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http://dx.doi.org/10.3740/MRSK.2007.17.4.203

Magnetic and Electrical Properties of Ln0.7Ca0.3MnO3 (Ln = Nd, Sm, La)  

Chon, Gom-Bai (School of Nano and Advanced Materials Engineering, Changwon National University)
Im, Hung-Su (School of Nano and Advanced Materials Engineering, Changwon National University)
Lee, Chan-Gyu (School of Nano and Advanced Materials Engineering, Changwon National University)
Koo, Bon-Heun (School of Nano and Advanced Materials Engineering, Changwon National University)
Lee, Sang-Min (School of Nano and Advanced Materials Engineering, Changwon National University)
Jung, Myung-Hwa (Material Research Team, Korea Basic Science Institute)
Jo, Young-Hun (Material Research Team, Korea Basic Science Institute)
Publication Information
Korean Journal of Materials Research / v.17, no.4, 2007 , pp. 203-206 More about this Journal
Abstract
Effects of doping rare earth elements on Ln site of $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln = N d, Sm and La) were examined from structure, magnetic and electrical properties. Size of a-axis increased as following order of La < Nd < Sm, whereas c-axis was not much changed. Curie temperatures of 170 K for $Nd_{0.7}Ca_{0.3}MnO_3$, 110 K for $Sm_{0.7}Ca_{0.3}MnO_3$ and 250 K for $La_{0.7}Ca_{0.3}MnO_3$ were obtained. This result coincides with change of Mn-O bond length causing by a-axis lattice constant. The highest magnetroresistance ratios were 22% at 77 K for $Sm_{0.7}Ca_{0.3}MnO_3$, 32% at 110 K for $Nd_{0.7}Ca_{0.3}MnO_3$, and 33% at 180 K for $La_{0.7}Ca_{0.3}MnO_3$.
Keywords
Colossal Magnetroresistance(CMR); $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln = Nd, Sm, La); Tc; MR ratio; lattice change;
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1 W. Archibald, J. -S. Zhou and J. B. Goodenough, Phys. Rev. B, 53, 14445 (1996)   DOI   ScienceOn
2 J. M. D. Teresa, M. R. Ibarra, J. Garcia, J. Blasco, C. Ritter, P. A. Algarabel, C. Marquina and A. del Moral, Phys. Rev. Lett., 76, 3392 (1996)   DOI   ScienceOn
3 C. S. Kim, I. B. Shin, H. S. Lee, C. S. Kim, New Phys., 29, 772 (1989)
4 Min Seok Song, Sang Il Seo Nam Hee Cho and Jae Yeoul Lee, Journal of Korean Institute of Electrical and Electronic Material Engineers, 12(11), 1040 (1999)
5 P. G. Radaelli, M. Marezio, H. Y. Hwang, S-W. Cheong and B. Batlogg, Phys. Rev. B, 54, 8992 (1996)   DOI   ScienceOn
6 G. B. Chon, B. H. Koo and C. G. Lee, Korean Journal of aterials Research, 16 (1), 44 (2006)   과학기술학회마을   DOI
7 P. Shuk, L. Tichonova and U. Guth, Solid state Ionics, 68, 177 (1994)   DOI   ScienceOn
8 R. Mahendiran, S. K. Tiwary, A. K. Raychaudhuri, T. V. Ramakrishnan, R. Mahesh, N. Rangavittal and C. N. R. Rao, phys. Rev. B, 53(6), 3348 (1996)   DOI   ScienceOn
9 J. M De Teresa, M. R. Ibarra, P. A. Algarabel, C. Ritter, C. Marquina, J. Blasco, J. Garcia, A. del Moral and Z. Arnold, Nature, 386, 256 (1997)   DOI   ScienceOn
10 M. Prester, Phys. Rev. B, 54, 606 (1996)   DOI   ScienceOn
11 A. I. Abramovich, L. I. Koroleva, A. V. Michurin, O. Yu. Gorbenko and A. R. Kaul, Physica B, 293, 38 (2000)   DOI   ScienceOn
12 X. B. Zhu, S. M. Liu, Z.G. Sheng, B. C. Zhao, W. J. Lu, W. H. Song, J. M. Dai and Y. P. Sun, Physica B, 369, 299 (2005)   DOI   ScienceOn
13 T. Yotsuya, Jpn. J. Appl. Phys., 35, L23 (1996)   DOI   ScienceOn
14 A. J. Millis, P. B. Littlewood and B. I. Shraiman, Phys. Rev. Lett., 74, 5144 (1995)   DOI   ScienceOn
15 S. Jin, T. H. Tiefel, M. McCormark, R. A. Fastnacht, R. A. Fastnacht, R. Ramesh and L. H. Chen, Science, 264, 413 (1994)   DOI   ScienceOn
16 A. J. Millis, B. I. Shraiman and R. Mueller, Phys. Rev. Lett., 77, 175 (1966)   DOI   ScienceOn
17 C. Zener, Phys. Rev., 81, 440 (1951)   DOI
18 C. Zener, Phys. Rev., 82(3), 403 (1951)   DOI
19 Y. H. Li, K. A. Thomas, P. S. I. P. N. de Silva, L. F. Chohen, A. Goyal, T. Venkatesam and J. L. MacManus-Driscoll, J. Mater. Res., 13(8), 2161 (1998)   DOI   ScienceOn
20 J. H. van Santen and G. H. Jonker, Physica, 16, 49(1954)