• Transactions of the Korean hydrogen and new energy society
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• v.29 no.2
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• pp.170-180
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• 2018

After $MoS_2$ catalyst was prepared at 1, 30, and 70 atm, the hydrothermal pressure effect over preparation of $MoS_2$ was investigated in terms of catalyst characterization and direct methanation. Multifaceted characterization techniques such as XRD, BET, SEM, TPR, EDS, and XPS were used to analyze and investigate the effect of high pressure over the preparation of surface and bulk $MoS_2$ catalyst. Result from XRD, SEM, and BET demonstrated that $MoS_2$ was more dispersed as preparation pressure was increased, which resulted finer $MoS_2$ crystal size and higher surface area. EDS result confirmed that bulk composition was $MoS_2$ and XPS result showed that S/Mo mole ratio of surface was about 1.3. TPR showed that $MoS_2$ prepared at 30 atm possessed higher active surface sites than $MoS_2$ prepared at 1 atm and these sites could contribute to higher CO yield during methanation. Direct methanation was used to evaluate the CO conversion of the both catalysts prepared at 1 atm and 30 atm and reaction condition was at feed mole ratio of $H_2/CO=1$, GHSV=4800, 30 atm, temperature($^{\circ}C$) of 300, 350, 400, and 450. $MoS_2$ prepared at 30 atm showed more stable and higher CO conversion than $MoS_2$ prepared at 1 atm. Faster deactivation was occurred over $MoS_2$ prepared at 1 atm, which indicated that preparation pressure of $MoS_2$ catalyst was the dominant factor to improve the yield of direct methanation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.368-368
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• 2011

최근에 보고된 양질의 고효율Cu(In,Ga)Se2 (CIGS) 태양전지는 CIGS광흡수층이 강한 (220:204) 우선배향성을 갖는 것으로 알려져 있다 [1]. 이러한 CIGS우선배향성은 Se 증착압력, Na농도, 기판온도 및 Mo후면전극의 표면상태에 영향을 받는 것으로 알려져 있지만 정확한 상호관계는 아직 명확히 알려져 있지 않으며, 특히 Mo후면전극의 영향에 대해서는 체계적인 연구결과조차 극히 드문 상황이다 [2]. 본 연구에서는 CIGS 박막의 우선배향성에 대해 Mo후면전극의 미세구조가 미치는 영향 및 이에 따른 cell특성의 변화에 대해서 연구하였다. Mo후면전극의 미세구조는 2 mTorr~16 mTorr까지 증착압력을 변화시켜 제어되었고, CIGS광흡수층은 이렇게 준비된 Mo후면전극상에 3단계 동시증밥법(3-stage process)을 사용하여 형성하였다. XRD를 통한 박막의 우선배향성 평가에서, Mo 증착압력에 대한 IGS I(300)/I(006) 및 CIGS I(220:204)/I(112)의 거동은 Mo 미세구조와 밀접한 관련이 있는 잔류응력(residual stress)의 변화 거동과 상당히 일치함을 보였다. 이에 반해, 높은 압력의 Mo위에 형성된 강한 (220:204) 우선배향성의 CIGS와 bare-glass위에서 형성된 강한 (112) 우선배향성의 CIGS내 Na농도는 서로 유사하였다. 상기의 결과는 Mo미세구조 그 자체가 CIGS 박막 우선배향성의 원인이 됨을 나타낸다. Selenized Mo시편의 XRD분석 및 IGS/Mo 시편의 TEM분석결과을 통해 MoSe2의 반응성이 잔류응력과 비례하는 Mo in-gain 밀도에 의존하는 함을 알 수 있었고, 이러한 MoSe2반응성(reactivity)과 IGS우선배향성 사이에 상당히 밀접한 관련이 있으며 이에 CIGS의 우선배향성이 결정됨을 확인하였다. 마지막으로, Mo변수에 의해 제작된 cell의 특성분석으로부터 cell의 효율이 주로 VOC의 증가에 기인하여 CIGS (220:204) 우선배향성의 정도에 비례하였다.

