• Journal of Information Display
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• 제10권1호
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Geomechanics and Engineering
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• 제20권6호
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• pp.475-484
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• 2020

The prediction of the ground conditions ahead of a tunnel face is very important, especially for tunnel boring machine (TBM) tunneling, because encountering unexpected anomalies during tunnel excavation can cause a considerable loss of time and money. Several prediction techniques, such as BEAM, TSP, and GPR, have been suggested. However, these methods have various shortcomings, such as low accuracy and low resolution. Most studies on electrical resistivity tomography surveys have been conducted using numerical simulation programs, but laboratory experiments were just a few. Furthermore, most studies of scaled model tests on electrical resistivity tomography were conducted only on the ground surface, which is a different environment as compared to that of mechanized tunneling. This study performed a laboratory experimental test to extend and verify a prediction method proposed by Lee et al., which used electrical resistivity tomography to predict the ground conditions ahead of a tunnel face in TBM tunneling environments. The results showed that the modified dipole-dipole array is better than the other arrays in terms of predicting the location and shape of the anomalies ahead of the tunnel face. Having longer upper and lower borehole lengths led to better accuracy of the survey. However, the number and length of boreholes should be properly controlled according to the field environments in practice. Finally, a modified and verified technique to predict the ground conditions ahead of a tunnel face during TBM tunneling is proposed.

• 공업화학
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• 제8권2호
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• pp.161-171
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• 1997

인쇄회로기판의 식각폐수를 전기화학적 방법을 이용하여 양극에서 이를 재생하고, 음극에서 구리를 석출하기 위한 실험을 행하였다. 양극에서의 Cu(I)의 산화에 따른 Cu(I)/Cu(II) 변화는 Pt와 Ag/AgCl/4M KCl 전극사이의 전위차를 이용하여 측정하였으며, 반응의 진행에 따른 양극에서의 염소기체 발생은 용액내에 Cu(I)의 농도를 일정치 이상으로 유지시키고, 비다공성 흑연전극을 이용하여 억제할 수 있었다. 그리고, 음극에서의 구리석출은 전류밀도 $360mA/cm^2$, 구리이온농도 12g/l 일때 가장 효율적이며 석출된 구리는 dendrite구조임을 알 수 있었다. 또한 석출효율과 회수방법을 고려할 때 음극으로서 Ti전극을 사용할 경우 가장 우수한 효율을 얻을 수 있었다. 전해온도가 증가함에 따라서 전류효율은 낮아졌으며, 전력효율은 $50^{\circ}C$에서 최대값을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 한국세라믹학회지
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• 제45권6호
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• pp.331-335
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• 2008

The purpose of this study is to characterize the photo-catalytic efficiency of $TiO_2$ nanotube with respect to the distribution of anatase phase which can be changed by the annealing temperature of $TiO_2$ nanotube. $TiO_2$ nanotube was fabricated by the anodization method in the 0.5 wt% HF electrolyte. And then the $TiO_2$ nanotube was annealed at temperatures ranging from $380^{\circ}C$ to $780^{\circ}C$ in dry oxygen ambient for 2 h. For the photo-catalytic water-splitting tests, the photocurrent density was measured as a function of applied potential with a potentiostat using a Ag/AgCl reference, Pt counter electrode, and 1 M KOH electrolyte under illumination of UV by a Xe arc lamp of 1 KW. According to the UV photo-catalytic water-splitting tests, the nanotube annealed at $560^{\circ}C$ was found to show the highest photocurrent density.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.232-239
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• 2013

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

• Nuclear Engineering and Technology
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• 제53권9호
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• pp.3003-3011
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• 2021

A FAC (flow-accelerated corrosion) test was performed for a straight pipe composed of the SA335 Gr P22 and SA106 Gr B (SA106-SA335-SA106) types of steel with welds as a function of the flow rate in the range of 7-12 m/s at 150 ℃ and with DO < 5 ppb at pH levels ranging from 7 to 9.5 up to a cumulative test time of 7200 h using the FAC demonstration test facility. Afterward, the experimental pipe was examined destructively to investigate opposite effects as well as entrance effects. In addition, the FAC rate obtained using a pipe specimen with a 50 mm inner diameter was compared with the rate obtained from a rotating cylindrical electrode. The effects of the complicated fluid flows at the elbow and orifice of the pipeline were also evaluated using another test section designed to examine the independent effects of the orifice and the elbow depending on the distance and the combined effects on orifice and elbow. The tests were performed under the following conditions: 130-150 ℃, DO < 5 ppb, pH 7 and a flow rate of 3 m/s. The FAC rate was determined using the thickness change obtained from commercial room-temperature ultrasonic testing (UT).

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.423-432
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• 2023

With the increasing demand for mobile devices featuring multi-touch operation, extensive research is being conducted on touch screen panel (TSP) Readout ICs (ROICs) that should possess low power consumption, compact chip size, and immunity to external noise. Therefore, this paper discusses capacitive touch sensors and their readout circuits, and it introduces research trends in various circuit designs that are robust against external noise sources. The recent state-of-the-art TSP ROICs have primarily focused on minimizing the impact of parasitic capacitance (Cp) caused by thin panel thickness. The large Cp can be effectively compensated using an area-efficient current compensator and Current Conveyor (CC), while a display noise reduction scheme utilizing a noise-antenna (NA) electrode significantly improves the signal-to-noise ratio (SNR). Based on these achievements, it is expected that future TSP ROICs will be capable of stable operation with thinner and flexible Touch Screen Panels (TSPs).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.431-431
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• 2016

Typical Cu(In,Ga)Se2 (CIGS)-based solar cells have a buffer layer between CIGS absorber layer and transparent ZnO front electrode, which plays an important role in improving the cell performance. Among various buffer materials, chemical bath deposition (CBD)-ZnS is being steadily studied to alternative to conventional CdS and the efficiency of CBD-ZnS/CIGS solar cell shows the comparable values with that of CdS/CIGS solar cell. The intriguing thing is that reversible changes occur after exposure to illumination due to the metastable defect states in completed ZnS/CIGS solar cell, which induces an improvement of solar cell performance. Thus, it implies that the understanding of metastable defects in CBD-ZnS/CIGS solar cell is important issue. In this study, we fabricate the ITO/i-ZnO/CBD-ZnS/CIGS/Mo/SLG solar cells by controlling the NH4OH mole concentration (from 2 M to 3.5 M) of CBD-ZnS buffer layer and observe their conversion efficiency with and without light soaking for 1 hr. From the results, NH4OH mole concentration and light exposure can significantly affect the CBD-ZnS/CIGS solar cell performance. In order to investigate that which layer can contain metastable defect states to influence on solar cell performance, impedance spectroscopy and capacitance profiling technique with exposure to illumination have been applied to CBD-ZnS/CIGS solar cell. These techniques give a very useful information on the density of states within the bandgap of CIGS, free carriers density, and light-induced metastable effects. Here, we present the rearranged charge distribution after exposure to illumination and suggest the origin of the metastable defect states in CBD-ZnS/CIGS solar cell.