• BMB Reports
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• 제28권4호
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• pp.281-289
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• 1995

Homogeneous human deoxycytidine kinase was purified in one step from a variety of spontaneous human leukemic cells (T-ALL, B-ALL, B-CLL, AML, CML), and from cultured T-lymphoblast cells (MOLT-4) using the newly developed affinity medium, $dCp_4$-Sepharose. Starting with an ammonium sulfate fraction, purification was achieved in one step with the kinase being eluted from a column by the end product inhibitor, dCTP. The purified deoxycytidine kinase from T-ALL cells phosphorylated deoxyadenosine and deoxyguanosine, as well as deoxycytidine. The enzyme purified from T-ALL and B-CLL cells yielded one major band with a molecular weight of 52 kDa determined by SDS-polyacrylamide gel electrophoresis. AML and CML cells yielded one 52 kDa band and an extra band of 30 kDa molecular weight. On the other hand, B-ALL and MOLT-4 cells showed a low molecular weight band of 30 kDa only. However, the electrophoretic mobilities of enzymatic activity in 12% non-denaturing gels were identical for the dCyd kinase from all different kinds of leukemic cell lines, except that the B-ALL, B-CLL, and MOLT-4 cell preparations had an extra minor peak, all at the same position. dAdo and dCyd phosphorylating activities comigrated indicating that these activities are all associated with the same protein. Two new methods, a disk implantation method and a nitrocellulose powder method were used with a small amount of enzyme protein to raise polyclonal antibodies against dCyd kinase purified from T-ALL cells.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제7권2호
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• pp.308-326
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• 2013

Mobility Model has drawn more and more attentions since its critical role in Mobile Wireless Networks performance evaluation. This paper analyzes the mobility patterns in the catastrophe rescue scenario, and proposes the Random Waypoint with Base Point mobility model to model these characteristics. We mathematically analyze the speed and spatial stationary distributions of the nodes and derive explicit expressions for the one dimensional case. In order to keep the stationary distribution through the entire simulation procedure, we provide strategies to initialize the speed, location and destination of the nodes at the beginning of the simulation. The simulation results verify the derivations and the proposed methods in this paper. This work gives a deep understanding of the properties of the Random Waypoint with Base Point mobility model and such understanding is necessary to avoid misinterpretation of the simulation results. The conclusions are of practical value for performance analysis of mobile wireless networks, especially for the catastrophe rescue scenario.

• 소음진동
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• 제8권6호
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• pp.1137-1143
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• 1998

This paper describes the method to measure of the vibrational power transmitted from the vibration source to the supporting structure in the horizontal direction. Generally, it is impossible to measure horizontal forces at the coupling points. However. the vibrational Power transmitted in the horizontal direction can be measured by using indirect method that is based on the mechanical impedance and velocities at the coupling points. We proposed the method to estimate the vibrational power when the vibration source and supporting structure cannot be separated. In this paper. the vibrational power transmitted in the horizontal direction is also estimated by using this method. The estimated and measured results of the mobilities at the coupling point and vibrational power in the horizontal direction are compared. It is shown that the estimated results agree well with the measured results. For the supporting structure with multiple coupling points, the other coupling points should be considered for measuring the vibrational power transmitted through one coupling points. We examine the effects of other coupling points and measure the vibrational power without considering the other coupling points.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.82-85
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• 2008

Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.918-921
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• 1992

A basic study on the discharge phenomenum of rod-to-rod microgap in the deionized water has been investigated with emphasis on the microgap spacing. The I-V charateristics for the case of ac and dc applied voltages had 3 different regions, a low conduction ohmic region, a medium conduction corona discharge region, and a high conduction arc discharge region. The corona discharge in the deionized water for the case of ac and de applied voltages had no different from the those in the air. But the arc discharge in the water occurred pulsative with sound which, however it is not clear, would be encounted due to the influences from the low temperature of the ambient water, vast of electrolytic generated electronegative gases(e.g. $O_2$, OH, O) and water molecules($H_2O$), and the space charge effects near the rod in the microgap from the ions of $H^+$, $OH^-$, $O_2^-$, etc, whose mobilities in the water are originally very low.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.497-497
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• 2013

Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

• Advances in environmental research
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• 제6권4호
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• pp.281-299
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• 2017

Single (0.005 M DTPA), sequential (six-step) and kinetic (0.05 M EDTA) extractions were performed to assess Cd, Cr, Cu, Ni, Pb, and Zn mobilization and their potential ecological risks in Abuja (Nigeria) water (WTS) and wastewater (WWTS) treatment sludges. Total metal levels (mg/kg) in WTS and WWTS, respectively were: Cd(3.67 and 5.03), Cr(5.70 and 9.03), Cu(183.59 and 231.53), Ni(1.33 and 3.23), Pb(13.43 and 17.87), Zn(243.45 and 421.29). DTPA furnished metal extraction yields (%) in WTS and WWTS, respectively as: Cd(11 and 6), Cr (15 and 7), Cu(17 and 13), Ni(23 and 3), Pb(11 and 12), and Zn(37 and 33). The metals were associated with the soluble/exchangeable, carbonate, Mn/Fe-oxide, organic matter and residual forms to varying degrees. Kinetic extractions cumulatively leached metal concentrations akin to the mobilizable fractions extracted sequentially and the leaching data fitted well into the Elovich model. Metal mobilities were concordant for the three leaching procedures and varied in the order:WTS>WWTS. Calculated ecological risk indices suggested moderate and considerable metal toxicity in WTS and WWTS, respectively with Cd as the worst culprit. The findings may be useful in predicting heavy metals bioavailability and risks in the sludges to guide their disposal and use in land applications.

• 한국안전학회지
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• 제31권4호
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• pp.15-21
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• 2016

The elevator is an essential part of the transportation means in modern society. It has become the convenient movement means of vertical and horizontal mobilities for vulnerable citizens including the disabled or elderly in skyscrapers and the multi-purposes facilities. After the 1990s, the number of newly installed elevators have increased because of the establishment of large scale public houses which need an increase of means of transportation. Thus, the safety accident in the elevator has been currently in an increasing trend as years passed by because that the elevator is always exposed to the risk of accident. Most of the elevator accidents occur in the escalator and moving walkway. This study investigated the current usage situations of users at multi-purpose shopping spaces, the sub way, and the airport about the escalator including moving walkway. Moreover the accident types were analyzed for the escalator based on 10 years of statistics. And the methods for the accident prevention were proposed on the equipment, management and user side.

• 한국재료학회지
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• 제16권5호
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• pp.292-296
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• 2006

Effects of rapid thermal annealing of bismuth telluride thin films on their thermoelectric properties were investigated. Films with four different compositions were elaborated by co-sputtering of Bi and Te targets. Rapid thermal treatments in range of $300{\sim}400^{\circ}C$ were carried out during 10 minutes under the reducing atmosphere (Ar with 10% $H_2$). As the temperature of thermal treatment increased, carrier concentrations of films decreased while their mobilities increased. These changes were clearly observed for the films close to the stoichiometric composition. Rapid thermal treatment was found to be effective in improving the thermoelectric properties of $Bi_2Te_3$ films. Recrystallization of $Bi_2Te_3$ phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration. Maximum values of Seebeck coefficient and power factor were obtained for the films treated at $400^{\circ}C$ (about $-128{\mu}V/K$ and $9{\times}10^{-4}\;W/K^2m$, respectively). With further higher temperature ($500^{\circ}C$), thermoelectric properties deteriorated due to the evaporation of Te element and subsequent disruption of film's structure.