• Title/Summary/Keyword: Mn Doping

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Synthesis of Zn2SiO4 : Mn Phosphor Particles by Spray-pyrolysis Method (분무 열 분해법을 이용한 Zn2SiO4 : Mn 나노 형광체의 광학적 특성에 관한 연구)

  • Nam, Sang-Hun;Kim, Myoung-Hwa;Lee, Sang-Duck;Boo, Jin-Hyo
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.66-71
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    • 2010
  • Spherical shape $Zn_2SiO_4:Mn$ phosphor particles with the mean particle size from submicron to micron sizes were prepared by ultrasonic spray pyrolysis method. A droplet separator was introduced to control the size distribution of the phosphor particles with spherical shape. The $Zn_2SiO_4:Mn$ phosphor particles with 2 mol% doping concentration of manganese have decay time and have photoluminescence intensities comparable with those of the latest commercial product prepared by the solid state reaction method. The size of the phosphor particles was decreased from 1 to 0.2 micrometers as the inorganic salt solution concentration was changed from 0 to 5 M. The phosphor particles prepared from the solutions above 0.5 M have photoluminescence intensities comparable with that of the latest commercial product.

Structural and Piezoelectric Properties of MnO2-Doped PZT-PSN Ceramics for Ultrasonic Vibrator (초음파 진동자용 MnO2가 Doping된 PZT-PSN 세라믹스의 구조 및 압전 특성)

  • Cha, Yoo-Jeong;Kim, Chang-Il;Kim, Kyoung-Jun;Jeong, Young-Hun;Lee, Young-Jin;Lee, Hai-Gun;Paik, Jong-Hoo
    • Korean Journal of Materials Research
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    • v.19 no.4
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    • pp.198-202
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    • 2009
  • For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

Effect of Sb/Bi Ratio on Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 Varistor (Sb/Bi비가 ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 바리스터의 소결과 입계 특성에 미치는 영향)

  • Hong, Youn-Woo;Lee, Young-Jin;Kim, Sei-Ki;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.878-885
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    • 2012
  • In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

Fabrication and characteristics of modified PZT System doped With $La_2O_3$ ($La_2O_3$가 첨가된 modified PZT계의 제조 및 특성)

  • 황학인;박준식;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.3
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    • pp.418-427
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    • 1997
  • The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3+0.11PbTiO_3+0.84PbZroO_3+0.4Wt%MnO_2$ (=0.05PSS +0.11PT+0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

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Effects of Mn- and K-addition on Catalytic Activity of Calcium Oxide for Methane Activation (메탄 활성화반응에서 산화칼슘 촉매의 활성에 대한 망간과 칼륨의 첨가효과)

  • Park, Jong Sik;Kong, Jang Il;Jun, Jong Ho;Lee, Sung Han
    • Journal of the Korean Chemical Society
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    • v.42 no.6
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    • pp.618-628
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    • 1998
  • Pure CaO, Mn-doped CaO, Mn/CaO, and K/CaO catalysts were prepared and tested as catalysts for the oxidative coupling of methane in the temperature range of 600 to 800$^{\circ}C$ to investigate the effects of Mn- and K-addition on the catalytic activity of calcium oxide. To characterize the catalysts, X-ray powder diffraction(XRD), XPS, SEM, DSC, and TG analyses were performed. The catalytic reaction was carried out in a single-pass flow reactor using on-line gas chromatography system. Normalized reaction conditions were generally $p(CH_4)/p(O_2)=250$ Torr/50 Torr, total feed flow rate=30 mL/min, and 1 atm of total pressure with He being used as diluent gas. Among the catalysts tested, 6.3 mol% Mn-doped CaO catalyst showed the best $C_2$ yield of 8.0% with a selectivity of 43.2% at 775$^{\circ}C$. The $C_2$ selectivity increased on lightly doped CaO catalysts, while decreased on heavily doped CaO([Mn] > 6.3 mol%) catalysts. 6 wt.% Mn/CaO and 6 wt.% K/CaO catalysts showed the $C_2$ selectivities of 13.2% and 30.9%, respectively, for the reaction. Electrical conductivities of CaO and Mn-doped CaO were measured in the temperature range of 500 to 1000$^{\circ}C$ at Po2's of $10^{-3}\; to\;10^{-1}\;atm.$ The electrical conductivity was decreased with Mn-doping and increased with increasing $P0_2$in the range of $10^{-3}\;to\;10^{-1}\;atm,$ indicating the specimens to be p-type semiconductors. It was suggested that the interstitial oxygen ions formed near the surface can activate methane and the formation of interstitial oxygen ions was discussed on the basis of solid-state chemistry.

