• 제목/요약/키워드: MoSe2/Mo

검색결과 486건 처리시간 0.034초

전기로 셀렌화 공정에 의한 CuInSe2 박막 연구

  • 고항주;이경훈;김진혁;김효진;한명수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.318-318
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    • 2010
  • 전기로를 이용하여 셀렌화한 $CuInSe_2$ (CIS)박막에 대해 연구한 결과를 발표하고자 한다. 화석연료의 과도한 사용으로 지구온난화의 환경문제가 대두되면서 영구적이고 무상의 태양에너지 이용에 대한 필요성이 점차 높아지고 있다. 빛에너지를 전기에너지로 변화시키기 위한 태양전지는 재료에 따라 다양하게 개발되고 있으며 그 중 가장 주목을 받고 있는 것 중의 하나가 $CuInSe_2$을 흡수층으로 하는 CIS 박막 태양전지이다. CIS 박막은 태양전지의 흡수층으로 사용되는데 직접천이형 밴드구조를 가지고 있고, 약 $10^5\;cm^{-1}$의 높은 광흡수계수를 가지고 있어 태양전지의 흡수층으로 적합한 물질로 각광받고 있다. 에너지 밴드갭이 1eV로 실리콘과 유사한 밴드갬을 가지고 있으나 이는 Ga, Al을 In 대신 치환함으로 조절할 할 수 있다. 무엇보다도 유리와 같은 저가의 기판위에 스퍼터와 같은 장치로 대면적 CIS 태양전지를 만들수 있다는 것이 산업적인면에서의 장점으로 알려져 있다. 본 연구에서는 $50mm{\times}50mm$ 넓이의 sodalime 유리판을 기판으로 하여 CIS 박막을 제조하고 연구하였다. 스퍼터를 이용하여 유리기판 위에 Mo (Molybdenum) 을 증착하고 그 위에 Cu-In막을 증착하였다. Cu-In/Mo/유리기판 시료는 전기로에 도입되어 셀렌화 처리 하였다. 전기로는 $10^{-1}$ Torr 정도의 진공을 수분간 유지하여 반응할 수 있는 공기(산소)를 제거하였다. 진공 혹은 5N의 고순도 질소를 흘려주며 열을 가하여 셀렌화를 하였다. 전기로에는 1g의 셀레늄(Se)이 Cu-In/Mo/유리기판 시료와 함께 도입되었다. Se이 Cu-In 막과 높은 반응성을 갖도록 Se과 Cu-In 시료는 그라파이드 상자에 함께 넣었고, 그라파이트 상자는 전기로에 넣어 셀렌화하였다. 셀렌화 온도는 $400^{\circ}C{\sim}500^{\circ}C$까지 변화시켜 가며 CIS 박막을 제조하였으며 그 물성도 조사하였다. 물성 조사는 사진, 현미경, SEM, EDX, XRD, Hall effects를 이용하였다. 셀렌화 온도가 $450^{\circ}C$ 이상에서는 CIS 박막의 흡착성이 낮아 CIS 박막이 Mo 표면에서 떨어짐을 알 수 있었다. 셀렌화 후 박막에 함유된 Se은 48%~49% 정도있었다. 제조된 CIS 박막시료를 SEM으로 확인한 결과 생성된 CIS/Mo 사이에 계면층이 생겼있음 알 수 있었다. 이러한 계면층은 $MoSe^2$층으로 사료되고, 셀렌화 온도가 높으면 계면층의 두께도 증가되는 경향을 보였다. 셀렌화 온도가 높아질수록 많은 양의 산소가 CIS 박막에 들어가는 것도 알 수 있었다. 학술회의에서 보다 깊은 조사결과를 발표하고자 한다.

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Mo:Na 두께에 따른 Cu(In,Ga)Se2 박막의 물성과 효율변화 (The Physical Properties and Efficiencies of Cu(In,Ga)Se2 Thin Films Depending on the Mo:Na Thickness)

  • 신윤학;김명한
    • 한국재료학회지
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    • 제24권3호
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    • pp.123-128
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    • 2014
  • To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1${\mu}m$. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

Ga2Se3 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se2 박막의 Ga 분포 변화 연구 (Ga Distribution in Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Co-Sputtered Cu-In-Ga Precursor with Ga2Se3 Layer)

  • 정광선;신영민;조양휘;윤재호;안병태
    • 한국재료학회지
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    • 제20권8호
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    • pp.434-438
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    • 2010
  • The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