• Nano
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• v.13 no.12
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• pp.1850144.1-1850144.13
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• 2018

A nano-$MoS_2$/montmorillonite K-10 (K10) composite was prepared and characterized. The composite contains two types of 2H-$MoS_2$ nanoparticles. One is the hollow spherical $MoS_2$ with a size range of 75 nm, and the other is the spherical nano cluster of $MoS_2$ with a size range of 30 nm. The two kinds of nano-$MoS_2$ were formed via assembly of numerous $MoS_2$ nano-platelets with a size of ~10 nm. A tribological comparison was then made among nano-$MoS_2$/K10, K10, nano-$MoS_2$ and a mechanical mixture of K10 and nano-$MoS_2$. K10 reduced the wear but slightly increased the friction. Nano-$MoS_2$ remarkably reduced both friction and wear. The mechanical mixture demonstrated better wear resistance than nano-$MoS_2$, indicating a synergistic anti-wear effect of nano-$MoS_2$ and K10. The synergistic effect was reinforced using nano-$MoS_2$/K10 instead of the mechanical mixture. A part of the $MoS_2$ in the contact region always lubricated the friction pair, and the rest formed a tribofilm. K10 segregated the friction pair to alleviate the ablation wear but magnified the abrasive wear. S-$MoS_2$ protects K10 and they together function as both a lubricant and an isolating agent to reduce the ablation and abrasive wear.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.200-200
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• 2004

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.507-514
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• 1993

The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.15-18
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• 2001

The Mo/si multilayer for EUV lithography was deposited using magnetron sputtering system. The multilayers were characterized using the cross-sectional transmission electron microscope (TEM) and low/high angle X-ray diffraction (XRD). The microstructure of Mo and Si was highly textured structure and amorphous, respectively. The well-defined low angle XRD peaks implies a well-defined multilayer structure. The interfacial layer of Mo-on-Si was thicker than Si-on-Mo interfacial layer.

• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.258-262
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• 2009

The composition and semiconducting properties of the passive films formed on Ni- (15, 30)Cr-5Mo alloys in pH 8.5 buffer solution were examined. The depth concentration profile of passive films formed on Ni-(15, 30)Cr-5Mo in pH 8.5 buffer solution showed that Mo enhances the enrichment of Cr. The Mott-Schottky plot for the passive film on Ni-(15, 30)Cr- 5Mo closely resembled that for the film on Cr, whereas those for the less Cr-enriched film on Mo-free alloys showed similar behavior to that for the film on Ni. The acceptor density was reduced by increasing Cr content in Ni-(15, 30)Cr-(0, 5)Mo alloys, but addition of Mo considerably increased the acceptor density.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.749-756
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• 1998

TiC-Ni and TiC-Ni-Mo cermet powders were produced by Self-propagating High temperature Synthesis (SHS) process. The cooling rate of synthesized powders were controlled by using the V-shaped copper jig and the carbide size decreased with increasing the cooling rate I. e decreasing the width of copper jig Round shape carbide particles were produced after SHS reaction in TiC-Ni as well as TiC-Ni-Mo powders. Local segregation of Mo rich phases was observed in SHS powder of TiC-Ni-Mo and the uneven dis-triobution of Mo promoted the faster growth rate of carbide particles during sintering compared to the same composition specimen with commercial TiC powder. Howogeneous microstructure of TiC-Ni-Mo cermet was obtained when the elemental Mo powder was mixed with the SHS powder of TiC-Ni.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.1
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• pp.73-78
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• 2009

투과 전자 현미경(TEM)을 사용하여 소성 후 Pt와 $MoO_3$ 표면 위에 $MoO_x$ 박막층이 형성되는 것을 조사하였다. 연속된 CO 화학 흡착법에 의하여 표면된 노출된 Pt 표면적의 변화를 관찰하였으며, XPS 분석으로 부터 Pt 표면에 형성된 $MoO_x$ 박막층 두께는 소성 온도 증가에 따라 증가하는 것으로 측정되었다. 소성 과정은 Pt와 $MoO_3$ 간에 개선된 접촉을 유도하였으며, Pt/$MoO_3$ 촉매에서 수소전이현상을 조절하는 것으로 나타난다.

• Journal of the Korean Chemical Society
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• v.14 no.2
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• pp.141-145
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• 1970

The reduction of Mo-thiocyanate (V) complex on dropping mercury electrode has been studied at ionic strength 0.6 with pH less than 2.3. D-C polarogram obtained from acidic solutions are reversible, diffusion controlled current. The electrode reaction of Mo-thiocyanate(V) may be represented as follows. $MoO(SCN)_3\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;H_2O\;+\;SCN^-$From this reaction, the half wave potential assumed to be $E_{1/2}\;=\;E_0'\;-\;0.059\;pH\;-\;0.03\;log{\;frac{[Mo(SCN)_2{^+}][SCN^-]}{[MoO(SCN)_3]}}$Considering the dissociation of this complex, however, it was estimated that the electrode reaction may be written by. $MoO^{+3}\;+\;3SCN^-\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;SCN^-\;+\;H_2O$.