• Title/Summary/Keyword: Moat

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One-cyclic Volcanic Processes at Udo Crater, Korea (우도(牛島) 분화구(噴火口)에서의 일윤회(一輪廻) 화산과정(火山過程))

  • Hwang, Sang Koo
    • Economic and Environmental Geology
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    • v.26 no.1
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    • pp.55-65
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    • 1993
  • Udo Island, some 3 km off the coast of Sungsan Peninsula at the eastern promontory of Cheju Island, occurs in such a regular pattern on the sequences which reprent an excellent example of an eruptive cycle. The island comprises a horseshoe-shaped tuff cone, a nested cinder cone on the crater floor, and a lava delta which extends over northwest from the moat between two cones. The volcanic sequences suggest volcanic processes that start with emergent Surtseyan eruption, progress through Strombolian eruption and end with lava effusion followed by reworking of smooth tephra on the tuff cone. Eruptive environment and hydrology of vent area in the Udo tuff cone are poorly constrained because the stratigraphic units under the tuff cone are unknown. It is thoughl, however, that the tuff cone could be mainly emergent because the present cone deposits show no evidence of marine reworking, and standing body of sea water could play a great role. The emergent volcano is characterized by distinctive steam-explosivity that results primarily from a bulk interaction between rapidly ascending magma and a highly mobile slurry. The sea water gets into the vent by flooding accross or through the top or breach of tephra cone. Udo tuff cone was constructed from Surtseyan eruption which went into with tephra finger jetting activities in the early stage, late interspersed with continuous uprush activities and proceeded to only continuous uprush activities in the last. When the enclosure of the vent by a long-lived tephra barrier would prevent the flooding and thus allow the vent to dry out, the Surtseyan eruption ceased to transmit into Strombolian activities, which constructed a cinder cone on the crater floor of the tuff cone. The Strombolian eruption ceased when magma in the conduit gradually became depleted in gas. In the case of Udo, the last magmatic activity was Hawaiian-type (and/or fountain) which accumulated basalt lava delta. And then the loose tephra of the tuff cone reworked over the moat lava and the northeastern flank.

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Property variation of transistor in Gate Etch Process versus topology of STI CMP (STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화)

  • 김상용;정헌상;박민우;김창일;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.181-184
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    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

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Evaluation of Heating and Buckling Effects on Inelastic Displacement Responses of Lead-Rubber Bearing Subject to Strong Ground Motions (강진 시 납-고무 면진장치의 비탄성 변위응답에 대한 온도상승 및 좌굴효과의 분석)

  • Yun, Su-Jeong;Hong, Ji-Yeong;Moon, Jiho;Song, Jong-Keol
    • Journal of the Earthquake Engineering Society of Korea
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    • v.23 no.6
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    • pp.289-299
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    • 2019
  • The tendency to use a probabilistic design method rather than a deterministic design method for the design of nuclear power plants (NPPs) will increase because their safety should be considered and strictly controlled in relation to various causes of damage. The distance between a seismically isolated NPP structure and a moat wall is called the clearance to stop. The clearance to stop is obtained from the 90th percentile displacement response of a seismically isolated NPP subject to a beyond design basis earthquake (BDBE) in the probabilistic design method. The purpose of this study is to analyze the effects of heating and buckling effects on the 90th percentile displacement response of a lead-rubber bearing (LRB) subject to a BDBE. The analysis results show that considering the heating and buckling effects to estimate the clearance to stop is conservative in the evaluation of the 90th percentile displacement response. If these two effects are not taken into account in the calculation of the clearance to stop, the underestimation of the clearance to stop causes unexpected damage because of an increase in the collision probability between the moat wall and the seismically isolated NPP.

Some Problems in the Evaluation of the Transportation Plan (교통계획평가에서의 제문제)

  • 최창의
    • Journal of Korean Society of Transportation
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    • v.5 no.2
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    • pp.37-54
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    • 1987
  • The methods of the transportation plan evaluation have appearently been improved. Yet we are frequently confronted with many problems when we are trying to apply those various methods in practice. This paper aims at reviewing the major problems in the transportation plan evaluation and considering the way to resolve such kinds of problem. The selection of the evaluation criteria and the weighting systems between such criteria are the moat important things in the multi-criteria approaches. In this respect, this paper suggests some alternative evaluation criteria in consideration of the levels and the purpose of the plan. Also the increased capacities and new demands of generated trip are the main effects of the transportation investment. Nevertheless such significant effects have been neglected in the calculation of benefits due to the transportation investment in the past. Therefore this paper suggests that the surplus capacities and new demands of generated trip according to the alternative investment plans should be included in the calculation of benefits for the plan evaluation.

