• Korean Journal of Food Science and Technology
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• v.20 no.5
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• pp.625-630
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• 1988

Phosphorylation of soy protein by sodium trimetaphosphate and acetylation of soy protein by acetic anhydride were performed. Then, the functional properties of modified soy proteins were compared with that of unmodified soy protein. Isolated soy protein prepared from defatted soybean flake had protein content of 92.7% as moisture-free basis. The phosphorylated soy protein showed higher solubility, foaming properties, and water holding capacity than unmodified soy protein. Acetylation of soy protein increased emulsification activity and foaming properties greatly, whereas decreased the solubility at pH 8.0. Isoelectric pHs of phosphorylated and acetylated soy protein were shifted to acidic regions(pH 3.0 and pH 4.0) from pH 5.0, which was the isoelectric pH of unmodified soy protein. Soy protein seems to be aggregated during phosphorylation and acetylation procedure, judging form Sepharose CL-4B gel filtration profiles. The modified soy proteins showed increased mobilities to anode direction in disc-gel electrophoresis.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.1
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• pp.75-82
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• 2004

The photoluminescence and electroluminescence of poly(9-vinylcarbazole) (PVCz) containing different ratio 1.3,5-dimethly-3,5-di-tert-butyl-4,4-diphenoquinone (MBDQ), 1.3,5-diemthyl-3.5-di-tert-butyl-4,4-stylbenquinone (MBSQ) were characterized. As the contents of DQ and SQ increased, the intensity of peaks at 516 and 540nm increased in PL spectra. The results of TOF measurement were shown that the hole mobility of PVCz decreased as the ratio of DQ or SQ increased. On the other hand, the electron mobility of PVCz increased. Therefore Electron transport is more favorable than hole transport in these charge transfer complexes, due to the stronger localization of the holes. Evidence for better electron transport is the higher mobility of electrons in pure DQ or SQ compared to hole mobility in pure PVCz, and lower DQ or SQ concentration required for equivalent mobilities in the charge-transfer complexes.

• The Journal of the Korea Contents Association
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• v.9 no.1
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• pp.30-44
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• 2009

In this paper, we propose the mobile P2P structure supporting content searches for mobile peers efficiently. The proposed mobile P2P structure is a 3-tier structure which consists of a mobile peer, a mobile super peer, and a stationary super peer to reduce the content search cost of mobile P2P service. For content searches, mobile peer searches content in the communication range and performs hierarchical content searches which is using mobile super peer, stationary super peer for expansion of query region. In order to support hierarchial content searches and the continuity of services according to peer mobilities, peer's join/leave processes are explicitly stored by supporting message structures to the upper layer It is shown through experimental evaluation that the proposed structure improves about 32% contents search performance over the existing 2-tier structure. Since it also reduces the messages transferred to the stationary super peers, it reduced about 25% search loads of them.

• Journal of KIISE:Information Networking
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• v.37 no.4
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• pp.284-293
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• 2010

For the successful deployment of Mobile Internet, fast handover technologies are essential. For the past few years several handover mechanisms are suggested, and Fast Handover for Proxy Mobile IPv6 (PFMIPv6) is one of the promising schemes for this purpose. In this paper, we propose a novel L2/L3 cross layer handover scheme based on ARIMA prediction model to apply PFMIPv6 to Mobile Internet environment effectively. Performance gains are evaluated in terms of probabilities of predictive-mode operation, handover latencies, packet loss probabilities, and signaling costs. Three mobilities models are used for our simulation: Manhattan Model, Open Area Model, and Freeway Model. Simulation results show that the proposed scheme can increase probabilities of predictive-mode operation and reduce handover latency, packet loss probabilities, and signaling cost.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.5 no.4
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• pp.105-107
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• 1972

The effects of copper and salt on the hemoglobin patterns of Carassius carassius, Ophicephalus argus, and Misgurnus anguillicaudatus were investigated by vertical starch gel electrophoresis. The number of the hemoglobin band of normal C. cararsius on the anode was one, and that of O. argus was two; neither the number of the homoglobin bands of the fishes nor the mobility of them was affected by copper or salt. The hemoglobin mobility of O. argus was faster than those of C. carassius and M. anguillicaudatus. Normal M. anguillicaudatus had two hemoglobin bands with nearly identical mobilities, one band migrating anodically and the other cathodically. When M. anguillicaudatus was exposed to copper, the mobility of band on the anode was faster than those of the other groups of control and exposed to salt, whereas the hemoglobin band on the cathode was not affected.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.847-853
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• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.23-26
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• 2012

In MANET, the nodes, configuring a path, act as routers and they have various mobilities. If the path is broken by a node's moving, a new path has to be found again. For this reason, the node with high mobility should be excluded from configuring a path as far as possible. In this paper, we propose an algorithm which excludes nodes with high mobility from constructing a path by collecting and managing the information of mobility. As the result, the proposed algorithm provides more stable paths. In this algorithm, we appends MRecord Field and Relieve Field in the routing table to collect and manage the mobility information by extending current AOMDV. In addition, we add Mbl Field to RREP (Route Reply) message to adapt the collected information to configure the real path.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.12A
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• pp.2002-2007
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• 1999

In this paper, the n-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) on glass were investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. It is done to decide to be applied on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 2, 10, 25$\mu\textrm{m}$ of channel length, the field effect mobilities are 111, 126 and 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus, the poly-Si TFT’s used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate display panel and peripheral circuit on a large glass substrate.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1045-1049
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• 1995

Thin films of Indium tin oxie (ITO) were prepared by the process of metal organic decomposition. Light transmittance and electrical transport properties of the films were studied with varying the firing temperature and SnO$_2$content. XRD study showed that tin substituted indium in the In$_2$O$_3$lattice. The resistivity had the minimum value of 2.5 ${\times}$ 10$\^$-3/$\Omega$-cm when the content of SnO$_2$was 9wt.%. This value was higher by a factor of 10 than the previously reported results. This difference was attributed to the low mobilities presumably caused by the fine grain size. The transmittance of ITO films in the visible range was over 90%, and the optical energy gap calculated from the absorption edge was in the range of 4.51 and 4.96eV.