the analytical solution was suggested in this research. Because the analytical solution for heat flow is expressed as a mathematical equation of weld parameters, it may be effective in anticipating the effect of each weld parameter on the tempering in HAZ during the successive bead depositions. The reheating effect by the successive bead layer on the brittle coarse grained HAZ formed by earlier bead deposition was estimated by comparing the overlapped distance between the temperature curves in the HAZ. Three layered weld specimens of SA508 base metal with A52 filler were prepared by controlling heat input ratio between layers. The tempering effect anticipated by using the overlapped distance between the temperature curves was verified by measuring the micro-hardness distribution in the HAZ of prepared specimens. The temperature curve obtained from analytical solution was expected as a good tool to find optimal temper bead welding conditions.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.12
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• pp.1563-1568
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• 2012

Printed electronics is a technology used for forming electronic circuits or devices, and it is used in the manufacture of many products such as RFID tags, solar cells, and flexible display panels with a much lower cost than in the case of semiconductor process technology. Web-guide-type printing such as roll-to-roll printing is a method used to produce printed electronic devices in a large volume. To commercialize such products, highly precise alignment between printed layers is required. In this study, a highly precise alignment system is proposed, and some experimental results are compared with those obtained using a laser surface vibrometer to illustrate the reliability of the proposed system. The robustness of the proposed system to web deformation is also considered experimentally.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.4 no.5
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• pp.859-876
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• 2010

In this paper, we propose a hierarchical application traffic classification system as an alternative means to overcome the limitations of the port number and payload based methodologies, which are traditionally considered traffic classification methods. The proposed system is a new classification model that hierarchically combines a binary classifier SVM and Support Vector Data Descriptions (SVDDs). The proposed system selects an optimal attribute subset from the bi-directional traffic flows generated by our traffic analysis system (KU-MON) that enables real-time collection and analysis of campus traffic. The system is composed of three layers: The first layer is a binary classifier SVM that performs rapid classification between P2P and non-P2P traffic. The second layer classifies P2P traffic into file-sharing, messenger and TV, based on three SVDDs. The third layer performs specialized classification of all individual application traffic types. Since the proposed system enables both coarse- and fine-grained classification, it can guarantee efficient resource management, such as a stable network environment, seamless bandwidth guarantee and appropriate QoS. Moreover, even when a new application emerges, it can be easily adapted for incremental updating and scaling. Only additional training for the new part of the application traffic is needed instead of retraining the entire system. The performance of the proposed system is validated via experiments which confirm that its recall and precision measures are satisfactory.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.506-510
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• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing