• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.388-388
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• 2010

Molybdenum oxide thin films were deposited on p-type Si(100) by an RF magnetron sputtering method. The physical and chemical properties of these films were studied with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques. The thickness of molybdenum oxide thin films was measured by spectroscopic ellipsometer (SE) and the thickness was about 200 nm. As the oxygen gas pressure increased, the thickness was decreased, the phases of the thin films were changed, and the amount of metallic Mo decreased but the contents of $Mo^{6+}$ species increases.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1996년도 제24회 춘계학술대회
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• pp.35-40
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• 1996

Friction and wear behavior of MoS$_{2}$ bonded films were evaluated at a Block-on-Ring typed tribo-tester, and their properties were compared with those of Falex tester in terms of the wear life of the films. Test results showed that friction and wear properties were significantly affected by the test methods of different contact configuration, and the wear life at a Block-on-Ring type tribo-tester was mostly governed by the resin binder. To obtain long wear life of the films, various combinations of solid-resin-content ratio and chemical resin modification were attempted and evaluated. Adhesion properties of resin binders were also measured and compared by using a scratch tester.

• 한국표면공학회지
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• 제32권3호
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• pp.433-439
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• 1999

In this study, the diffusion barrier properties of $1000\AA$ thick molybdenum compounds (Mox=1-5 Si) were investigated using sheet resistance measurements, X-ray diffractometry (XRD), and Rutherford back scattering spectrometry (RBS). Each barrier material was deposited by the de and rf magnetron co-sputtering of Mo and Si, respectively, and annealed at $500-700^{\circ}C$ for 30 min in vacuum. Each barrier material was failed at low temperatures due to Cu diffusion through grain boundaries and defects of barrier thin films or through the reaction of Cu with Si within Mo-barrier thin films. It was found that Mo rich thin films were less effective than Si rich films to Cu penetration activating Cu reaction with the substrate at a temperature higher than $500^{\circ}C$.

• 한국진공학회지
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• 제4권S2호
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• pp.24-29
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• 1995

The magnetic amd magneto-optical(MO)properties of Co-based multilayered(ML)films are known to vary sensitively according to the manufacturing methods and the film microstructures. Co/Pd and Co/Pt ML films with ultrathin layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The individual layer thicknesses of the samples were estimated making use of the angular positions of x-ray diffraction peaks. The magnetic and MO properties were investigated, and correlated systematically to the structural parameters of the films. A Kerr spectrometer was self-manufactured to measure the MO properties such as Kerr rotation angle, ellipticity and reflectivity. The rms surface roughness was also measured using atomic force microscopy. Some of the samples showed good properties for MO medium, such as large perpendicular magnetic anisotropy and Kerr rotation, and perfect squareness of the magnetic hysteresis loop.

• 한국자기학회지
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• 제5권5호
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• pp.874-879
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• 1995

고 포화자속밀도를 갖는 Fe미세결정 박막의 자기특성 및 미세구조에 미치는 첨가원소의 영향을 조사하였다. Mo 첨가 박막의 경우, $Fe_{2}Mo$, $Fe_{4}N$, $Fe_{3-2}N$상의 생성으로 연자기 특성이 발현되지 않았다. Ta첨가 박막의 경우, 미세한 TaN, TaC 상이 석출하여 $\alpha$-Fe 결정립을 효과적으로 미세화 시켰으며 Fe 질화물의 생성도 억제되었다. 이에 따라 우수한 연자기 특성이 발현되었으며 FeTaN계 박막은 4000, FeTaC 박막은 2700의 높은 투자율을 나타내었다.

• 한국표면공학회지
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• 제44권6호
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• pp.264-268
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• 2011

The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2007-2010
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• 2008

Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.88-88
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• 2010

We synthesized molybdenum thin films deposited by RF magnetron sputtering and physicochemical analysis was performed. The physical and chemical properties of these films were examined with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The obtained film at the oxygen ratio of 0% showed crystallinity of cubic Mo(110) phase. After the oxygen ratio increased more than 5% in the sputter gas, the molybdenum films were formed as an amorphous phase. The thickness of the Mo thin film was drastically decreased from 1000 nm to ca 70 nm after introduction of oxygen in the sputter gas confirmed by spectroscopic ellipsometer (SE) and scanning electron spectroscopy (SEM). The calculated band gap of the film deduced from SE data increased from 3.17 to 3.63 eV by addition of oxygen in the sputter gas. The roughness of the Mo film was examined with atomic force microscopy (AFM) and it was dramatically decreased by introducing of oxygen during sputtering. XPS results revealed that the ratio of metallic Mo species in the film decreased by the contents of Mo(VI) species increased at the ratio of oxygen increased in the sputter gas and fully oxidized at low content of oxygen in the sputter gas.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.89-90
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• 1991

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권3호
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• pp.149-154
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• 2000

Bi-layer Mo films were deposited on soda-lime glass substrates using DC magnetron supttering. Increasing gas pressure, the resistivity varied from $1\times10^{-5}\; to\; 8.3\times10^{-3}\; \Omega.cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The micro-structure of the compressively-stressed film which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. The impurity levels in the Mo film exhibited highly concentrated Na, Se and O elements due to less dense micro-structure. The degree of Na diffusion depends on the type of the glass substrate used and the nature of the Mo film.