• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.39-45
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• 1998

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

• Journal of Korea Foundry Society
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• v.20 no.6
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• pp.377-385
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• 2000

Al matrix composites as the most promising MMCs can be expected to be excellent engineering materials in the nearest future. So as to improve material properties of composite, many manufacturing processes have been developed. Among them, squeeze casting process which offers fine microstructure and near-net-shape is one of the most successful MMCs manufacturing processes. But, in case of with subsieve size particles (under 44 ${\mu}m$), it is very difficult to homogeneously distribute particles in matrix of Al matrix composite by various casting processes, including squeeze casting used so far. Duplex process which was developed in previous study was used to distribute the particle of subsieve size more homogeneously in matrix of Al matrix composite. Microstructures, wear and heat resistance characterization of Al-Si-Cu-Mg-(Ni)/SiCp manufactured by duplex process were examined to clarify the effect of manufacturing conditions, particle size of reinforcement and alloying elements. Al matrix composites reinforced with SiCp(10 ${\mu}m$) have the lowest wear amount among composites reinforced with 3 ${\mu}m$, 5 ${\mu}m$ and 10 ${\mu}m$ SiCp. The wear amount of Al matrix composites with 10 wt.% SiCp(3, 5, 10 ${\mu}m$) was decreased according to the increase of the sliding speed because abrasive wear takes place at high sliding speed of 4m/s and worn debris with block type occurs at low sliding speed of 1m/s. As for heat resistance, it is made clear that remarkable heat resistance property can be obtained by addition of Ni element in Al matrix composites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.223-227
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• 2001

In this paper, the authors present the fabrication of high-yield Si thin-membranes by electrochemical etch-stop in tetramethyl ammonium hydroxide (TMAH): isopropyl alcohol (IPA):pyrazine solutions. The current-voltage (I-V) characteristics of n- and p-type Si in TMAH:IPA;pyrazine solutions were analysed, repsectively. Open circuit potential (OCP)and passivation potential (PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was applied to the fabrication of 801 micro-membranes with 20.0 $\mu\textrm{m}$ thickness on a 5" Si wafer. The average thickness of fabricated 801 micro-membranes on one wafer 20.03$\mu\textrm{m}$ and the standard deviation was ${\pm}$0.26$\mu\textrm{m}$. The Si surface of the etch-stopped micro-membranes was extremely flat with no noticeable taper or nonuniformity. The results indicate that use of the electrochemical etch-stop method for the etching of Si in TMAH:IPA;pyrazine solutions provides a powerful and versatile alternative process for fabricating high-yield Si micro-membranes.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1178-1186
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• 2000

타일의 내마모성과 내산성을 향상시키기 위해 결정화유리가 최근에 새로운 유약 재료로서 소개되고 있다. 신 유약의 연구에 사용된 조성은 $Ca_2$ZrSi$_4$O$_{12}$ 상에 근접하는 CaO-ZrO$_2$-SiO$_2$계의 유리조성의 분말로, 마이크로파 가열 (2.45 GHz)에 의해서 900-120$0^{\circ}C$의 0-20분간 소성되어 평가되었다. 그 결과, 100$0^{\circ}C$ 이상에서 소성한 시편은 내부 결정화를 나타내었으며, 결정상은 미세(5$mu extrm{m}$)한 크기를 갖는 $Ca_2$ZrSi$_4$O$_{12}$가 주 결정상이며, $Ca_2$ZrSi$_4$O$_{12}$, CaSiO$_3$, SiO$_2$의 세 상이 나타났다. 소결체의 미세구조는 사용한 유리분말의 입도의 영향을 받았다. 미세분말 (<38$\mu\textrm{m}$)을 이용한 소결체의 조직이 조세분말 (45-150$\mu\textrm{m}$)의 경우보다 수축율면에서 높았으며 낮은 기공도를 갖는 미세구조를 가졌다. 마이크로파에 의한 유리분말의 소성은 1000-120$0^{\circ}C$ 구간에서 10분 이내 결정화가 완료되는 급속 가열 공정이었으며 CaO-ZrO$_2$-SiO$_2$계 결정화 유리 제조에 균일한 체적가열을 할 수 있었다.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.26-32
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• 2003

Then-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) method on glass were measured to obtain the electrical parameters such as of I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. Then, devices were analyzed to obtain the reliability and appliability on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 5$\mu\textrm{m}$/2$\mu\textrm{m}$, 8$\mu\textrm{m}$, 30$\mu\textrm{m}$ devices of channel width/length, the field effect mobilities are 111, 116, 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus. the poly-Si TFT's used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate the display panel and peripheral circuit on a targe glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.233-237
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• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.349-353
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• 2016

We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.157-162
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• 2010

Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.