• 제목/요약/키워드: Mn doping

검색결과 168건 처리시간 0.029초

분무 열 분해법을 이용한 Zn2SiO4 : Mn 나노 형광체의 광학적 특성에 관한 연구 (Synthesis of Zn2SiO4 : Mn Phosphor Particles by Spray-pyrolysis Method)

  • 남상훈;김명화;이상덕;부진효
    • 한국진공학회지
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    • 제19권1호
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    • pp.66-71
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    • 2010
  • PDP를 비롯한 형광체를 이용하는 디스플레이 분야에서 현재 마이크로미터($\mu}$-meter) 이상의 크기를 갖는 기존의 벌크(bulk) 형광체를 능가하는 성능과 새로운 물성을 나타내는 나노형광체(nanophosphor) 개발 및 응용에 대한 연구가 절대적으로 필요한 시점이다. 따라서 본 실험에서는 나노 사이즈의 평균 입자 크기를 갖는 구형의 $Zn_2SiO_4:Mn$ 형광체 입자를 초음파 분무열 분해(ultrasonic spray pyrolysis) 방법을 이용하여 합성하였다. 구형의 형광체 입자의 크기는 분무 장치의 droplet separator를 도입하여 조절하였다. 2 mol%의 망간을 도핑하여 합성한 $Zn_2SiO_4:Mn$ 입자는 시간이 지남에 따라 감소되고, 최근에 고상에서 합성하여 상용화된 물질에 비교할 수 있을 만한 빛 방출의 세기를 가졌다. 형광체 입자의 크기는 무기질 염의 농도가 0에서 5 M로 증가함에 따라 $1\;{\mu}m$에서 $0.2\;{\mu}m$로 감소하였다. 0.5 M 이상의 농도의 전구체 용액에서 얻어진 형광체 입자의 빛 방출은 상용화되어 있는 물질과의 비교를 통해 알아보았다.

초음파 진동자용 MnO2가 Doping된 PZT-PSN 세라믹스의 구조 및 압전 특성 (Structural and Piezoelectric Properties of MnO2-Doped PZT-PSN Ceramics for Ultrasonic Vibrator)

  • 차유정;김창일;김경준;정영훈;이영진;이해근;백종후
    • 한국재료학회지
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    • 제19권4호
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    • pp.198-202
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    • 2009
  • For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

Sb/Bi비가 ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 바리스터의 소결과 입계 특성에 미치는 영향 (Effect of Sb/Bi Ratio on Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국전기전자재료학회논문지
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    • 제25권11호
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    • pp.878-885
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    • 2012
  • In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

$La_2O_3$가 첨가된 modified PZT계의 제조 및 특성 (Fabrication and characteristics of modified PZT System doped With $La_2O_3$)

  • 황학인;박준식;오근호
    • 한국결정성장학회지
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    • 제7권3호
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    • pp.418-427
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    • 1997
  • $La_2O_3$가 각각 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% 첨가된 $0.05pb(Sn_{0.5}Sb_{0.5})O_3+0.11PbTiO_30.84PbZroO_3+0.4Wt%MnO_2$ (이하 0.05PSS -0.11PT-0.84PZ+0.4wt%$MnO_2$)계를, $1250^{\circ}C$에서 $PbZrO_3$를 분위기 분말로 사용하여 성형체 무게의 1/2을 함께 넣고 소결체를 제조하여 그 특성을 분석하였다. 소결체의 밀도는 7.683 g/$\textrm {cm}^3$에서 7.515 g/$\textrm {cm}^3$ 범위였으며, 3 mole% $La_2O_3$를 첨가한 경우 가장 높은 값을 나타내었다. 0에서 5 mole% 범위에서 $La_2O_3$ 첨가량을 증가시킬 때 평균 입경이 9.0 $\mu \textrm{m}$에서 1.3 $\mu\textrm{m}$까지 감소되었다. 결정구조의 경우 $La_2O_3$첨가량을 0에서 1 mole%로 할 때 0.05PSS-0.11 PT-0,84PZ계에서 고용된 상을 형성하였으나 3, 5 mole%로 첨가량을 증가시킴에 따라 제2차 산이 형성되었고, 소결체를 $120^{\circ}C$ 또는 $140^{\circ}C$에서 $5 KV_{DC}$ /mm로 20분간 poling 전후에 $La_2O_3$ 첨가량이 0 에서 3 mlole%까지 증가될수록 1KHz에서의 유전 상수는 증가되었으며, 유전손실은 모든 경우에서 1 % 미만의 값을 나타내었다. $La_2$O$_3$첨가량이 0, 0.5, 1, 3 mole%로 증가됨에 따라 큐리온도가 208$^{\circ}C$, 183$^{\circ}C$, $152^{\circ}C$ 그리고 $127^{\circ}C$로 감소되었다. $La_2O_3$가 증가됨에 따라 대체로 $K_{p}$ 증가되었으며 0.7 mlole%의 $La_2O_3$를 첨가한 소결체를 $140^{\circ}C$에서 poling한 경우 가장 높은 $K_p$값으로 14.5 %를 나타내었다.