성인 여성의 미량무기질(Fe, Zn, Cu, Mn, Se, Mo 및 Cr) 섭취량 - 분석치와 계산치의 비교 - (Dietary intakes of Fe, Zn, Cu, Mn, Se, Mo, and Cr of Korean adult women - Comparison between the data from analyzed and calculated -)

  • 김경희;임현숙
    • 한국가정과학회지
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    • 제9권3호
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    • pp.69-79
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    • 2006
  • The previous studies on the intake of trace elements performed in Korea were only concerned about major elements like Fe, Zn or Cu. There is little data about the intake of minor elements like Mn, Se, Mo or Cr. And most of the data were obtained by calculation using Food Composition Tables or by analysis using atomic absorption spectrophotometers (AAS). The purpose of this study, therefore, was to evaluate the dietary intake of seven trace elements, Fe, Zn, Cu, Mn, Se, Mo, and Cr of Korean adult wonmen and to compare the data between analyzed using ICP-MS (or ICP-AES) and calculated by the CAN-Pro (or Food Composition Table). A total of nineteen adult women participated voluntarily in this study and collected one-tenth of the foods that they consumed for three consecutive days. Analyzed intake of Fe of the subjects was $6.94{\pm}2.18$ (calculated, $18.87{\pm}4.50$) mg/day, that of Ze was $9.35{\pm}4.95$ (calculated, $8.35{\pm}2.87mg/day$), that of Cu was $1.18{\pm}0.26\;(1.11{\pm}0.32mg/day)$, that of Mn was $3.69{\pm}0.69\;(2.83{\pm}1.68mg/day)$, that of Se was $41.93{\pm}9.28$ (calculated, $27.58{\pm}6.97{\mu}g/day$), that of Mo was $134.0{\pm}49.1{\mu}g/day$, and that of Cr was $136.5{\pm}147.9{\mu}g/day$. The analyzed Fe intake of the subjects did not meet Estimated Average Requirement (EAR) nor Recommended Intakes (RI) for Korean women aged 20-29 years old. However, the analyzed intakes of the other six elements, Zn, Cu, Mn, Se, Mo, and Cr, seemed to meet each of the respective RIs. The analyzed Fe intake was significantly lower than the calculated one, in fact by 2.72 times, however, the analyzed intakes of the other elements, Mn and Se, were significantly higher and those of Zn and Cu were similar than each of the calculated ones. The difference of the data between analyzed and calculated intakes indicates that it is necessary to set up database on trace element contents of foods of the Food Composition Table and the CAN-Pro so as to have accuracy.

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화학기상증착법을 통해 합성된 그래핀 및 MoSe2를 이용한 반데르발스 수직이종접합 전계효과 트랜지스터 (Field-effect Transistors Based on a Van der Waals Vertical Heterostructure Using CVD-grown Graphene and MoSe2)

  • 최선연;고은비;권성균;김민희;김설아;이가은;최민철;김현호
    • 접착 및 계면
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    • 제24권3호
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    • pp.100-104
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    • 2023
  • 본 Van der Waals heterostructure 기반의 트랜지스터의 경우 표면에 불포화 결함(dangling bond) 없이 Van der Waals 힘으로만 결합되어 있어 우수한 전자특성을 보이기 때문에 최근 많이 연구되고 있다. 하지만, 트랜지스터에 사용되는 2차원 물질들은 대부분 스카치테이프(mechanical exfoliation) 방법을 기반으로 하는 기초 연구에 머물러 있다. 그렇기 때문에 이를 발전시키기 위해 반데르발스 수직이종접합 전계효과 트랜지스터를 제작하는 데 사용되는 모든 소재를 CVD (chemical vapor deposition)에서 성장된 소재를 사용하였다. 전극으로는 CVD로 성장된 그래핀을 포토리소그래피 공정을 통해 패터닝하여 사용하였으며, CVD로 성장된 MoSe2를 픽업/전사하는 방식으로, 둘 사이의 반데르발스 이종접합 전계효과 트랜지스터를 제작하였다. 본 연구에서는 이를 통해 제작된 소자의 특성을 보았으며 MoSe2의 결함 유무에 따라 트랜지스터의 특성에 변화가 있음을 확인하였다.

일부 젊은 성인여자의 Fe, Zn, Cu, Mn, Se, Mo 및 Cr의 식사섭취, 혈청농도 및 소변배설 (Dietary Intakes, Serum Concentrations, and Urinary Excretions of Fe, Zn, Cu, Mn, Se, Mo, and Cr of Korean Young Adult Women)

  • 김경희;임현숙
    • Journal of Nutrition and Health
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    • 제39권8호
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    • pp.762-772
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    • 2006
  • This study was conducted to investigate dietary intakes, serum concentrations, and urinary excretions of iron (Fe), zinc (Zn), copper (Cu), manganese (Mn), selenium (Se), molybdenum (Mo), and chromium (Cr) of Korean young adult women. A total of 19 apparently healthy young adult women aged in their twenties or thirties participated voluntarily. One-tenth of all foods they consumed for 3 consecutive days were collected, all urine excreted for the same 3 days was gathered, and fasting venous blood was withdrawn for the trace mineral analyses. Of the food, blood, and urine samples, the contents of Zn, Cu, Mn, Se, Mo, and Cr were analyzed by inductively coupled plasma-mass spectroscopy (ICP-MS) and that of Fe by inductively coupled plasma-atomic emission spectroscopy (ICP-AES) after wet digestion. The intake of Fe, $6.94{\pm}2.18mg$, did not meet the estimated average requirement (EAR) for Korean women aged 20-29 years old. On the contrary, the intakes of Zn ($9.35{\pm}4.95mg$), Cu ($1.18{\pm}0.26mg$), and Mn ($3.69{\pm}0.69mg$) were sufficient for each respective EAR. However, some of the subjects did not take the EAR for Zn. The Se intake, $41.93{\pm}9.28{\mu}g$, however, was almost similar to the EAR for Se. Although there are no references for Mo and Cr, the intakes of these minerals ($134.0{\pm}49.1\;and\;136.5{\pm}147.9{\mu}g$, respectively) seemed to be excessively sufficient. Serum Fe concentration, $88.7{\pm}36.8{\mu}g/dL$, seemed to be a little bit lower than its reference median but within its normal range. Approximately one-fourth of the subjects were in anemic determined by Hb and Hct and below the deficiency serum level of Fe, $60{\mu}g/dL$. In addition, serum Se concentration, $3.73{\pm}0.60{\mu}g/dL$, was also below its reference median and normal range. However, serum concentrations of Zn ($99.6{\pm}30.6{\mu}g/dL$) and Mo ($0.25{\pm}0.10{\mu}g/dL$) were fairly good compared to each reference median. The status of Cu could be determined as good although its serum concentration ($91.6{\pm}14.6{\mu}g/dL$) was slightly below its reference median. Since there are no decisive reference values, it was not easy to evaluate serum concentrations of Mn ($0.93{\pm}0.85{\mu}g/dL$) and Cr ($8.60{\pm}7.25{\mu}g/dL$). But Mn and Cr status seemed to be adequate. Urinary Fe excretion, $4.48{\pm}1.98{\mu}g/dL$, was pretty much lower than its reference and that of Se, $2.45{\pm}1.17{\mu}g/dL$, was also lower than its average. On the other hand, those of Zn ($42.95{\pm}20.47{\mu}g/dL$) and Cu ($5.68{\pm}1.50{\mu}g/dL$) were flirty good. In case of Mn, urinary excretion, $0.31{\pm}0.09{\mu}g/dL$, was much greater than its reference. Urinary excretions of Mo ($7.48{\pm}2.95{\mu}g/dL$) and Cr ($1.37{\pm}0.41{\mu}g/dL$) were very higher compared to each reference. The results of this study revealed that Korean young adult women were considerably poor in Fe status, a bit inadequate in Se status, partly inadequate in Zn status, and flirty good in Cu, Mn, Mo and Cr status. However, there was a problem of excessive intakes of Mo and Cr. It, therefore, should be concerned to increase the intakes of Fe, Se and Zn but to decrease Mo and Cr consumption for young adult women.

펄스전류활성 연소합성에 의한 나노구조 (Ti,Mo)Si2 제조 및 기계적 특성 (Mechanical Properties and Fabrication of Nanostructured (Ti,Mo)Si2 by Pulsed Current Activated Combustion)

  • 고인용;박나라;오세훈;손인진
    • 대한금속재료학회지
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    • 제49권8호
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    • pp.608-613
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    • 2011
  • Nanopowders of Mo, Ti and Si were made by high-energy ball milling. A dense nanostructured $(Ti,Mo)Si_2$ compound was sintered by the pulsed current activated combustion method within two minutes from mechanically activated powder of Mo, Ti and Si. A highly dense $(Ti,Mo)Si_2$ compound was produced under simultaneous application of 80 MPa pressure and a pulsed current. The mechanical properties and micorostructure were investigated. The hardness and fracture toughness of the $(Ti,Mo)Si_2$ were $1030kg/mm^2$ and $4.9MPa{\cdot}m^{1/2}$, respectively. The mechanical properties were higher than monolithic $TiSi_2$.