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A Study on the Representation of Voltage Unbalance: Part I-Voltage Unbalance Factor in terms of Line Voltage Magnitudes (전압불평형의 표현방식에 관한 연구(I) - 선간전압 크기에 의한 불평형계수의 표현 -)

  • 정승기
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.52 no.5
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    • pp.257-262
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    • 2003
  • The voltage unbalance factor derived from symmetrical component analysis requires manipulation of complex quantities. To facilitate the calculation of the voltage unbalance factor in field applications, this paper proposes the method for calculating the voltage unbalance factor in terms of the line voltage magnitudes that are readily available in moat practical circumstances. It is shown that the line voltages appear as circular Phasor loci for given voltage unbalance factor, and a graphical chart is developed that can be used to determine the voltage unbalance factor in a straightforward manner avoiding calculation.

A Study on the Pattern Making of Men's Formal Jacket (남성 정장 상의원형 설계에 관한 연구)

  • 유경진;이정란
    • Journal of the Korean Society of Clothing and Textiles
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    • v.26 no.1
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    • pp.62-73
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    • 2002
  • The purpose of this study was to develop men's formal jacket pattern for the Korean males of age 25 to 34 age with an average physique. Through the survey on seven industries of the ready-made men's wear, we investigated size systems and jacket patters presently practiced. From the fitting test of four patterns (three for ready-made jacket patterns, one for educational pattern) the moat favorable and comfortable pattern was selected. New experimented jacket pattern was based on it. The findings were as followed. 1) Survey of the domestic ready-made garment industries showed that each company classified its own manufactured goods according to its own size systems. 2) Anthropometric measurments of forty males for the subjects of lilting test were agreed to the survey of National Anthropometric of Korean(1997). These were also compatible to the standard size (100-88-175) of investigated industries. 3) Experimental jacket pattern was completed through the three times rectification and it gained higher ratings.

Simulation of Multiversion Real-time Transactions in Database Systems for Factory Automation (공장 자동화를 위한 데이터베이스 시스템에서의 다중 버전 실시간 트랜잭션의 시뮬레이션)

  • 유인관
    • Journal of the Korea Society for Simulation
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    • v.3 no.1
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    • pp.125-134
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    • 1994
  • In real-time database systems, transactions's commitment done before the given deadlines is more important than just getting the maximum throughput. Transactions missing the given deadlines are no longer meaningful in real-time applications. Therefore, there is a need for new transaction processing models to meet the given deadlines in real-time database applications, because moat conventional transaction models are not designed to meet deadlines. In this paper we propose a new transaction models which uses multiple versions of a data item. The model uses read-from graphs and dynamic reorder of transactions to meet deadlines. A read-from graph contains the past read semantics of read operations and support the model to decide which database operation to be taken. Then, we show simulation results comparing the proposed model with other transaction models such as two phase locking model and the optimistic concurrency control model.

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Pharmaceutical Studies on Esterification of Chloramphenicol with Antipyretics ( II ) (Chloramphenicol과 해열제(解熱劑)와의 Ester 화합물(化合物)에 관(關)한 약제학적(藥劑學的) 연구(硏究) ( II ))

  • Kim, Jung-Woo;Kim, Jong-Kap
    • Journal of Pharmaceutical Investigation
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    • v.14 no.2
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    • pp.76-85
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    • 1984
  • Antibiotic activity and antipyretic effect of three synthetic prodrugs, chloramphenicol acetylsalicylate (CAF-ASP), chloramphenicol naproxenate(CAF-NAX) and chloramphenicol acetaminophen succinate (CAF-SUC-ACET), were studied in vitro and in vivo. In the experimental results, the CAF-NAX showed the moat rapid absorption and the highest blood levels, and the CAF-SUC-ACET and CAF-ASP also were more rapid absorption and higher blood levels than controls, chloramphenicol and chloramphenicol palmitate. The synthetic prodrugs also showed the antipyretic effect by modified Roszkowski method using endotoxin.

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Study on the Interface State Density of MNS Diode by the Conductance Method. (Conductance 법에 의한 MNS Diode 의 계면상태에 관한 고찰)

  • Sung, Yung-Kwon;Choi, Jong-Il;Lee, Nae-In
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.346-349
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    • 1988
  • Conductance technique is the moat accurate method and gives more detailed information about interface of the MIS structure than other methods. With the measurement of the equivalent parallel conductance and capacitance, the characterization of Si-SiN interface is developed. The interface state density of Si-SiN is obtained by $8{\times}10^{11}$ - $6{\times}10^{12}(eV^{-1}cm^{-2}$). After the positive B-T stress is performed on the sample, the interface state density gets increased. The interface state density is not effected by the D.C. stress.

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Reproducible Chemical Mechanical Polishing Characteristics of Shallow Trench Isolation Structure using High Selectivity Slurry

  • Jeong, So-Young;Seo, Yong-Jin;Kim, Sang-Yong
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.4
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    • pp.5-9
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    • 2002
  • Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.