• The Journal of Korean Academy of Prosthodontics
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• v.60 no.3
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• pp.293-300
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• 2022

Various materials and restorative options have been introduced recently with growing interest in esthetic dental treatment in modern society. Zirconia is especially known for its biocompatibility as well as remarkable toughness and resistance to wear, but it is limited in its use for esthetically focused treatment in anterior region for its white opacity. Lately the development of different kinds of zirconium blocks, such as colored block, clear block, and multi-layered block, allowed more extensive use of zirconia as a treatment option. This report describes a case, in which a prosthetic crown maxillary anterior region was stained with a combination of various coloring liquids before sintering to reproduce natural-looking color scheme in final restoration. The case was reported as the utilization of coloring liquid on monolithic zirconia crown could achieve esthetically satisfying prosthesis for both dentist and patient.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.3A
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• pp.421-428
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• 2006

This study was performed by using experiment to minimize behavior difference of Monolithic and segmental Girder and to prove the design concept of the PSI (Precast PSC-Segmental I Grider). A full scale girder test was performed in four different cases, the monolithic girder, the segmental girder type-1, the segmental girder type-2 and the segmental girder type-3. The monolithic girder that was produced in one body 25 m span and the segmental girder that was jointed 5-sliced 5 m segment. The girder was built by as one body prestressing the tendons after manufacturing the segmental girder, and second prestressing after the casting of the slab concrete. The test result shows that the measured values were almost same or slightly bigger than the theoretical values which means that the PSI girder bridges concept came out to be reliable.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.30 no.3A
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• pp.287-295
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• 2010

The main purpose of this study is to investigate the static behavior of spliced prestressed concrete girder with bending moment connector and lateral prestressing. Four (4) spliced girders and one (1) monolithic girder had been fabricated and tested to compare their static behaviors. Same geometry and materials are used to fabricate these spliced and monolithic girders. A monolithic girder and one (1) spliced girder without lateral bending connector are used as control specimens to estimate the performance of three (3) spliced girders with lateral bending connector. Deflections at the middle of girders have been measured for evaluation. Also, strains of the concrete at the middle of span and connection points have been measured. It was found from the result that laterally strengthened spliced girders showed improved ultimate strength but less stiffness compared to the monolithic girder at the ultimate state. Laterally strengthened spliced girder also showed improved strength as well as improved stiffness compared to the spliced girder without lateral strengthening.

• ETRI Journal
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• v.25 no.1
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• pp.19-24
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• 2003

This paper describes the performance of a Ku-band 5-bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5-bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than $7.5{\circ}$ root-mean-square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5-bit phase shifter, the insertion losses were $8.2{\pm}1.4$dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5- bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm ${\times}$1.65 mm. The packaged phase shifter demonstrated a phase error of less than $11.3{\circ}$ RMS, measured insertion losses of 12.2 ${\pm}$2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm${\times}$ 6.20 mm.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3233-3240
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• 2012

We demonstrated the combined applications of online protein digestion using trypsin immobilized enzyme reactor (IMER) and dual tandem mass spectrometry with collisionally activated dissociation (CAD) and electron transfer dissociation (ETD) for tryptic peptides eluted through the trypsin-IMER. For the trypsin-IMER, the organic and inorganic hybrid monolithic material was used. By employing the trypsin-IMER, the long digestion time could be saved with little or no sacrifice of the digestion efficiency, which was demonstrated for standard protein samples. For three model proteins (cytochrome c, carbonic anhydrase, and bovine serum albumin), the tryptic peptides digested by the IMER were analyzed using LC-MS/MS with the dual application of CAD and ETD. As previously shown by others, the dual application of CAD and ETD increased the sequence coverage in comparison with CAD application only. In particular, ETD was very useful for the analysis of highly-protontated peptide cations, e.g., ${\geq}3+$. The combination approach provided the advantages of both trypsin-IMER and CAD/ETD dual tandem mass spectrometry applications, which are rapid digestion (i.e., 10 min), good digestion efficiency, online coupling of trypsin-IMER and liquid chromatography, and high sequence coverage.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.35-39
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• 2016

The flexible and superhydrophobic properties of silica aerogels are extremely important material for thermal insulation and oil spill cleanup applications for their long-term use. Flexible silica aerogels were synthesized by using a two-step sol-gel process with precursors, methyltrimethoxysilane (MTMS) followed by supercritical drying. Silica aerogels were prepared at different molar ratio of methanol to MTMS (M). It was observed that the silica aerogels prepared at M=28 were monolithic but inelastic in nature, however, for M=35, the obtained aerogels were monolithic, elastic in nature with less shrinkage. The microstructural studies were carried out using scanning electron microscopy and surface area measurements. The hydrophobicity was confirmed by Fourier transform Infrared spectroscopy and water contact angle measurements. The detailed insight mechanism for flexible nature of silica aerogels and hydrophobic behavior were studied.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.40-44
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• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.8-13
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• 2005

The InGaP/GaAs hetero-junction bipolar transistor(HBT) monolithic voltage-controlled dielectric resonator oscillator(VCDRO) is first demonstrated for a Ku-band low noise block down-converter(LNB) system. The on-chip voltage control oscillator core employing base-collector(B-C) junction diodes is proposed for simpler frequency tuning and easy fabrication instead of the general off-chip varactor diodes. The fabricated VCDRO achieves a high output power of 6.45 to 5.31 dBm and a wide frequency tuning range of ]65 MHz( 1.53 $\%$) with a low phase noise of below -95dBc/Hz at 100 kHz offset and -115 dBc/Hz at ] MHz offset. A]so, the InGaP/GaAs HBT monolithic DRO with the same topology as the proposed VCDRO is fabricated to verify that the intrinsic low l/f noise of the HBT and the high Q of the DR contribute to the low phase noise performance. The fabricated DRO exhibits an output power of 1.33 dBm, and an extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at ] MHz offset from the 10.75 GHz oscillation frequency.

• Rapid Communication in Photoscience
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• v.4 no.4
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• pp.82-85
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• 2015

Photoelectrochemical cell (PEC) is one of the attractive ways to produce clean and renewable energy. However, solar to hydrogen production via PEC system generally requires high external bias, because of material's innate electronic band potential relative to hydrogen reduction potential and/or charge separation issue. For spontaneous photo-water splitting, here, we design dye-sensitized solar cell (DSSC) and their monolithic tandem cell incorporated with a $BiVO_4$ photoanode. $BiVO_4$ has high conduction band edge potential and suitable band gap (2.4eV) to absorb visible light. To achieve efficient $BiVO_4$ photoanode system, electron and hole mobility should be improved, and we demonstrate a tandem cell in which $BiVO_4/WO_3$ film is connected to cobalt complex based DSSC.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.173-174
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• 2018

This paper compared the electrical coupling of the monolithic 3D inverter consisting of MOSFET and JLFET. In the case of both the MOSFET and the JLFET, MOSFET and JLFET have a small threshold voltage variation when the thickness of inter-layer dielectric (ILD) = 100 nm. However, when the thickness of ILD = 10 nm, the threshold voltage variation is larger and the JLFET is twice as much as the MOSFET.