• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.293-298
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• 2011

The most widely used method to form an electrode in industrial solar cells are screen printing. Screen printing is characterized by a relatively simple and well-known production sequence with high throughput rates. However the method is difficult to implement a fine line width of high-efficiency solar cells can not be made. The open circuit voltage(Voc) and the short circuit current density(Jsc) and fill factor(FF) need to be further improved to increase the efficiency of silicon solar cells. In this study, gravure offset printing method using the multicrystalline-silicon solar cells were fabricated. Gravure off-set printing method which can print the fine line width of finger electrode can have the ability reduce the shaded area and increase the Jsc. Moreover it can make a high aspect ratio thereby series resistance is reduced and FF is increased. Approximately $50{\mu}m$ line width with $35{\mu}m$ height was achieved. The efficiency of gravure off set was 0.7% higher compare to that of scree printing method.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.8-13
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• 1998

This work presents the way how to evaluate the degree of reversibility of the discharging process undergone by the nickel hydroxide film cathodically deposited on pure nickel as a positive electrode for electrochemical capacitor using the combined cyclic voltammetry and potential drop method, supplemented by galvanostatic discharge and open-circuit potential transient methods. The time interval necessary just to establish the current reversal of anodic to cathodic direction from the moment just after applying the potential inversion of anodic to cathodic direction, was obtained on cyclic voltammogram. The cathodic charge density passed upon dropping the applied potential, was calculated on potentiostatic current density-time curve. Both the time interval and the cathodic charge density in magnitude can be regarded as being measures of the degree of reversibility of the discharging process undergone by the positive active material for supercapacitor, i.e. , the longer the time interval is, the lower is the degree of reversibility and the greater the cathodic charge density is, the higher is the degree of reversibility. From the applied potential dependences of the time interval and cathodic charge density, discharge at $0.42 V_{SCE}$ was determined to be the most reversible.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.774-780
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• 1998

For the stabilization of the spinel structured $LiMn_2O_4$, a fraction of manganese was substituted with various metals such as Mg, Fe, V, W, Cr, Mo with Mn that had a similar ionic radii ($LiM_xMn_{2-x}O_4(0.05{\leq}x{\leq}0.02)$). The $LiM_xMn_{2-x}O_4$ showed a substantial improvement as lower capacity loss than that of the spinel structured $LiMn_2O_4$ when it was used as a cathode material. And with the partial substitution, the chemical diffusion coefficient for $LiMg_{0.05}Mn_{1.9}O_4$ and $LiCr_{0.1}Mn_{1.9}O_4$ was increased by and order of magnitude compared to that of the $LiMn_2O_4$ with spinel structure. The results showed that significant improvement can be made on the electrochemical characteristics as the structure of the $LiMn_2O_4$ electrode material was stabilized by the partial substitution.

• Journal of the Korean Electrochemical Society
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• v.4 no.3
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• pp.98-103
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• 2001

The electrochemical characteristics and specific capacitance were investigated by preparation processes (dip coating method, doctor blade coating method and paste rolling method) of activated carbon electrode for an EDLC(electric double layer capacitor). The EDLC using $LiPF_6$ salts and PC-DEC solvents showed good specific capacitance, 130F/g and small IR-drop at linear time-voltage curve. 0.11V, Cyclic voltammetry analysis using the activated carbon electrode prepared by dip coating method was shown closer to ideal EDLC characterization.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.386-391
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• 1999

The charge-discharge, the high-rate dischargeability, and the self discharge characteristics of the electrodes composed of rapidly solidified ZrV\ulcornerMn\ulcornerMo\ulcornerNi\ulcorneralloy, which has the form of partial substitution of Mn, Mo, Ni for V in $ZrV_2$ were studied. The alloys were prepared using Arc & RSP(Rapid Solidification Process) at the rotating roller speed of 2000 and 5000 rpm. Some of them were received heat treatment at$ 560 ^{\circ}C$ for 1 hour after the solidification to investigate the effect of the heat treatment. It was fond that cycle life was significantly improved by RSP, whereas discharge capacity, activation rte and high rate dischargeability were decreased compared with the conventional arc melting method. The capacity loss seems to be due to the loss of the crystallinity and the increase of the cycle life ascribed to the presence of the amporphous phase as well as the refined grain size of less than 0.2$\mu\textrm{m}$. Heat treatment of the alloy cooled at 2000 rpm improved the cycle life. In case of the alloys cooled at 5000 rpm, both the discharge capacity and the activation rate were significantly improved by the heat treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.93-97
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• 2003

The crystallization behavior of amorphous silicon is affected by direction and intensity of electric field in FALC（Field-Aided Lateral Crystallization). Electric field was calculated in a simplified model using conductivity data of Mo, a-Si, $SiO_2$and boundary conditions for electric potential at the electrodes. The magnitude of electric field intensity in each corner of cathode was much larger than that in the center of patterns, and the electric field direction was 50~60 degree outside to cathode. And electric field intensity at a relatively small pattern was larger than that of a large pattern.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1364-1369
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• 2005

In this paper, we have identified the mechanism of C-V hysteresis behavior often observed in pentacene organic thin-film transistors (OTFTs). The capacitance-voltage (C-V) characteristics were measured for pentacene OTFTs fabricated on glass substrates with MoW as gate/source/drain electrode and TEOS $SiO_2$ as gate insulator. The measurements were made at room temperature and elevated temperatures. From the room temperature measurements, we found that the hysteresis behavior was caused by hole injection into the gate insulator from the pentacene semiconductor for large negative gate voltages, resulting in the negative flat-band voltage shift. However electron injection was observed only at elevated temperatures

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.483-489
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• 2010

Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.

• Journal of the Korean Electrochemical Society
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• v.15 no.1
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• pp.19-26
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• 2012

SEI (solid electrolyte interphase) layers are generated on a graphite negative electrode from three different electrolytes and low-temperature ($-30^{\circ}C$) charge/discharge performance of the graphite electrode is examined. The electrolytes are prepared by adding 2 wt% of vinylene carbonate (VC) and fluoroethylene carbonate (FEC) into a standard electrolyte solution. The charge-discharge capacity of graphite electrode shows the following decreasing order; FEC-added one>standard>VC-added one. The polarization during a constant-current charging shows the reverse order. These observations illustrate that the SEI film resistance and charge transfer resistance differ according to the used additives. This feature has been confirmed by analyzing the chemical composition and thickness of three SEI layers. The SEI layer generated from the standard electrolyte is composed of polymeric carbon-oxygen species and the decomposition products ($Li_xPF_yO_z$) of lithium salt. The VC-derived surface film shows the largest resistance value even if the salt decomposition is not severe due to the presence of dense film comprising C-O species. The FEC-derived SEI layer shows the lowest resistance value as the C-O species are less populated and salt decomposition is not serious. In short, the FEC-added electrolyte generates the SEI layer of the smallest resistance to give the best low-temperature performance for the graphite negative electrode.