Mo 기판위의 NaF 중간층을 이용한 Cu(In,Ga)Se2 광흡수층의 Na 도핑특성에 관한 연구 (Na Doping Properties of Cu(In,Ga)Se2 Absorber Layer Using NaF Interlayer on Mo Substrate)

  • 박태정;신동협;안병태;윤재호
    • 한국재료학회지
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    • 제19권8호
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    • pp.452-456
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    • 2009
  • In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

CIGS 박막 태양전지를 위한 $(In,Ga)_2Se_3$ 전구체 제작 및 분석

  • 조대형;정용덕;박래만;한원석;이규석;오수영;김제하
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.285-285
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    • 2010
  • $Cu(In,Ga)Se_2$ (CIGS) 박막 태양전지 제조에는 동시증발법 (co-evaporation)으로 Cu, In, Ga, Se 각 원소의 증발을 세 단계로 제어하여 CIGS 박막을 증착하는 3-stage 방법이 널리 이용된다[1]. 3-stage 중 1st-stage에서는 In, Ga, Se 원소 만을 증발시켜 $(In,Ga)_2Se_3$ 전구체 (precursor) 박막을 성장시킨다. 고효율의 CIGS 태양전지를 위해서는 $(In,Ga)_2Se_3$ 전구체 증착의 공정 변수와 이에 따른 박막 특성의 이해가 중요하다. 본 연구에서는 Mo 박막이 증착된 소다석회유리 (soda lime glass) 기판에 동시증발장비를 이용하여 280 380 의 기판 온도에서 In, Ga, Se 물질을 증발시켜 $(In,Ga)_2Se_3$/Mo/glass 시료를 제작하였으며 XRD, SEM, EDS 등의 방법을 이용하여 특성을 분석하였다. XRD 분석 결과 기판 온도 $280{\sim}330^{\circ}C$에서는 $(In,Ga)_2Se_3$ 박막의 (006), (300) 피크가 관찰되었으며, 기판 온도가 증가할수록 (006) 피크 세기는 감소하였고 (300) 피크 세기는 증가하였다. $380^{\circ}C$에서는 (110)을 포함한 다수의 피크가 관찰되었다. 그레인 (grain) 크기는 기판 온도가 증가할수록 커지며 Ga/(In+Ga) 조성비는 기판 온도에 따라 일정함을 각각 SEM과 EDS 측정을 통해 알 수 있었다. $(In,Ga)_2Se_3$ 전구체의 (300) 배향은 CIGS 박막의 (220/204) 배향을 촉진하고[2], 이것은 높은 광전변환효율에 기여하는 것으로 알려져 있다. 때문에 $(In,Ga)_2Se_3$의 (300) 피크의 세기가 가장 큰 조건인 $330^{\circ}C$를 1st-stage 증착 온도로 하여 3-stage CIGS 태양전지 공정을 수행하였으며, $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 구조의 셀에서 광전변환효율 16.96%를 얻었다.

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Na이 첨가된 Mo 전극을 이용한 CIGS 박막 태양전지 연구 (A Study on the CIGS cells with Na-doped Mo back contact)

  • 윤재호;김기환;김민식;안병태;안세진;이정철;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.218-221
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    • 2006
  • The photovoltaic properties of CIES cells on alumina substrate were improved by using the Na-doped Mo as theabotom layer of hilo back contact. Na was supplied to the CIGS bulk region from alumina/Na-doped Mo/Mo/alumina? structure, as same assimilar to the Na diffusion from soda-lime glass. The content diffusion of Na from Na-doped bfo was smaller more controlled than that from SLG. These Our results indicate that Na-doped bfo act as Na source material and contents of Na amount can be controlled without the use of an alkali barrier layer. The best CIGS solar cell with conversion efficiency of 13.34%, $J_{sc}=34.62mA/cm^2,\;V_{oc}=0.58V$ and FF=66% for an active area of $0.45cm^2$ on the alumina substrate was obtained in the condition of for 100nm Na-doped Mo/1000nm Mo.

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