• Title/Summary/Keyword: Mode Suppression Ratio

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Fabrication of gratings in Planar Lightwave Circuits for External Cavity Laser (외부 공진기 레이저 구현을 위한 평면도파로 격자 제작)

  • Lim, Jong-Hoon;Lim, Gun;Lee, Kyung-Shik;Song, Jeong-Hwan;Cho, Jae-Geol;Jung, Sun-Tae;Oh, Yun-Kyung
    • Korean Journal of Optics and Photonics
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    • v.15 no.6
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    • pp.490-494
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    • 2004
  • Bragg gratings were fabricated in Ge-doped silica planar lightwave circuits (PLC) for different writing conditions to study the growth characteristics. The refractive index modulation of the gratings grew in the PLC with total fluence F according to the power law $\Delta$n=A $F^{B}$. The characteristics of the PLC gratings formed for external cavity lasers match closely to those predicted by the power law. The oscillation spectra of the FP-LD with a Bragg grating grown in the PLC waveguide were also presented.d.

Wide Tuning and Modulation Characteristics Analysis of Coupled-Ring Reflector Laser Diode (결합 링 반사기 레이저 다이오드의 광대역 파장 가변 및 변조 특성 해석)

  • Yoon, Pil-Hwan;Kim, Su-Hyun;Chung, Young-Chul
    • Korean Journal of Optics and Photonics
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    • v.17 no.6
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    • pp.544-547
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    • 2006
  • A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

Time-domain Large-signal Modeling of Injection-locked Fabry-Perot Laser Diode for WDM-PON (WDM-PON용 주입 잠금 패브리-페롯 레이저 다이오드의 시영역 대신호 모델링)

  • Lee, Seung-Hyun;Kim, Gun-Woo;Chung, Young-Chul
    • Korean Journal of Optics and Photonics
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    • v.21 no.2
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    • pp.74-81
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    • 2010
  • A modeling methodology for the analysis of injection-locked Fabry-Perot laser diodes (FP-LDs), promising for cost-effective WDM-PON sources, is proposed. The time-domain large-signal model that is used is found to provide quite similar results to some experimental ones. With our methodology, we model characteristics of FP-LDs, such as influence of reflectivity at a facet and detuning on injection-locking. The eye diagram characteristics are also investigated. It is observed that the facet reflectivity at the injection side should be lower than 1% to provide stable operation in terms of good side-mode suppression ratio and independence from detuning between narrow-band injection noise and LD modes. It is also observed that good eye opening can be obtained for 155 Mbps modulation while the parameters such as the active region thickness should be properly optimized to obtain reasonable eye opening at 1.25 Gbps.

1.55 μm continuous tuning external cavity laser (1.55 μm 연속 가변 외부 공진기형 레이저)

  • 김강호;권오기;심은덕;이동훈;김종회;김현수;오광룡;김동유
    • Korean Journal of Optics and Photonics
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    • v.14 no.3
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    • pp.321-326
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    • 2003
  • We constructed grating- tuned external cavity semiconductor lasers using Littman and Littrow configuration, for which the wavelengths are tuned by rotation of the grating. This wavelength tunable semiconductor laser is one of the main devices of WDM optical communication. In Littman configuration, the wavelength range of about 60 nm (The C- and L-band range of 1,530~1,590 nm) was obtained by changing the incidence angle of the grating about $\pm$1$^{\circ}$ from the incidence angle of 70$^{\circ}$. In the 40 nm tuning range, the output power variation was less than 1.25 ㏈ and the side mode suppression ratio(SMSR) was 32 ㏈. In Littrow configuration (The incidence angle and the first order diffraction angle is the same, i.e. $\alpha$=$\delta$), the wavelength tuning range was about 80 nm for the same conditions used in Littman configuration except the incidence angle ($\alpha$=49$^{\circ}$). In 60 nm tuning range, the output power variation was less than 1.5 ㏈ and SMSR was 35 ㏈.

Fabrication and performance analysis of cost-effective fiber grating lasers for WDM-PON systems (WDM-PON 시스템용 저가형 Fiber Grating Laser의 제작 및 성능 분석)

  • Cho, Seung-Hyun;Lee, Woo-Ram;Lee, Jie-Hyun;Park, Jae-Dong;Kim, Byoung-Whi;Kang, Min-Ho;Shin, Dong-Wook
    • Korean Journal of Optics and Photonics
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    • v.16 no.1
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    • pp.13-20
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    • 2005
  • Fiber-Bragg-grating external cavity laser(FGL) modules were fabricated and experimentally analyzed. Proposed as a cost-effective solution for optical sources in the WDM-PON access network, FGL modules were packaged to TO-CAN type. We obtained a low threshold current of 13 mA, and an optical output power of 3.6 mW with a bias current of 60 mA at $25^{\circ}C$. The lasing wavelength dependencies on current and temperature were as small as 5.2 pm/mA and 30 pm/$^{\circ}C$, respectively. These change rates of the wavelength with the temperature and current are smaller than those of the DFB laser. Single-mode oscillations with the side-mode suppression ratio(SMSR) over 30 dB are maintained above the threshold current level. The FGL modules can be directly modulated at 155 Mbps, PRBS(2$^{23}$ -1) NRZ signal. Through the BER plots, we did not see the significant degradations before and after the transmission over 20km of the SMF at 155 Mb/s.

Design and Fabrication of butt-coupled(BT) sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD) using planar buried heterosture(PBH) (저 전류 및 고 효율로 동작하는 양자 우물 매립형 butt-coupled sampled grating distributed bragg reflector laser diode 설계 및 제작)

  • Oh Su Hwan;Lee Chul-Wook;Kim Ki Soo;Ko Hyunsung;Park Sahnggi;Park Moon-Ho;Lee Ji-Myon
    • Korean Journal of Optics and Photonics
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    • v.15 no.5
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    • pp.469-474
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    • 2004
  • We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.