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메탄 활성화반응에서 산화칼슘 촉매의 활성에 대한 망간과 칼륨의 첨가효과 (Effects of Mn- and K-addition on Catalytic Activity of Calcium Oxide for Methane Activation)

  • 박종식;공장일;전종호;이성한
    • 대한화학회지
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    • 제42권6호
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    • pp.618-628
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    • 1998
  • 순수한 CaO, Mn-doped CaO, Mn/CaO, K/CaO 촉매를 제조하고 이들의 메탄 활성화반응에 대한 촉매활성을 600∼800$^{\circ}C$ 온도영역에서 실험하여 산화칼슘의 촉매활성에 대한 망간과 칼륨의 첨가효과를 조사하였다. 촉매의 특성을 조사하기 위하여 X-선 분말회절분석(XRD), X-선 광전자분석(XPS), 주사전자현미경분석(SEM), 시차열분석(DSC) 및 열무게분석(TG)을 실시하였다. 촉매반응은 직결 기체크로마토그래피를 이용한 단방향 흐름 반응기로서 이루어졌다. 표준반응조건은 $p(CH_4)/p(O_2)=250$ Torr/50 Torr이며 반응기체의 주입속도는 30mL/min, 그리고 He 희석기체와 함께 전체압력은 1 atm이였다. 실험한 촉매들 중에서 6.3 mol% Mn-doped CaO 촉매가 가장 우수한 $C_2$ 선택성을 보였으며 775$^{\circ}C$에서 $C_2$ 선택성과 $C_2$ 수율이 각각 43.2%와 8.0% 이었다. 적은 양의 망간을 도프한 산화칼슘 촉매들은 망간의 양이 증가함에 따라 $C_2$ 선택성이 향상되는 경향을 보였으나 많은 양의 망간([Mn]>6.3 mol%)을 도프한 촉매에서는 $C_2$ 선택성이 감소하는 경향을 보였다. 금속이온이 도프되지 않은 6 wt.% Mn/CaO와 6 wt.% K/CaO 촉매는 700$^{\circ}C$에서 각각 13.2%와 30.9%의 $C_2$ 선택성을 보여 담지효과는 Mn보다도 K가 훨씬 우수함을 보였다. CaO와 Mn-doped CaO 촉매의 전기전도도를 $10^{-3}∼10^{-1}\;atm$의 산소분압 영역에서 측정한 결과 모두 p형의 전기적 특성을 보였으며 도프한 망간의 농도가 증가함에 다라 전기전도도는 감소하는 경향을 보였다. 촉매표면에 생성된 틈새형 산소이온이 메탄을 활성화할 수 있음을 제안하였고 틈새형 사소이온의 생성을 고체화학적 관점에서 논의하였다.

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Ellipsometric study of Mn-doped $Bi_4Ti_3O_{12}$ thin films

  • Yoon, Jae-Jin;Ghong, Tae-Ho;Jung, Yong-Woo;Kim, Young-Dong;Seong, Tae-Geun;Kang, Lee-Seung;Nahm, Sahn
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.173-173
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    • 2010
  • $Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

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Electrical Transport Properties and Magnetoresistance of (1-x)La0.7Sr0.3MnO3/xZnFe2O4 Composites

  • Seo, Yong-Jun;Kim, Geun-Woo;Sung, Chang-Hoon;Lee, Chan-Gyu;Koo, Bon-Heun
    • 한국재료학회지
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    • 제20권3호
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    • pp.137-141
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    • 2010
  • The $(1-x)La_{0.7}Sr_{0.3}MnO_3(LSMO)/xZnFe_2O_4$(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

Long-term Testing and Analysis of a ScSZ/LaSrCuFe Cell

  • Wackerl, Jurgen;Peck, Dong-Hyun;Markus, Torsten
    • 한국세라믹학회지
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    • 제45권12호
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    • pp.788-795
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    • 2008
  • An electrolyte supported SOFC cell was tested at $800^{\circ}C$ in air for 3600 h with an applied current density of $200\;mA/cm^2$ to examine possible cathode degradation issues. A scandium- stabilized zirconia (ScSZ) with additional manganese doping (ScSZ: Mn) was used as electrolyte. A strontium and copper-doped lanthanum ferrite (LaSrCuFe) and platinum were used as cathode and quasi-anode material, respectively. The DC resistance was logged over the complete testing period. Additionally, impedance spectroscopy was used from time to time to track changes of the cell in-situ. Post-test analysis of the cell using methods like scanning electron microscopy imaging and other electrochemical testing methods allow the identification of different degradation sources. The results indicate a promising combination of electrolyte and cathode material in terms of chemical compatibility and electrical performance.

$BaTiO_3$계 박막의 소결온도에 따른 미세구조와 전기적 특성 (Electrical Characteristics and Microstructure of Thin Films $BaTiO_3$ depending on The Sintering Temperature)

  • 김덕규;전장배;박춘배;송민종;강용철;박해암;소병문;김태완;강도열
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1573-1576
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    • 1997
  • Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

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THERMAL SATABILITY AND MAGNETORESISTANCE OF TOP SPIN VALVE WITH SYNTHETIC ANTIFERROMAGNET CoFe/Ru/CoFe/IrMn

  • J. Y. Hwang;Kim, M. Y.;K. I. Jun;J. R. Rhee;Lee, S. S.;D. G. Hwang;S. C. Yu;Lee, S. H.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.64-65
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    • 2002
  • Recently the synthetic antiferromagnetic layer (SAF) has received much attention because it replaces the pinned layer of the conventional spin valve (CSV) sensors and its overall performance [1], The spin valve (SV) with SAF has the from buffer/F/Cu/APl/Ru/AP2/AF, where F is the soft ferromagnetic layer (typically NiFe with CoFe interfacial doping), AP1 and AP2 are two ferromagnetic layers (typically CoFe alloys) antiferromagnetically coupled through a thin Ru layer. (omitted)

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