• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.3
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• pp.217-222
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• 2012

Using modal transmission-line theory (MTLT), it explores rigorously the polarization characteristics of plasmonic optical polarizer. To verify the validity of the approach proposed in this paper, a novel polarization condition, which is called mode suppression ratio, is defined. The numerical results reveal that the polarization length of plasmonic optical polarizer is $10{\mu}m$ dramatically shorter than that of conventional dielectric optical polarizer. Furthermore, the insertion loss of plasmonic polarizer consisting of metal Ag is small enough to be neglected below -1dB.

• Journal of Institute of Control, Robotics and Systems
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• v.5 no.5
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• pp.540-549
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• 1999

In this paper, the vibration suppression scheme based on a model referece approach is proposed. The vibration results from the coupling of the system and its frequency are given by the mechanical factors. In the proposed scheme, a low frequency vibration mode is transferred to high one. And also its damping ratio can be increased without any mechanical redesign. Therefore, bandwidth and open loop gain of the plant are increased and the performance of the system can be improved. This paper analyzes the proposed vibration suppression scheme, which is compared with the conventional control scheme for mechanical resonance suppression. For proving the realistic validity, we apply the proposed scheme to a LOS(Line Of Sight) stabilization system which has vibration effect. Finally, the proposed scheme is verified through simulations and experiments.

• Journal of electromagnetic engineering and science
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• v.11 no.2
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• pp.105-112
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• 2011

In phase-locked frequency synthesizers, a fast-lock technique is frequently employed to overcome the trade-off between a lock-time and a spurious response. The function of fast-lock in a conventional PLL (Phased Lock Loop) IC (Integrated Circuit) is limited by a factor of 16, which is usually implemented by a scaling of charge pumper, and consequently a lock time improvement of a factor of 4 is possible using the conventional PLL IC. In this paper, we propose a novel external active fast-lock loop filter. The proposed loop filter provides, conceptually, an unlimited scaling of charge pumper current, and can overcome conventional trade-off between lock-time and spur suppression. To demonstrate the validity of our proposed loop-filter, we fabricated an X-band frequency synthesizer using the proposed loop filter. The loop filter in the synthesizer is designed to have a loop bandwidth of 100 kHz in the fast-lock mode and a loop bandwidth of 5 kHz in the normal mode, which corresponds to a charge pumper current change ratio of 400. The X-band synthesizer shows successful performance of a lock-time of below 10 ${\mu}sec$ and reference spur suppression below -64 dBc.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.370-374
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• 1996

A Superstructure Grating(SSG) Distributed-Bragg-Reflector(DBR) laser has a broad tuning range with a good mode suppression ratio. However, gaps of channel are observed in the wavelength-tuning characteristics of an SSGDBR laser which employs linearly-chirped DBR mirrors. We found by numerical simulation that the gaps may be attributed to the nonuniform reflection-peak heights of a linearly-chirped DBR mirrors. We propose a nonlinearly chirped grating DBR mirror structure that makes reflection-peak heights almost uniform. Therefore a nonlinearly chirped grating structure can be employed in an extended tuning range semiconductor laser to achieve gap-free tuning and low threshold current operation simultaneously.

• ETRI Journal
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• v.35 no.5
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• pp.827-837
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• 2013

In this paper, we present wideband common-mode (CM) noise suppression using a vertical stepped impedance electromagnetic bandgap (VSI-EBG) structure for high-speed differential signals in multilayer printed circuit boards. This technique is an original design that enables us to apply the VSI-EBG structure to differential signals without sacrificing the differential characteristics. In addition, the analytical dispersion equations for the bandgap prediction of the CM propagation in the VSIEBG structure are extracted, and the closed-form expressions for the bandgap cutoff frequencies are derived. Based on the dispersion equations, the effects of the impedance ratio, the EBG patch length, and via inductances on the bandgap of the VSI-EBG structure for differential signals are thoroughly examined. The proposed dispersion equations are verified through agreement with the full-wave simulation results. It is experimentally demonstrated that the proposed VSI-EBG structure for differential signaling suppresses the CM noise in the wideband frequency range without degrading the differential characteristics.

• ETRI Journal
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• v.28 no.4
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• pp.533-536
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• 2006

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

• Korean Journal of Optics and Photonics
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• v.22 no.4
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• pp.179-183
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• 2011

An external cavity laser operating at near infrared wavelength is demonstrated by incorporating polymer waveguide Bragg reflectors. 3rd order Bragg grating and oversized rip waveguide structure were designed by using the effective index method and the transmission matrix method. The polymer waveguide was fabricated using polymer materials with refractive indices of 1.462 and 1.435 for the core and the cladding layers, respectively. The external feedback laser with 875-nm Bragg grating exhibits single mode lasing located at 850-nm wavelength with an output power of 0 dBm, a 20-dB bandwidth of 0.2 nm and a side mode suppression ratio of 40 dB.

• Journal of the Korean Society of Radiology
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• v.12 no.2
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• pp.123-131
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• 2018

This study compared PENELOPE with measured values from low energy peak to high energy peak to reduce peak to compton ratio and continuum background spectrum using $^{60}Co$, $^{137}Cs$ and mixed volume source. In addition, the change in backscattering and compton edge efficiency was compared with that of PENELOPE through changes in the vicinity of low energy. The results from the mixed volume source are applied to the soil samples to determine how much the minimum detection limits of the soil samples are reduced in the suppression and unsuppressed mode. The compton suppression of the low energy region of $^{60}CO$ (1,173 keV) was considerable, and the Compton edge RF for the $^{137}Cs$ (661 keV) peak was 2.8. In particular, the $^{60}Co$ source emits coincidence gamma rays of 1,173.2 keV and 1,332.5 keV, so compton inhibition was reduced by approximately 21%. RF of compton edges of 1,173 keV and 1,332 keV emitted from a $^{60}Co$ source was 3.2 and 3.4, and the peak to compton edge ratio was improved to 8: 1. And Compared with Penelope, the uncertainty was well within 2%. In compton unsuppressed mode, MDA values of 661 keV, 1,173 keV and 1,332 keV were 0.535, 0.173 and 0.136 Bq/kg, respectively, but decreased in compton suppressed mode to 0.121, 0.00826 and 0.00728 Bq/kg. Thus, Compton suppressed could reduce the background radioactivity and the radioactivity contained in the detector itself.

• ETRI Journal
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• v.33 no.5
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• pp.810-813
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• 2011

We report the use of a widely tunable detuned dual-mode laser diode (DML) as a compact and portable continuous-wave THz emitter. The wavelength difference between the two lasing modes of this DML can be tuned from 2.4 nm to 9.3 nm by using integrated microheaters. The power difference between these modes is less than 1 dB, and the side-mode suppression ratio is greater than 30 dB over the entire tuning range.

• Journal of the Optical Society of Korea
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• v.14 no.1
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• pp.38-41
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• 2010

We design and fabricate a widely tunable laser diode made of InGaAsP-InP. The diode is monolithically integrated with a wavelength-selective coupled-ring reflector and semiconductor amplifiers. For realization of a compact size device, deeply etched multi-mode interference couplers and square ring resonators composed of total-internal-reflection mirrors are adopted and fabricated using a self-aligned process. It is demonstrated that the laser diode exhibits single mode operation and 16 nm tuning range with side-mode-suppression-ratio exceeding 20 dB.