• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.86-90
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• 2000

The mixed body of clay and flyash containing unburnt carbon was examined at various sintering conditions in order to recycle flyash as environment-affinitive construction materials. Experimental results can be summarized as follows : when large aggregate of 2.54 cm dia. was sintered at a heating rate of $20^{\circ}C$/min, heterogeneous phase with bulgings, inner pores, and cracks were observed at the sintering temperature of $1200^{\circ}C$. Accordingly, heating patterns for the complete removal of the heterogeneous phase were proposed as countermeasures. The compressive strength of finally obtained aggregate was 670~870kg/$\textrm{cm}^2$, which is over two and a half times stronger than the minimum requirement of 200kg/$\textrm{cm}^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.648-662
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• 1996

Electrode surface reaction on glassy carbon and synthesized graphite (PVDF mixed graphite) in sulfuric acid solution is investigated by impedance spectroscopy at cyclic polarization. The redox peak, which may be due to the change of chemical adsorped functional group on electrode surface or oxidation and reduction of oxygen, is represented on glassy carbon and graphite electrode in potentio-dynamic current curve. The oxidation and reduction of these surface functional group on glassy carbon and PVDF mixed graphite have a major affect on the impedance spectrum and Faraday impedance parameter at cyclic polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.101-102
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C$ and $440^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4} eV/K)T^2/(T+332 K)$. After the as-grown $AgGaS_2$ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.100-101
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• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.54-59
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• 2010

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

• Korean Chemical Engineering Research
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• v.44 no.3
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• pp.289-293
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• 2006

In the CMSMPR (continuous mixed suspension mixed product removal)system, the effect of temperature and RPM on the CSD (crystal size distribution) in the calcium carbonate process was investigated. In the steady state operation, the change of solution pH was small. At the low temperature and below 300 RPM, volume mean size change of calcium carbonate was stable and CSD was narrow. In the SEM view, calcite and aragonite was obtained.

• Restorative Dentistry and Endodontics
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• v.4 no.1
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• pp.29-34
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• 1978

The purpose of this study was to measure penetration of dye stuff(5% Methylene blue, Hematoxylin, Crystal violet and Safranin-O) on silicate cement, Adaptic, Hi-pol and unfilled resin. Each filling material was mixed on the mixing pad and the mixed material was inserted with condensation force of 500gr, 1000gr and 2000gr and without condensation force into preformed glass tube (10mm in diameter and 10mm in height). The specimen was stored in the air for 24 hours, then specimen was immersed in various dye solution (5% methylene blue, hematoxin, crystal violet and safranin-O) for different period of time (l hour and 24 hours). These dye-treated specimen was cut horizontally at the middle portion and the dye penetration in cut surface was measured. Following results were obtained. 1. Pentration of various dye was excessive in silicate cement with and without Condensation force. 2. There has been no evidence of dye penetration in unfilled resin. 3. Dye penetration occurced with in 1 hour period and the extending time didn't affect the dye penetration.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.805-808
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• 2000

Mixed crystal powders based on Cd,Fe, and S have been synthesized by varying the ratio of CdS and $FeS_2in$ order to find a suitable material usefuI for the effectivc conversion of solar energy. Hydrogen gas was evolved only with CdS/Ptby photocatal ytic reaction under white light in an aqueous 1 M sodiumsulfite solution. From electrochemical studies of semiconductor electrodes. itwas shown that the onset potential shifted to the positive direction and that the bandgap energy also decreased as the molar ratio of Fe increased. A hydrogen evolution mechanism in terms of the conduction band potential and hydrogen evolution potential is proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.