• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Applied Microscopy
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• v.34 no.2
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• pp.95-102
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• 2004

The TEM samples prepared by ion milling have the advantage that thin area can be obtained from almost any materials. However, it has the disadvantage that the amount of thin area can often be quite limited. For the cross-sectioned samples and grossly heterogeneous materials, the thickness of less than $0.1{\mu}m$ can be achieved by mechanical grinding and polishing (tripod polisher) and then the TEM samples may be ion-milled for final thinning or cleaning. These approaches were described in this paper. Examples of TEM observations were taken from cross-section samples of thin films on silicon and sapphire, from diffusion layers between $Mo_5Si_3\;and\;Mo_2B$, and from rapidly solidified 304 stainless steel powders embedded in electroplated copper.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1020-1023
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• 2002

We successfully developed a-Si TFT controlled active matrix cathode (AMC) with gated Mo emitters. Also, we could remove emitter failures of the AMC through a novel surface treatment of Mo-tips, which indicates reduction of $MoO_3$ or chemical wet etching of $MoO_3$ by surface treatment. Transient behaviors of the AMC are strongly dependent on not only DC characteristics of device but also the device structure. Brightness and gray scale were well realized by low-voltage scan and data signals addressed to a-Si TFTs.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.127-134
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• 1996

The thermal residual stresses were estimated for brazed Si3N4/S.S.316 joints with Cu/Mo multi-interlayers using FEM, and their bending strengths at room temperature were measured for various interlayer configura-tions. The Cu, Mo multi-interlayer decreased the maximum residual stress in Si3N4 and caused the residual stress redistribution rsulting in the high residual stress at Mo interlayer. The stress distribution in the joints as well as the maximum residual stress in silicon nitride were found to be main factors for determining bending strengths and Weibull modulous of the joints. The bending strength of the brazed Si3N4/S.S.316 joints with specific Cu, Mo multi-interlayer system were found to be above 400 MPa.

• Bulletin of the Korean Chemical Society
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• v.5 no.2
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• pp.65-68
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• 1984

Reactions of $MoOCl_5^{2-}$ with $[PW_{11}O_{39}]^{7-}\;and\;[SiW_{11}O_{39}]^{8-}$ have been studied spectrophotometrically and several transient complexes have been discovered. Transient species initially formed are probably $[Mo_2O_4(PW_{11}O_{39})_2]^{12-}\;and\;[Mo_2O_4(SiW_{11}O_{39})_2]^{14-}$. Spectra change gradually, indicating formation of transient isomers of $[PMoW_{11}O_{40}]^{4-}\;and\;[SiMoW_{11}O_{40}]^{5-}$, which again transform into the stable isomers. The transient isomers absorb light much more strongly than the stable isomers in the visible range.

• Nuclear Engineering and Technology
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• v.46 no.2
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• pp.147-158
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• 2014

In order to investigate how the microstructure of fuel/matrix-interaction (FMI) layers change during irradiation, different U-7Mo dispersion fuel plates have been irradiated to high fission density and then characterized using scanning electron microscopy (SEM). Specifially, samples from irradiated U-7Mo dispersion fuel elements with pure Al, Al-2Si and AA4043 (~4.5 wt.%Si) matrices were SEM characterized using polished samples and samples that were prepared with a focused ion beam (FIB). Features not observable for the polished samples could be captured in SEM images taken of the FIB samples. For the Al matrix sample, a relatively large FMI layer develops, with enrichment of Xe at the FMI layer/Al matrix interface and evidence of debonding. Overall, a significant penetration of Si from the FMI layer into the U-7Mo fuel was observed for samples with Si in the Al matrix, which resulted in a change of the size (larger) and shape (round) of the fission gas bubbles. Additionally, solid fission product phases were observed to nucleate and grow within these bubbles. These changes in the localized regions of the microstructure of the U-7Mo may contribute to changes observed in the macroscopic swelling of fuel plates with Al-Si matrices.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.386-391
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• 2017

Two kinds of steels whose compositions were Fe-34.4Cr-14.5Ni-2.5Mo-0.4W-0.4Mn-0.5Si-(0.009 or 0.35)S (wt.%) were centrifugally cast, and oxidized at $900^{\circ}C$ for 50-350 h in order to find the effect of sulfur on the high-temperature oxidation of Fe-34.4Cr-14.5Ni-2.5Mo-0.4W-0.4Mn-0.5Si-(0.009 or 0.35)S (wt.%) alloys. These alloys formed oxide scales that consisted primarily of $Cr_2O_3$ as the major oxide and $Cr_2MnO_4$ as the minor one through preferential oxidation of Cr and Mn. They additionally formed $SiO_2$ particles around the scale/alloy interface as well as inside the matrices. The high affinity of Mn with S led to the formation of scattered MnS inclusions particularly in the 0.35S-containing cast alloy. Sulfur was harmful to the oxidation resistance, because it deteriorated the scale/alloy adherence so as to accerelate the adherence and compactness of the formed scales.

• Journal of Technologic Dentistry
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• v.36 no.3
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• pp.141-147
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• 2014

Purpose: Dental casting #Gr I (Co-25Cr-5Mo-3Sn-1Mn-1Si), #Gr II (Co-25Cr-5Mo-5Cu-1Mn -1Si) and #Gr III (Co-25Cr-5Mo-3Sn-5Cu-1Mn-1Si) master alloys of granule type were manufactured the same as manufacturing processes for dental casting Ni-Cr and Co-Cr-Mo based alloys of ingot type. These alloys were analyzed melting processes with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer. Methods: These alloys were manufactured such as; alloy design, the first master alloy manufatured using vacuum arc casting machine, melting metal setting in crucible, melting in VIM, pouring in the mold of bar type, cutting the gate and runner bar and polishing. These alloys were put about 30g/charge in the ceramic crucible of high frequency induction centrifugal casting machine and heat, Infrared thermal image analyzer indicated alloys in the crucible were set and operated. Results: The melting temperatures of these alloys measuring infrared thermal image analyzer were decreased in comparison with remanium$^{(R)}$ GM 800+, vera PDI$^{TM}$, Biosil$^{(R)}$ f, WISIL$^{(R)}$ M type V, Ticonium 2000 alloys of ingot type and vera PDS$^{TM}$(Aabadent, USA), Regalloy alloys of shot type. Conclusion: Co-Cr-Mo based alloy in addition to Sn(#Gr I alloy) were decreased the melting temperature with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.810-816
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• 2009

The interactions between four Keggin-type POMs (${SiW_{12}O_{40}}^{4-},\;{PW_{12}O_{40}}^{3-},\;{SiMo_{12}O_{40}}^{4-},\;and\;{PMo_{12}O_{40}}^{3-}$) and glassy carbon (GC) and highly oriented pyrolytic graphite (HOPG) surfaces are investigated in a systematic way. Electrochemical results show that molibdate series POMs adsorb relatively stronger than tungstate POMs on GC and HOPG surfaces. Adsorption of POMs on HOPG electrode surfaces is relatively stronger than on GC surfaces. ${SiMo_{12}O_{40}}^{4-}$ species exhibits unique adsorption behaviors on HOPG surfaces. Surface-confined ${SiMo_{12}O_{40}}^{4-}$ species on HOPG surfaces exhibit unique adsorption behaviors and inhibit the electron transfer from the solution phase species. The catalytic activity of the surface-confined POMs for hydrogen peroxide electroreduction is also examined, where ${PW_{12}O_{40}}^{3-}$ species adsorbed on GC surfaces exhibits the highest catalytic efficiency among the investigated POM modified electrode systems.