• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
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• pp.121-121
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• 2016

• 한국자기학회지
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• 제17권1호
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• pp.1-5
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• 2007

Rutile 구조를 가진 반강자성체 $MnF_2$와 단결정 $MnF_2(1.5%\;EuF_3)$의 Infra-Red 흡수 스펙트럼과 Photoluminescence 측정을 했다. 측정된 Data의 분석을 통해서 $EuF_3$가 1.5% 첨가된 $MnF_2$와 순수한 $MnF_2$의 광학적 성질의 차이를 밝혀내고, Eu의 첨가에 의해 나오는 PL은 $Eu^{3+}$의 f-d 전이에 의한 것임을 확인했다.

• 한국세라믹학회지
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• 제34권7호
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• pp.703-712
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• 1997

The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$\times$106 respectively.

• 한국자기학회지
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• 제16권5호
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• pp.261-263
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• 2006

Rutile 구조를 가진 반강자성체 $MnF_2$내에서 Eu의 자기적 성질을 알아내기 위해 단결정 $MnF_2$(1.5% $EuF_3$)의 자기 감수율을 $4{\sim}300K$사이의 온도 구간에서 측정했다. 측정된 자기 감수율의 분석을 통해서 $EuF_3$의 첨가로 추가되는 자기 감수율 역시 $MnF_2$와 마찬가지로 상자성 큐리 온도가 -값을 가지는 반강자성 Curie-Weiss 법칙을 만족하는 것을 확인했다. 또한 Eu의 경우 +3가를 띄고 있는 것을 확인하여 기존의 일치되지 않는 연구들의 문제점을 해결했다.

• 한국세라믹학회지
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• 제41권1호
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• pp.92-95
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• 2004

Micro-Pulling Down (${\mu}$-PD) 법을 이용하여 $MnO_2$와 $Tb_4O_7$를 첨가하여 crack. 열 strain 등의 결함이 없는 화학양론조성의 $LiNbO_3$ 단결정을 c-축으로 직경 1.0mm, 길이 25-30mm의 크기로 성장시켰다. Electron Probe Micro Analysis (EPMA)를 이용하여 결정 내에 $MnO_2$와 $Tb_4O_7$이 균일하게 분포되어 있음을 확인하였다. 또한 Fourier Transform-Infrared Spectrophotometer (FT-IR)을 사용하여 OH 흡수밴드를 관찰하였고, 성장된 결정의 $MnO_2$와 $Tb_4O_7$ 첨가에 따른 형광특성의 변화를 측정하였다.

• 한국재료학회지
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• 제17권4호
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• pp.203-206
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• 2007

Effects of doping rare earth elements on Ln site of $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln = N d, Sm and La) were examined from structure, magnetic and electrical properties. Size of a-axis increased as following order of La < Nd < Sm, whereas c-axis was not much changed. Curie temperatures of 170 K for $Nd_{0.7}Ca_{0.3}MnO_3$, 110 K for $Sm_{0.7}Ca_{0.3}MnO_3$ and 250 K for $La_{0.7}Ca_{0.3}MnO_3$ were obtained. This result coincides with change of Mn-O bond length causing by a-axis lattice constant. The highest magnetroresistance ratios were 22% at 77 K for $Sm_{0.7}Ca_{0.3}MnO_3$, 32% at 110 K for $Nd_{0.7}Ca_{0.3}MnO_3$, and 33% at 180 K for $La_{0.7}Ca_{0.3}MnO_3$.

• Bulletin of the Korean Chemical Society
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• 제15권12호
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• pp.1058-1064
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• 1994

Mn/In$_2O_3$ systems with a variety of Mn mol${\%}$ were prepared to investigate the effect of Mn-addition on the catalytic activity of Mn/In$_2O_3$ in the oxidative coupling of methane. The oxidative coupling of methane was examined on pure In$_2O_3$ and Mn/In$_2O_3$ catalysts by cofeeding gaseous methane and oxygen under atmospheric pressure between 650 and 830 $^{\circ}C$. Although pure In$_2O_3$ showed no C$_2$ selectivity, both the C$_2$ yield and the C$_2$ selectivity were increased by Mn-doping. The 5.1 mol${\%}$ Mn-doped In$_2O_3$ catalyst showed the best C$_2$ yield of 2.6${\%}$ with a selectivity of 19.1${\%}$. The electrical conductivities of pure and Mn-doped In$_2O_3$ systems were measured in the temperature range of 25 to 100 $^{\circ}C$ at PO$_2$'S of 1 ${\times}$ 10$^{-7}$ to 1 ${\times}$ 10 $^{-1}$ atm. The electrical conductivities were decreased with increasing Mn mol${\%}$ and PO$_2$, indicating the specimens to be n-type semiconductors. Electrons serve as the carriers and manganese can act as an electron acceptor in the specimens. Manganese ions doped in In$_2O_3$ inhibit the ionization of neutral interstitial indium or the transfer of lattice indium to interstitial sites and increase the formation of oxygen vacancy, giving rise to the increase of the concentration of active oxygen ion on the surface. It is suggested that the active oxygen species adsorbed on oxygen vacancies are responsible for the activation of methane.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1517-1519
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• 1999

FED용 형광체로 사용되는 $ZnGa_2O_4$를 Glycine Nitrate Process로 합성하여 고상 반응법으로 합성한 $ZnGa_2O_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 $ZnGa_2O_4$의 경우약 $300^{\circ}C$이상에서 무게감량이 없으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GP(Glycine Nitrate Process)로 제조된 $ZnGa_2O_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.52-55
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• 2009

A red phosphor, $(Sr,Ca)_2P_2O_7:Eu^{2+},Mn^{2+}$, for UV-LED was synthesized under a reducing atmosphere, and its luminescent properties were investigated. The phosphor absorbs ultraviolet light at around 400 nm and efficiently emits red light at approximately 610 nm through an energy transfer from $Eu^{2+}$ to $Mn^{2+}$. Using the varied input current test for the phosphor-loaded LED lamps, it was found that the luminescent efficiency of the phosphor decreased with increasing light flux. This might be due to an increased probability of excited-state absorption and the consequent non-radiative relaxation in $Mn^{2+}$ ions in the condition of high photon influx.