• Current Photovoltaic Research
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• v.2 no.1
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• pp.28-35
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• 2014

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.399.2-399.2
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• 2016

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 높은 효율과 낮은 제조비용, 높은 신뢰성으로 인해 박막 태양전지 중 가장 각광받고 있다. 특히 유리기판 대신 가볍고 유연한 철강소재나 플라스틱 소재를 이용하여 발전분야 외에 건물일체형, 수송용, 휴대용등 다양한 분야에 적용이 가능하다. 이러한 유연 기판을 이용한 CIGS 태양전지의 개발을 위해서는 기판의 특성에 따른 다양한 공정개발이 선행되어야 한다. Poly-imide와 같은 유연기판은 공정온도가 $400^{\circ}C$이하로 낮고 기판이 매우 얇아 기존 Mo 공정을 개선하여야한다. 이러한 유연기판의 특성을 고려하여 본 연구에서는 기존 bi-layer Mo의 bottom layer의 두께를 조절하여 박막의 strain을 조절하였다. 유연기판으로는 SKC KOLON에서 제조된 GL type의 기판을 사용하였다. 기판의 두께는 50um이다. 먼저 Mo의 bottom layer 두께 비율을 기존 12.5%에서 50%로 증가 시켰으며 전체 박막의 두께 역시 900nm에서 500nm로 두께를 감소시키며 실험을 실시하였다. 그 후 흡수층은 Co-Evaporation 방법을 이용하여 제조하였으며 이때 공정온도는 기존 공정온도에서 450, $400^{\circ}C$로 낮추어 흡수층을 제조하였다. 소자 제조 후 초기 Mo의 strain 개선과 저온공정이 적용되지 않은 경우 4.4%에서 공정 최적화 후 13%로 효율이 증가하였다. 제조된 흡수층은 SEM, XRF, XRD등을 이용하여 분석하였으며 그 외 일반적인 방법을 이용하여 Mo, CdS, TCO, Al grid를 제조하였다. AR 코팅은 제외 하였으며 제조된 소자는 솔라 시뮬레이터를 이용하여 효율 특성 분석을 실시하였으며 Q.E. 분석을 실시하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.55-56
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• 2006

We investigated the diffraction grating efficiency by the DPSS laser beam wavelength to improve the diffraction efficiency on AsGeSeS & Ag/ AsGeSeS thin film. Diffraction efficiency was obtained from DPSS(532nm)(P:P)polarized laser beam on AsGeSeS, Ag/ AsGeSeS and AsGeSeS/Ag/AsGeSeS thin films. As a result, for the laser beam intensity, 0.24 mW, single AsGeSeS thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for 2.4 mW, it was recorded with the fastest speed of 50 s, which the diffraction grating forming speed is faster than that of 0.24 mW beam. Ag/ AsGeSeS and AsGeSeS/ Ag/ AsGeSeS multi-layered thin film also show the faster grating forming speed at 2.4 mW and higher value of diffraction efficiency at 0.24 mW.

• Proceedings of the Korean Nutrition Society Conference
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• 2003.05a
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• pp.236.2-236.2
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• 2003

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.441-447
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• 2017

본 논문에서는 다양한 원소 조합을 통한 다양한 특성과 2D 구조의 형성이 가능한 물질로서 최근 많은 응용에 활용되고 있는 TMD물질에 대하여 strain 엔지니어링 방법을 탐색하고자 하였다. 에디슨 나노물리의 LCAO 기반 DFT 전자구조계산 SW를 이용해 4, 5, 6족의 TMD물질($MX_2$, M = Zr, Nb, Mo; X = S, Se, Te)의 monolayer, bulk 상태에 strain을 가했을 때 전자 구조의 변화를 계산하였다. Band gap 크기, 전자의 effective mass의 변화, direct-indirect gap transition 등을 전이금속의 종류에 따라 분류하여 분석할 수 있었다.

• Prospectives of Industrial Chemistry
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• v.23 no.5
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• pp.12-20
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• 2020

최근 층상구조를 가진 전이금속 칼코겐 화합물이 새로운 고성능 리튬이온전지 음극소재로서 주목받고 있다. 층상구조 물질들의 고성능 전극 소재 활용에 있어 박리를 이용한 정확한 층의 개수 조절은 전기화학 반응성을 증가시키고, 전극 필름 내에서의 균일한 거동을 위해서 매우 중요하다. 볼 밀링 공정은 이차전지 전극 소재 제조에 있어서 주로 물질의 분쇄나 고상 화학반응을 유도하여 합금 형태의 전극 소재 개발에 보편적으로 사용되는 공정이나, 층상구조를 가진 전이금속 칼코겐 화합물에 적용하면 층상구조 물질에 고체윤활작용을 일으켜 박리가 촉진된다. 이러한 성질을 이용하여 다양한 종류의 전이금속 칼코겐 화합물(예: MoS₂, MoSe₂, NbSe₂)에 적절한 카본 매트릭스 물질과 복합화를 통해 새로운 전극 소재를 합성하고, 이를 통해 고성능 리튬이온전지 음극 소재를 제조하는 연구 동향에 대해 보고하고자 한다.

• Current Optics and Photonics
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• v.4 no.4
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• pp.353-360
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• 2020

Adopting an elaborately designed reflective objective consisting of four mirrors, we have developed a rotating-polarizer-type microspot spectroscopic ellipsometer (SE) with an ultra-small spot size. The diameter of the focused beam, whether evaluated using a direct-image method or a knife-edge method, is less than 8.4 ㎛. After proper correction for the polarizing effect of the mirrors in the reflective objective, we unambiguously determine the dispersion of the complex refractive index and the thickness of monolayer MoS₂ using the measured microspot-spectroellipsometric data. The measured ellipsometric spectra are sensitive enough to identify small variations in thickness of MoS₂ flakes, which ranged from 0.48 nm to 0.67 nm.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2007-2010
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• 2008

Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

• Korean Journal of Metals and Materials
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• v.50 no.9
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• pp.653-657
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• 2012

In this study, a molybdenum disilicide ($MoSi_2$) coating process was investigated by hydrogen reduction and Si-pack cementation. At first, the metallic Mo coating was carried out by hydrogen reduction of $MoO_3$ powder at $750^{\circ}C$ for various holding times (1, 2, 3 h) in hydrogen atmosphere. A $4.3{\mu}m$ thick metallic molybdenum thin film was formed at 3 h. $MoSi_2$ was obtained by Si-pack cementation on molybdenum thin film through hydrogen reduction processing. It was carried out using $Si:Al_2O_3:NH_4Cl=5:92:3$ (wt%) packs at $900^{\circ}C$ for various holding times (30, 60, 90 min) in Ar atmosphere. When the holding time was 90 min, a $MoSi_2$ layer was coated successfully and a $15.4{\mu}m$ thickness was observed.