• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Journal of Veterinary Clinics
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• v.17 no.2
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• pp.359-367
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• 2000

The aim of this study was to evaluate the effects of propofol on cortical electroencephalogram (EEG) in seven dogs. Propofol infusion was accomplished from low concentration to high concentration in series, and each concentration was infused for 20 minutes (M0: 0, M0.5: 0.5, M1.0:1.0, and M1.5: 1.5 mg/kg/min of infusion rate). EEG was recorded via needle electrode placed at Cz, which was applied to International 10-20 system. Arterial blood pressure. blood gas analysis and ECG were also measured. Hoemodynamics, Pa$CO_2$, PaO$_2$, heart rate and respiratory rate were variable, but were net significant(p>0.05). The power spectra of EEG in every concentration was compared wish those of control (MO). The powers at a1l frequencies at M1.0 and Ml.5 were decreased. Especially, the powers of the frequencies over 20 Hz were significantly decreased (p<0.O5). Powers at frequencies between 8 and 15Hz at MO.S were significantly increased (p<0.05) in response to the painful stimuli. It was inferred that they may reflect activity of the brain which is consciously processing the external Stimuli. Like the Power spectra, al1 the band powers of He EEG ($\delta$ 1-4, $\theta$4-8, $\alpha$ 8-13, $\beta$L13-21. $\beta$H 21-30, \ulcorner 30-50, and total 1-5OHz) were decreased in proportion to the increase of infusion rate at M1 .0 and M1.5. Especially, decrease of $\beta$H and ${\gamma}$ were significant(p<0.01). At M0.5, $\alpha$ band was significantly increased(p<0.05) among all the bands. Seizure activities which were concide with occurrence of spike wave were shown in all dogs at Ml .0 and M1.5.

• Progress in Medical Physics
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• v.27 no.4
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• pp.224-231
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• 2016

The usefulness of Gel Bolus phantom was investigated by comparing the temperature distribution characteristic of the agar phantom produced to investigate the dose distribution characteristic of radiofrequency hyperthermia device with that of the Gel Bolus phantom under conditions similar to those of an agar phantom that can continuously carry out temperature measurement. The temperatures of the agar phantom and the Gel Bolus phantom were raised to $36.5{\pm}3^{\circ}C$ and a temperature sensing was inserted at depths of 5, 10, and 15 cm from the phantom central axis. The temperature increase rate and the coefficient of determination were analyzed while applying output powers of 100 W and 150 W, respectively, at intervals of 1 min for 60 min under conditions where the indoor temperature was in the range $24.5{\sim}27.5^{\circ}C$, humidity was 35~40%, internal cooling temperature of the electrode was $20^{\circ}C$, size of the upper electrode was 250 mm, and the size of the lower electrode was 250 mm. The coefficients of determination of 150 W output power at the depth point of 5 cm from the central axis of the phantom were analyzed to be 0.9946 and 0.9926 in the agar and Gel Bolus phantoms, respectively; moreover, the temperature change equation of the agar and Gel Bolus phantoms with time can be expressed as follows in the state the phantom temperature is raised to $36^{\circ}C:Y(G)$ is equation of Gel Bolus phantoms (in 5 cm depth) applying output power of 150 W. Y(G)=0.157X+36. It can be seen that if the temperature is measured in this case, the Gel Bolus phantom value can be converted to the measured value of the agar phantom. As a result of comparing the temperature distribution characteristics of the agar phantom of a human-body-equivalent material with those of the Gel Bolus phantom that can be continuously used, the usefulness of Gel Bolus phantom was exhibited.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• Journal of the Korean Electrochemical Society
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• v.13 no.4
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• pp.223-234
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• 2010

In this review, the theory and applications of the complex capacitance analysis, which can be utilized in analyzing capacitor-like electrochemical systems, were summarized. Theoretically, it was suggested that the imaginary capacitance plots (Cim vs. log f) can provide a simple way to analyze electrochemical characteristics of capacitive systems, without complicated mathematical calculations. The usefulness of the complex capacitance analysis has been demonstrated by applying it to analyze EDLC characteristics of practical porous carbon electrodes, ionic conductivities inside small pores, and ionic resistances in the catalyst layers of polymer electrolyte membrane fuel cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.176-180
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• 2006

[ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.894-897
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• 2004

Sodum bismuth titanate $(Na_{0.5}Bi_{0.5}TiO_3$ or NBT) thin films coated on the $LaNiO_3$ (LNO) electrode by sol-gel methode and rapid thermal annealing (RTA) technique. The NBT (NBT/LNO/Si) thin films examined by x-ray diffraction (XRD). The orientation of NBT was observed for films coated at $900^{\circ}C$, 5 min and $600^{\circ}C$, 60 min. Filed emission scanning electron microscopy (FE-SEM) showed uniform surface composed of grains. The grain size of NBT thin films increased with increasing annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.297-297
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• 2010

Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.