• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.293-298
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• 2011

The most widely used method to form an electrode in industrial solar cells are screen printing. Screen printing is characterized by a relatively simple and well-known production sequence with high throughput rates. However the method is difficult to implement a fine line width of high-efficiency solar cells can not be made. The open circuit voltage(Voc) and the short circuit current density(Jsc) and fill factor(FF) need to be further improved to increase the efficiency of silicon solar cells. In this study, gravure offset printing method using the multicrystalline-silicon solar cells were fabricated. Gravure off-set printing method which can print the fine line width of finger electrode can have the ability reduce the shaded area and increase the Jsc. Moreover it can make a high aspect ratio thereby series resistance is reduced and FF is increased. Approximately $50{\mu}m$ line width with $35{\mu}m$ height was achieved. The efficiency of gravure off set was 0.7% higher compare to that of scree printing method.

• 전기화학회지
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• 제1권1호
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• pp.8-13
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• 1998

This work presents the way how to evaluate the degree of reversibility of the discharging process undergone by the nickel hydroxide film cathodically deposited on pure nickel as a positive electrode for electrochemical capacitor using the combined cyclic voltammetry and potential drop method, supplemented by galvanostatic discharge and open-circuit potential transient methods. The time interval necessary just to establish the current reversal of anodic to cathodic direction from the moment just after applying the potential inversion of anodic to cathodic direction, was obtained on cyclic voltammogram. The cathodic charge density passed upon dropping the applied potential, was calculated on potentiostatic current density-time curve. Both the time interval and the cathodic charge density in magnitude can be regarded as being measures of the degree of reversibility of the discharging process undergone by the positive active material for supercapacitor, i.e. , the longer the time interval is, the lower is the degree of reversibility and the greater the cathodic charge density is, the higher is the degree of reversibility. From the applied potential dependences of the time interval and cathodic charge density, discharge at $0.42 V_{SCE}$ was determined to be the most reversible.

• 공업화학
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• 제9권5호
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• pp.774-780
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• 1998

스피넬 구조인 $LiMn_2O_4$의 안정성을 향상시키기 위해서 망간과 비슷한 이온반경을 갖는 여러 가지 금속원소, Mg, Fe, V, W, Cr, Mo들을 일부 치환하였으며 ($LiM_xMn_{2-x}O_4(0.05{\leq}x{\leq}0.02)$), 이 결과 $LiM_xMn_{2-x}O_4$ 정극은 정극물질로 사용할 경우 $LiMn_2O_4$보다 낮은 용량감소를 나타냈다. 그리고 화학확산계수의 측정 결과 $LiMg_{0.05}Mn_{1.9}O_4$와 $LiCr_{0.1}Mn_{1.9}O_4$의 화학확산계수는 $LiMn_2O_4$보다 약 10배 이상 크게 나타났다. 이러한 결과를 볼 때 $LiMn_2O_4$에 여러 가지 금속원소를 치환시킴으로 구조적인 안정화로 인한 전기화학적 성능을 향상시킬 수 있었다.

• 전기화학회지
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• 제4권3호
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• pp.98-103
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• 2001

EDLC(electric double layer capacitor)용 활성탄소전극의 제조공정을 dip coating method, doctor blade coating method, paste rolling method로 달리하여 전기화학적 특성과 비축전 용량을 조사하였다. Dip coating method에 의한 전극제조시 전해질염으로 LiPF6를 이용하고 유기용매로 PC-DEC를 이용한 EDLC의 비축전 용량이 130F/g으로 가장 우수하였고, 선형의 시간전압곡선에서의 IR-drop도 0.11V로 작았으며 CV(cyclic voltammetry) 분석 또한 이상적인 EDLC의 특성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• 한국재료학회지
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• 제9권4호
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• pp.386-391
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• 1999

