• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.419-425
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• 2017

This paper presents CMOS UWB RFIC based radar system for high speed target detection. The system can achieve resolution of 15 cm and detection range of 15 m. For developed system, single chip CMOS UWB IC is implemented. To reduce the measuring and processing time, envelope detection and equivalent time sampling technique are used. Measurement results show that the bandwidth and center frequency of UWB pulse can be adjusted in the range of 0.5 GHz~1.0 GHz, 3.5 GHz~4.5 GHz, respectively. Signal processing time including scan time over 15 m distance is about $150{\mu}sec$.

• The Journal of Advanced Prosthodontics
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• v.10 no.3
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• pp.245-251
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• 2018

PURPOSE. To evaluate the accuracy of a model made using the computer-aided design/computer-aided manufacture (CAD/CAM) milling method and 3D printing method and to confirm its applicability as a work model for dental prosthesis production. MATERIALS AND METHODS. First, a natural tooth model (ANA-4, Frasaco, Germany) was scanned using an oral scanner. The obtained scan data were then used as a CAD reference model (CRM), to produce a total of 10 models each, either using the milling method or the 3D printing method. The 20 models were then scanned using a desktop scanner and the CAD test model was formed. The accuracy of the two groups was compared using dedicated software to calculate the root mean square (RMS) value after superimposing CRM and CAD test model (CTM). RESULTS. The RMS value ($152{\pm}52{\mu}m$) of the model manufactured by the milling method was significantly higher than the RMS value ($52{\pm}9{\mu}m$) of the model produced by the 3D printing method. CONCLUSION. The accuracy of the 3D printing method is superior to that of the milling method, but at present, both methods are limited in their application as a work model for prosthesis manufacture.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.334-338
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• 2012

Electrical isolation of Ag nanowire, which is one of the candidates as electrode for display devices, on polymer with femtosecond pulse laser has been investigated. Line patterning to Ag nanowire with various pulse energy and scan speed were experimented. Duo to the results of the line patterning experiment, we fabricated the isolated squares and measured electrical resistance. The profile of the selectively ablated area was analyzed with AFM(Atomic Force Microscope). The width of the patterned line was $1.8\;{\mu}m$ and the depth was $1.6\;{\mu}m$. We demonstrated electrical isolation of the Ag nanowire using femtosecond laser by evaluating the electrical resistance of the sample between isolated and opened area.

• Journal of the Korean Applied Science and Technology
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• v.16 no.3
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• pp.205-210
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• 1999

The Mo(V) $di-{\mu}-oxo$ type $[Mo_2O_4(H_2O)_2L]Cl_2$ complexes(L: 4,4'-Diphenyl-2,2'-dipyridyl, 4,4'-Dimethyl-2,2'-dipyridyl, 4,7-Diphenyl-1,10-phenanthroline) have been prepared by the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with a series of chelate ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate types. In $Mo_2O_4(H_2O)_2L$ two $H_2O$ coordinated at trans site of terminal oxgens. The prepared complexes have been characterized by elemental analysis, infrared spectra, electronic spectra, $^1H$ nuclear magnetic resonance spectra, and thermal analysis(TG-DTA). In the potential range -0.00V to -1.00V at scan rate of $50mVs^{-1}$, a cathodic peak at -0.83V ${\sim}$ -0.88V (vs SCE) and an anodic peak at -0.54V ${\sim}$ -0.88V (vs SCE) have been observed in aquous solution. The ratio of the cathodic to anodic current(Ipc/Ipa) is almost 2, we infer that redox is irreversible as dimer forms broken.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.547-552
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• 2005

We have fabricated and characterized optical delay lines for optical coherence tomography, which is composed of cylindrical PZT(piezoelectric transducer) and single mode optical fiber. The polarization mode dispersion from the optical delay lines was compensated by the polarization controllers. By applying the duplex optical delay line, we minimized the thermal drift due to optical delay lines and obtained the scan range of 2 times that of a single optical delay line. The OCT system showed resolution of $18.6\pm0.5{\mu}m$, scanning range of 1.68mm, and scanning speed of 360.4mm/s.

• Journal of the Korean Applied Science and Technology
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• v.18 no.4
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• pp.254-260
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• 2001

The Mo(V) $di-{\mu}-oxo$ type [$Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$] $SO_{4}$ complexes(L: 2,2'-dipyridyl,4,4'-ethylenedianlline) have been prepared by the reaction of $[Mo_{2}O_{4}(H_{2}O)_{6}]SO_{4}$ with a series of chelate ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate types. In $Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$, two $H_{2}O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, $^{1}H$ nuclear magnetic resonance spectra, and thermal analysis(TG-DTA). In the potential range -0.00V to -1.00V at a scan rate of $50mVs^{-1}$, a cathodic peak at -0.81V ${\sim}$ -0.87V (vs SCE) and an anodic peak at -0.61V ${\sim}$ -0.63V (vs SCE) have been observed in aquous solution. We infer these redox are irreversible reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.473-476
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• 1997

Focused Ar ion laser beam can be utilized to fabricate microstructures on silicon substrate as well as other materials(e.g. such as ceramic). The laser using in this study is an argon ion laser with maximum power of 6 W, wavelength of 514 nm. This laser beam is focused by objectives with a high numerical aperture, a long working distance. We have achieved line width about 1 ${\mu}{\textrm}{m}$ with high scan speed. The resolution for Si machining is determined by the selectivity of the chemical reaction rather than the laser spot size. In this study, we have obtained the maximum etch rate of 434.7 ${\mu}{\textrm}{m}$/sec with high aspect ratio. The characteristics of etched groove was investigated by scanning electron microscope(SEM) and auger electron spectroscopy(AES). It is assumed that the technique using arson ion laser is applicab1e to fabricate microstructures.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1730-1736
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• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.969-975
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.74-77
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• 2011

We report a novel extension of 840 nm wavelength- based spectral domain optical tomography to in vivo/real-time human middle ear diagnosis. The system was designed to access the middle ear region with a specifically dedicated handheld probe. The real-time displaying feature was mandatory for in vivo imaging human subject with the handheld probe, and the system could provide about 20 frames per second for 2048 pixels by 1000 A-scans without using any graphics process units under the Labview platform. The inner ear structure of a healthy male volunteer was imaged with the developed system with the axial and lateral resolutions of $15\;{\mu}m$ and $30\;{\mu}m$, respectively. The application of the OCT technology to early diagnose otitis media(OM) is very promising and could be another extensive branch in the OCT field because it provides the depth resolved image including tympanic membrane (TM) and structures below TM whereas the conventional otoscope technique only gives asurface image of the TM.