• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.48 no.12
• /
• pp.9-16
• /
• 2011

Most of the current mobility management protocols such as MIPv4/6 and its variants standardized by the IETF do not support global seamless handover. This is because they require comprehensive changes of the existing network infrastructure. In this article, we propose a simple mobility management protocol (SMMP) which can support global seamless handover between homogeneous or heterogeneous wireless networks. The idea is that the SMMP employs separate location management function as done in SIP to support global user and service mobility. In addition, the bidirectional tunnels are dynamically constructed to support seamless IP mobility by extending the IEEE 802.21 MIH standards. The detailed architecture and functions of the SMMP have been designed. Finally, the simulation results, using NS-2, show that the proposed SMMP outperforms the existing MIPv6 and HMIPv6 in terms of handover latency, packet loss, pear signal noise ratio (PSNR).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.341.1-341.1
• /
• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.4
• /
• pp.161-168
• /
• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.6
• /
• pp.350-355
• /
• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.10
• /
• pp.76-82
• /
• 2007

Recently, researches related MANET are progressing dynamically in points of view which MANET need no additional infra and guarantee node mobility. Node mobility in MANET is becoming more important, as people interest in using Ad hoc network under a concept of node mobility as fast automobile not walking. when nodes move fast, there are many problems headed by high cost for searching destination and routing. To deal with this problems We propose new routing protocol, No path-Location Aided Routing (N-LAR). Our algorithm has a better performance in terms of end-to-end delay, packet delivery ratio in MANET with High mobility.

• Journal of Korea Society of Industrial Information Systems
• /
• v.18 no.1
• /
• pp.1-9
• /
• 2013

Most calls of a called user are invoked by the group of calling users. This call pattern is defined as call locality. Similarly Internet sessions including IP telephony calls have this pattern. We define it session locality. In this paper, we propose a caching scheme to support session locality in hierarchical SIP networks. The proposed scheme can be applied easily by adding only one filed to cache to a data structure of the SIP mobility agent. And this scheme can reduce signaling cost, database access cost and session setup delay to locate a called user. Moreover, it distributes the load on the home registrar to the SIP mobility agents. Our performance evaluation shows the proposed caching scheme outperforms the hierarchical SIP scheme when session to mobility ratio is high.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.407-410
• /
• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• Journal of KIISE
• /
• v.42 no.3
• /
• pp.408-412
• /
• 2015

In base station based networks, traffic overload at the base station is inevitable. Peer-to-peer DTN which disperses the traffic overhead to each node can relieve the traffic overload at the base station. To increase the message delivery ratio and reduce the message overhead, we present novel routing using mobility information which can be obtained from each node, unlike the existing flooding based routings. In the proposed routing scheme, the routing decision metric, which is defined based on the node mobility information, is computed by using the expected distance between each node to the destination. The message is copied to other nodes that have lower expected distance to the destination than the value for the node willing to copy the message. We conducted simulations by using both a random mobility model and a real mobility trace to compare the performance of the proposed routing scheme to the existing routing scheme that does not utilize the mobility information. The performance evaluation showed the proposed routing successfully delivers messages with 10% to 30% less copies compared to previously proposed routing schemes.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.12 no.6
• /
• pp.1-16
• /
• 2012

In this paper, we propose a cost-effective location and service management scheme in LTE (Long Term Evolution) networks, which a per-user service proxy is created to serve as a gateway between the mobile user and all client-server applications engaged by the mobile user. The service proxy is always co-located with the mobile user's location database such that whenever the MU's location database moves during a location hand-off, a service hand-off also ensues to co-locate the service proxy with the location database. This allows the proxy to know the location of the mobile user all the time to reduce the network communication cost for service delivery. We analyze four integrated location and service management schemes. Our results show that the centralized scheme performs the best when the mobile user's SMR (service to mobility ratio) is low and ${\upsilon}$(session to mobility ratio) is high, while the fully distributed scheme performs the best when both SMR and ${\upsilon}$ are high. In all other conditions, the dynamic anchor scheme is the best except when the service context transfer cost is high under which the static anchor scheme performs the best. Through analytical results, we demonstrate that different users with vastly different mobility and service patterns should adopt different integrated location and service management methods to optimize system performance.

• Transactions of the Korean hydrogen and new energy society
• /
• v.33 no.6
• /
• pp.786-794
• /
• 2022

Green ammonia is a promising renewable energy carrier. Green ammonia can be used in various energy conversion devices (e.g., engine, fuel cell, etc.). Ammonia has to be fed with hydrogen for start-up and failure protection of some energy conversion devices. Ammonia can be converted into hydrogen by decomposition and partial oxidation. Especially, partial oxidation has the advantages of fast start-up, thermally self-sustaining operation and compact size. In this paper, thermodynamics, start-up and operation characteristics of ammonia partial oxidation were investigated. O₂/NH₃ ratio, ammonia flow rate and catalyst volume were varied as operation parameters. In thermodynamic analysis, ammonia conversion was maximized in the O₂/NH₃ range from 0.10 to 0.15. Ammonia partial oxidation reactor was successfully started using 12 V glow plug. At 0.13 of O₂/HN₃ ratio and 10 LPM of ammonia flow rate, ammonia partial oxidation reactor showed 90% of ammonia conversion over commercial Ru catalyst. In addition, Increasing O₂/NH₃ ratio from 0.10 to 0.13 was more effective for high ammonia conversion than increasing catalyst volume at 0.10 of O₂/NH₃.