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Ellipsometric study of Mn-doped $Bi_4Ti_3O_{12}$ thin films

  • Yoon, Jae-Jin;Ghong, Tae-Ho;Jung, Yong-Woo;Kim, Young-Dong;Seong, Tae-Geun;Kang, Lee-Seung;Nahm, Sahn
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.173-173
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    • 2010
  • $Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

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Electrical Transport Properties and Magnetoresistance of (1-x)La0.7Sr0.3MnO3/xZnFe2O4 Composites

  • Seo, Yong-Jun;Kim, Geun-Woo;Sung, Chang-Hoon;Lee, Chan-Gyu;Koo, Bon-Heun
    • Korean Journal of Materials Research
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    • v.20 no.3
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    • pp.137-141
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    • 2010
  • The $(1-x)La_{0.7}Sr_{0.3}MnO_3(LSMO)/xZnFe_2O_4$(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

Long-term Testing and Analysis of a ScSZ/LaSrCuFe Cell

  • Wackerl, Jurgen;Peck, Dong-Hyun;Markus, Torsten
    • Journal of the Korean Ceramic Society
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    • v.45 no.12
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    • pp.788-795
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    • 2008
  • An electrolyte supported SOFC cell was tested at $800^{\circ}C$ in air for 3600 h with an applied current density of $200\;mA/cm^2$ to examine possible cathode degradation issues. A scandium- stabilized zirconia (ScSZ) with additional manganese doping (ScSZ: Mn) was used as electrolyte. A strontium and copper-doped lanthanum ferrite (LaSrCuFe) and platinum were used as cathode and quasi-anode material, respectively. The DC resistance was logged over the complete testing period. Additionally, impedance spectroscopy was used from time to time to track changes of the cell in-situ. Post-test analysis of the cell using methods like scanning electron microscopy imaging and other electrochemical testing methods allow the identification of different degradation sources. The results indicate a promising combination of electrolyte and cathode material in terms of chemical compatibility and electrical performance.

Electrical Characteristics and Microstructure of Thin Films $BaTiO_3$ depending on The Sintering Temperature ($BaTiO_3$계 박막의 소결온도에 따른 미세구조와 전기적 특성)

  • Kim, D.K.;Jeon, J.B.;Park, C.B.;Song, M.J.;Kang, Y.C.;Park, H.A.;Soo, B.M.;Kim, T.W.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1573-1576
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    • 1997
  • Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

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THERMAL SATABILITY AND MAGNETORESISTANCE OF TOP SPIN VALVE WITH SYNTHETIC ANTIFERROMAGNET CoFe/Ru/CoFe/IrMn

  • J. Y. Hwang;Kim, M. Y.;K. I. Jun;J. R. Rhee;Lee, S. S.;D. G. Hwang;S. C. Yu;Lee, S. H.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.64-65
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    • 2002
  • Recently the synthetic antiferromagnetic layer (SAF) has received much attention because it replaces the pinned layer of the conventional spin valve (CSV) sensors and its overall performance [1], The spin valve (SV) with SAF has the from buffer/F/Cu/APl/Ru/AP2/AF, where F is the soft ferromagnetic layer (typically NiFe with CoFe interfacial doping), AP1 and AP2 are two ferromagnetic layers (typically CoFe alloys) antiferromagnetically coupled through a thin Ru layer. (omitted)

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