• Current Photovoltaic Research
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• v.5 no.4
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.807-811
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• 2002

In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.49-51
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• 1989

The effect of Mo elenent and annealing condition on the magnetic properties were investigated in Fe$_{80}$B$_{12}$Si$_{8}$ amorphous alloy. With increasing Mo contents, soft magnetic properties were improved by decreasing coercive force and increasing maximum permeability. These improvements were attributed to the decreasing of magnetostriction by Mo addition. The annealing treatment also improved the soft magnetic properties of (Fe$_{1-x}$ Mo$_{x}$)$_{80}$ B$_{12}$ Si$_{8}$ amorphous alloys. It could be thought that these improvements were ascribed to the relaxation of internal stress.nal stress.ess.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.669-680
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• 1994

Oxidation behaviour of TiAl intermetallic compounds with the addition of Cr, V, Si, Mo, or Nb was investigated at 900~$1100^{\circ}C$ under the atmospheric environment. The reaction products were examined by XRD, SEM equipped with WDX. The weight gain by continuous oxidation increased with the addition of Cr or V, but there was less weight gain when Mo, Si or Nb was added individually. he oxidation rate of Cr- or V-added TiAl was always larger than that of TiAI. However, oxidation rate of Si-, Mo- or Nb-added TiAl was almost same or smaller than that of TiAI. Thus, it is concluded that the addition of Cr or V did not improve the oxidation resistance, whereas the addition of Si, Mo or Nb improved the oxidation resistance. Oxides formed on TiAl with Mo, Si, and Nb were found to be more protective, resulting from the decrease in diffusion rate of the alloying elements and oxygen. Nb strengthened the tendency to form $AI_{2}O_{3}$ in the early stage of oxidation, due to the continuous $AI_{2}O_{3}$ layer formation and dense $Tio_{2}+AI_{2}O_{3}$ layer. According to the Pt-marker test of TiAI- 5wt%Nb, oxygen diffused mainly inward while oxides were formed on the substrate surface. Upon thermal cyclic oxidation at $900^{\circ}C$, it is shown that the addition of Cr or Nb improved the adherence of oxide scale to the substrate.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.70.2-70.2
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.64-65
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.195.1-195.1
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• 2014

최근 반자성 물질인 $MoS_2$를 수소 기체 속에서 열처리하게 되면 약한 강자성이 유발된다는 연구가 보고되었다. 본 연구에서는 강자성 발현을 수반하는 물리적 및 화학적 변화를 이해하기 위해서 단일층 $MoS_2$에 대한 라만분광 및 광발광 연구를 수행하였다. 기계적 박리법을 이용하여 $MoS_2$ 결정으로부터 단일층 및 이중층 $MoS_2$를 분리하여 $SiO_2/Si$ 기판에 전사한 후, $200^{\circ}C{\sim}500^{\circ}C$ 영역의 특정 온도에서 1시간 동안 열처리하였다. 배경 기체가 열처리 도중 $MoS_2$에 미치는 영향을 이해하기 위하여 수소 속 반응을 진공 상태와 비교하였다. 라만 스펙트럼에서는 큰 변화가 없었으나, 광발광의 세기는 수소 속 반응 후에 감소하고 진공 속 반응 후에는 증가하는 대조적인 결과를 보였다. AFM 측정으로부터는 열처리 후에 $MoS_2$ 표면에 뚜렷한 변화가 일어나지 않는다는 사실을 확인하였다. 본 발표에서는 수소와 진공 조건에서 관찰된 상이한 광발광 특성과 그래핀/$SiO_2/Si$에서 관찰된 p-형 도핑과의 상관관계를 설명하고자 한다.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.