• 한국재료학회지
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• 제26권1호
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• pp.42-46
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• 2016

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• ETRI Journal
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• 제11권2호
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.17-20
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• 2018

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2014년도 추계학술대회
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• pp.899-901
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• 2014

본 논문은 청소용 로봇의 전방향 주행이 가능하도록 하기위한 새로운 구동장치를 제안하였다. 제안된 구조는 2차 평면에서 3자유도 모션제어가 가능하고 잉여도를 갖지 않는 세게의 상호작용 엑츄에이터로 구성하였다. 또한, 로봇의 운동메카니즘을 해석하기 위하여 전방위 구동장치의 기구학을 해석하였으며 구동 메카니즘을 제안하였다.

• Bulletin of the Korean Chemical Society
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• 제19권2호
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• pp.178-183
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• 1998

Carbon-13 CP-MAS NMR techniques were used to investigate dynamics of new combined type liquid crystalline polymers, poly[oxy-1,4-phenyleneoxy-2-{6-(4-(4-butylphenylazo)phenoxy)hexyloxy}terephthaloyl] and poly[oxy-1,4-phenyleneoxy-2-{10-(4-(4-butylphenylazo)phenoxy)decyloxy}terephthaloyl]. Noticeable mobility change of either aromatic groups or methylene groups is not detected between 25 ℃ and 82 ℃ from 13C spinlattice relaxation time in the rotating frame (T1ρ(C)) and contact time array experiments. However, line shape analysis shows the increase of mobility of methylene carbons in poly[oxy-1,4-phenyleneoxy-2-{6-(4-(4-butylphenylazo)phenoxy)hexyloxy}terephthaloyl] at higher temperature. The dynamics of side chanis does not seem to be affected in our experimental temperature range by the length of aliphatic chain which is connecting the side chain group to the main chain.

• 한국산업융합학회 논문집
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• 제25권3호
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• pp.341-347
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• 2022

This paper presents a comparison result of two simultaneous localization and mapping (SLAM) algorithms for navigation that have been proposed in literature. The performances of Extended Kalman Filter (EKF) SLAM under Gaussian condition, FastSLAM algorithms using Rao-Blackwellised method for particle filtering are compared in terms of accuracy of state estimations for localization of a robot and mapping of its environment. The algorithms were run using the same type of robot on indoor environment. The results show that the Particle filter based FastSLAM has the better performance in terms of accuracy of localization and mapping. The experimental results are discussed and compared.

• International Journal of Aerospace System Engineering
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• 제10권1호
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• pp.14-24
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• 2023

The materials applied to the aircraft fuselage, parts, and components must be verified by relative authorities in accordance with the procedures set by the airworthiness authority to achieve the aircraft type certification. There are no examples of domestic composite materials which were verified in order to be applied to aircraft structure. In this study, the composite material certification system of NCAMP, an American composite material standard certification organization, was reviewed and used as the fundamentals of the first aerospace composite material certification system in ROK(Fig 2,8). Also updated material certification documents were developed and confirmed by material certification engineers and inspectors. This aerospace composite material qualification system is intended to modernize the material certification system for AAM(Advanced Air Mobility) as well as aircraft and to enhance the understanding of related technicians and inspectors.