• Analytical Science and Technology
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• v.5 no.3
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• pp.327-332
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• 1992

Mn-Zn ferrite single crystals show some fluctuations in composition along the direction of growth by the conventional Bridgman method. The single crystal with a uniform composition was obtained by maintaining the liquid composition content. For example, two batches of powder were prepared : one is consisted of 52 mol% of $Fe_2O_3$, 30 mol% of MnO, and 18 mol% Zn(Composition A), and the other 53 mol% of $Fe_2O_3$, 28.5 mol% of MnO, and 18.5 mol% ZnO(Composition B). Crack-free single crystals with the uniform composition B were grown in a size of 60mm diameter, 300mm long by melting the pellets of composition A and followed by supplying the composition B as tablets. Initial permeabilities were obtained above 600 at 5 MHz in the region of 30~270 mm along the direction of growth.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.267-271
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• 2001

These experiments were carried out to examine the effects of elemental substitution of Mn and La-Mn on Sr-ferrite. The calcined properties for the Mn and La-Mn substitution were examined, and the sintered magnetic properties were compared with the stoichiometric condition. The magnetic properties of calcined SrM and (La-Mn)$_{0.3}$-SrM composition were as follows, respectively; M$_{s}$ : 61.06 emu/g, $_{i}$H$_{c}$ : 4.45 kOe and M$_{s}$ : 61.06 emu/g, $_{i}$H$_{c}$ : 4.46 kOe. Also, the sintered ferrite magnets of Mn$_{0.3}$-SrM and [(La-Mn)$_{0.3}$-SrM exhibited a similar properties to the stoichiometric composition but the coercivity of (La-Mn)$_{x}$-SrM was decreased rapidly with x=0.5.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.178-181
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• 2006

We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor $Si_{1-x}Mn_xTe_{1.5} $ crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature $T_C$ about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.

• Journal of the Korean Magnetics Society
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• v.19 no.5
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• pp.186-190
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• 2009

We investigated the magneto-optical properties and application of diluted magnetic semiconductors Cd$_{1-x}$Mn$_x$Te crystals with various Mn contents grown using a vertical Bridgman method. This material crystallizes in the zinc-blende structure for values of x < 0.82. The band-gap energy was depended on Mn mole fraction x linearly and increased with decreasing temperature. The Faraday rotation was increased as the photon energy increased near to that of the fundamental band gap and its increased with increasing Mn mole fraction. Optical isolator using the Cd$_{0.62}$Mn$_{0.38}$Te crystal shows that the isolation and insertion loss are 45 dB and 0.35 dB at 650 nm, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.96-101
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• 2001

In this study, diluted magnetic $Zn_{1-x}Mn_{x}Te$ epilayers were grown on GaAs(100) substrates by hot-wall epitaxy, and their characteristics were systematically examined. The maximum Mn composition of the $Zn_{1-x}Mn_{x}Te$ epilayers was 0.97. The crystallographic orientation was toward <100> and the structure of the $Zn_{1-x}Mn_{x}Te$ epilayers was the zincblende structure, identical to those of the GaAs substrate. With increasing the substrate temperature (350~$400^{\circ}C$), Mn composition increased (0.02~0.23) and he quality of the epilayer became worse. The lattice constants increased linearly with increasing Mn composition, but the band gap energy increased nonlinearly with increasing x.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.204-207
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• 2001

HWE 법으로 전 영역의 ZnMnTe 단결정 박막을 성장하였다. 상온 반사 스펙트럼으로부터 상온에서의 에너지 띠 간격이 Mn 조성비 증가에 따라 선형적으로 증가함을 알았다. 외부 자기장이 없는 10 K에서의 photoluminescence 스펙트럼에서 엑시톤 관련 near edge emission과 큰 조성비에서 지배적인 inta-$Mn^{2+}$ transition($^4T_1{\rightarrow}^6A_1$)을 관측하였다. edge emission은 조성비에 따라 선형적이고, intra-ion transition은 거의 변화가 없었다.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.166-172
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• 1999

The magnetic properties between Mn-Ir antiferromagnetic layer and Ni-Fe ferromagnetic layer have been investigated in Mn-Ir/Ni-Fe/Zr on Si wafer formed by magnetron sputtering. Mn-Ir was sputtered from Ir chips and Mn target using D.C. power, Ni-Fe and Zr were deposited from Ni-Fe and Zr targets using D.C. power under Ar atmosphere. We studied the dependence of the magnetic properties on Ir content of Mn-Ir layer for Mn-Ir/Ni-Fe bilayer, and obtained the highest $H_ex$ of 219 Oe and the low $H_c$ of 30 Oe. And then focused on the effect of base pressure for Mn-Ir containing multilayers. Our experimental data showed that if the base pressure is higher than $3.0{\times}10^{-6}\;Torr$, the exchange anisotropy of Mn-Ir/Ni-Fe/Zr disappeared probably due to the grain refining of Mn-Ir film. In addition we have studied the dependence of Zr buffer on magnetic properties of Mn-Ir/Ni-Fe/Zr multilayers, and observed that Zr buffer about (111) texture and lower $H_c$ of Mn-Ir/Ni-Fe/Zr multilayer.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1174-1179
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• 2001

Mn-Co-Ni oxide system has been used as the NTC thermistors for normal temperature applications. Mn-Co-Ni oxide-based thermistors with various compositions were sintered at 1250$^{\circ}C$ for 3 hours and then maintained at 1000$^{\circ}C$ for 3 hours. The electrical properties of the thermistors fabricated were measured. In particular the MCN622 composition (Mn$_3$O$_4$60 wt%, Co$_3$O$_4$20 wt%, NiO 20wt%) exhibited the lowest resistivity and relatively high B constant. The MCN721 composition (Mn$_3$O$_4$70wt%, Co$_3$O$_4$20wt%, NiO 10 wt%) showed the higher resistivity than any other compositions. The aging properties of each composition showed comparatively stable characteristics within ${\pm}$2%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.208-211
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• 2001

Hot wall epitaxy 법으로 GaAs(100) 기판 위에 $Zn_{1-x}Mn_xTe(0{\leq}x{\leq}1)$ 단결정 박막을 성장하였다. XRD 스펙트럼으로부터 $Zn_{1-x}Mn_xTe$ epilayer들이 전 영역에 걸쳐 zincblende 구조임을 알았다. double crystal rocking curve(DCRC)로부터 격자상수를 계산하고 이훌 이용하여 조성비를 계산하였다. ZnMnTe 단결정 박막의 DCRC 반치폭은 Mn 조성비가 증가함에 따라 급격하게 증가하다가 포화되는 모습을 나타내었다

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.