The charge-discharge, the high-rate dischargeability, and the self discharge characteristics of the electrodes composed of rapidly solidified ZrV\ulcornerMn\ulcornerMo\ulcornerNi\ulcorneralloy, which has the form of partial substitution of Mn, Mo, Ni for V in $ZrV_2$ were studied. The alloys were prepared using Arc & RSP(Rapid Solidification Process) at the rotating roller speed of 2000 and 5000 rpm. Some of them were received heat treatment at$ 560 ^{\circ}C$ for 1 hour after the solidification to investigate the effect of the heat treatment. It was fond that cycle life was significantly improved by RSP, whereas discharge capacity, activation rte and high rate dischargeability were decreased compared with the conventional arc melting method. The capacity loss seems to be due to the loss of the crystallinity and the increase of the cycle life ascribed to the presence of the amporphous phase as well as the refined grain size of less than 0.2$\mu\textrm{m}$. Heat treatment of the alloy cooled at 2000 rpm improved the cycle life. In case of the alloys cooled at 5000 rpm, both the discharge capacity and the activation rate were significantly improved by the heat treatment.

• 한국결정성장학회지
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• 제13권2호
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• pp.93-97
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• 2003

FALC(Field-Aided Lateral Crystallization) 공정에서 요구되는 a-Si의 결정화는 인가한 전계(electric field)의 세기와 방향에 의존한다. 본 연구에서는 유한요소법을 적용하여 실제 패턴을 간단하게 모델링한 형상에 각 물질의 전도도를 대입하고, 전안을 가해 그 결과로 발생하는 전계의 분포를 계산하였다. 전계는 (-)극 주위에서 전극의 양쪽 모서리 부근이 가운데 부분보다 더 높게 나타났고 그 방향은 전극과 50~$60^{\circ}$를 이루는 대각선 방향이었다. 또한 예상한대로 크기가 작은 패턴이 큰 패턴보다 더 큰 전계 값을 가지는 것으로 나타났다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1364-1369
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• 2005

In this paper, we have identified the mechanism of C-V hysteresis behavior often observed in pentacene organic thin-film transistors (OTFTs). The capacitance-voltage (C-V) characteristics were measured for pentacene OTFTs fabricated on glass substrates with MoW as gate/source/drain electrode and TEOS $SiO_2$ as gate insulator. The measurements were made at room temperature and elevated temperatures. From the room temperature measurements, we found that the hysteresis behavior was caused by hole injection into the gate insulator from the pentacene semiconductor for large negative gate voltages, resulting in the negative flat-band voltage shift. However electron injection was observed only at elevated temperatures

• 센서학회지
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• 제19권6호
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• pp.483-489
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• 2010

Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.

• 전기화학회지
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• 제15권1호
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• pp.19-26
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• 2012

표준 전해액에 2중량%의 VC(vinylene carbonate)와 FEC(fluoroethylene carbonate)를 각각 첨가한 전해액으로부터 흑연 음극 표면에 SEI(solid electrolyte interphase) 층을 형성시키고, SEI 특성에 따른 흑연 음극의 저온($-30^{\circ}C$) 충방전 특성을 조사하였다. 흑연의 충 방전 용량은 FEC를 첨가한 전해액, 표준 전해액, 그리고 VC를 첨가한 전해액의 순서로 감소하였고, 충 방시 발생하는 과전압은 반대경향을 보이며 증가하였다. 이는 첨가제의 종류에 따라 생성된 SEI 층의 저항과 전하전달저항에 차이가 있음을 설명하는데, 이를 SEI 층의 화학 조성과 두께를 비교하여 확인하였다. 표준 전해액으로부터 생성된 SEI 층은 C-O 성분을 포함하는 고분자 형태의 화합물과 리튬 염의 환원분해로 생성된 $Li_xPF_yO_z$ 등으로 구성되었다. VC를 포함한 전해액으로부터 생성된 SEI 층은 C-O 화합물 비율이 높고 조밀하여 리튬 염의 분해가 억제되어 얇은 피막이 생성됨에도 불구하고 가장 큰 저항 값을 보였다. 반면에 FEC로부터 생성된 SEI 층은 C-O 성분의 비율이 VC를 첨가한 전해액의 경우보다는 작으면서도 리튬 염의 분해가 크지 않아서, 리튬 이온의 이동이 가장 용이한 피막을 형성하고 있어 가장 낮은 피막저항 및 전하전달 저항을 나타내었다. 결론적으로 FEC를 첨가제로 사용한 경우 생성된 SEI 층의 저항이 가장 작아서 흑연 음극의 저온특성이 가장 우수하였다.