• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.21-25
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• 2000

The old age may experienced the visual acuity decrease according to refraction abnormality and they have a inconvenient real life style on viewing condition. So that, This study can provide the accurate information on the treatment of visual acuity of a male old ages by test of eye refraction state. The test was performed the visual acuity test by the object and subject methods.and the subjects was the Korean male over 55 old age. The eye types were 0.8 % positive for emmetropia, 15.2 % for myopia, and 84 % for hyperopia, respectively. The abnormal refraction eyes were 1.3 % positive for simple myopic astigmatism, 13.9 % for compound myopic astigmatism. 3.4 % for simple hyperopia and 3.1 % for simple hyperopic astigmatism, 77.5 % for mixed astigmatism, respectively. The asix of astigmatisms were 62% positive for against-the-rule astigmatism, 6% for with-the rule astigmatism, and 32 % for oblique astigmatism, respectively. On the total myopic spherical power, the $-0.50{\leq}$spheric equivalent <-2.00 diopter was 84.3%, the $-2.00{\leq}$spherical equivalent <-6.00.diopter was 15.7%. On the total hyperopic spherical power, the $+0.50{\leq}$spheric equivalent <+2.00 diopter was 74.2%, the $+2.00{\leq}$spherical equivalent <+6.00 diopter was 24.8%, and anything over the +6.00 diopter was 1%. On the astigmatic power, the $0.5{\leq}$cylinder <1.00 diopter was 54.1%, the $1.00{\leq}$cylinder <2.00 diopter was 32.4%, and anything over the 2.00 cylinder diopter was 13.5%.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.11-21
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• 1999

For microelectronic packaging application, the crystallizable glass powder in CaO-$A1_2O_3-SiO_2-B_2O_3$system was mixed with various amounts of alumina inclusions (\approx 4 $\mu \textrm{m}$), and its sintering behavior, crystallization behavior, and dielectric constant were examined in terms of vol% of alumina and the reaction between the alumina and the glass. Sintering of the CASB glass powder alone at $900^{\circ}C$ resulted in full densification (99.5%). Sintering of alumina-filled composite at $900^{\circ}C$ also resulted in a substantial denslfication higher than 97% of theoretical density, In this case, the maximum volume percent of alumina should be less than 40%. XRD analysis revealed that there was a partial dissolution of alumina into the glass. This alumina dissolution, however, did not show the particle growth and shape accommodation. Therefore, the sintering of both the pure glans and the alumina-filled composite was mainly achieved by the viscous flow and the redistribution of the glass. Alumina dissolution accelerated the crystallization initiation time at $1000^{\circ}C$ and hindered the densification of the glass. Dielectric constants of both the alumina-filled glass and the glass-ceramic composites were increased with increasing alumina content and followed rule of mixture. In case of the glass-ceramic matrix composites showed relatively lower dielectric constant than the glass matrix composite. Furthermore, as alumina content increased, crystallization behavior of the glass was changed due to the reaction between the glass and the alumina. As alumina reacted with the glass matrix, the major crystallized phase was shifted from wollastonite to gehlenite. In this system, alumina dissolution strongly depended on the particle size: When the particle size of alumina was increased to 15 $\mu\textrm{m}$, no sign of dissolution was observed and the major crystallized phase was wollastonite.

• Conservation Science in Museum
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• v.1
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• pp.75-86
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• 1999

Conservation treatments were done for the gilt bronze saddle accessory excavated from Tomb No. 89 in Kyo-dong, Changnyong in Japanese rule period. The saddle accessory, broken into numerous pieces, was mixed with other remains. Principal aims of conservation treatments were to recover original shape of object and stabilize its material. In the process of treatments manufacturing technique of the remain was examined minutely. Thick layers of corrosion substances were peeled off and numerous pieces were pasted together to restore the original shape. And then the saddle accessory was mounted on an acrylic board to be handled and exhibited safely. In this process, it was confirmed that various ancient techniques of metalic crafts such as amalgam gilding, riveting, piercing, line engraving, stamping, chasing etc. had been used to make the saddle accessory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• Journal of the Korean Society of Costume
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• v.26
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• pp.69-85
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• 1995

Recently Southeast Asia has developed, so the world concerns about these regions. Ethnic fashion in 90's is mostly the influence of these regions' folk costume. The purpose of this study is to review aes-thetic aspects of folk costume in Southeast Asia, to investigate the influence on modern fashion and to predict the possibility of Asia fashion's adaption to modern fashion and to help the cre-ation of fashion design. First of all, the folk costume in Southeast Asia is classified drapery style and sarong style. These non-west clothing appeal to modern fashion as the oriental tranditional beauty. Ethnic fashion appeared in 1990's is attempted to be more complex and variable than the pre-vious ethnic fashion. Asian ethnic fashion influenced from folk costume of Southeast Asia is-wholly or party-the style, color, motif from each country's folk costume. And each country's unique art became the motive of the creative design. Specially, Aosai and Quan in Vietnam and sar-ong style in most Southeast Asia are important motives expressing minority's nostalgia. These are expressed in variable ways. Which are harmonized with latest other fashion trend : retro style and naturalism, Layered look, hippie look, unfinished sewing technic and manual technic are used one image matched the folk costume of Southeast Asia which is natural. Another characterstic in Asian ethnic fashion is a multi-ethnic. This harmonizes the different culture between the Orient and the West beyond the age and culture, and combines each folk costume. It is involved that the fashion can develop indivisual country's costumes mixed with her own unique characteristics and the fashion break the traditional concept and disagree with a certain coordinate rule and it indicates that the fashion shows various style, mood, volume and room as well as space. Like this recent Asian ethnic fashion comes to us in a strange favor. The people who are tired of traditional western civilization's outcome will receive a great tastes from the Asian ethnic fashion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Journal of The Korean Association of Information Education
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• v.2 no.2
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• pp.162-173
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• 1998

Writing a CAI program containing Chinese characters requires a common Chinese character code to share information for educational purposes. A Chinese character code setting needs to allow a mixed use of both vowel and stroke order, to represent Chinese characters in simplified Chinese as well as in Japanese version, and to have a conversion process for data exchange among different sets of Chinese codes. Waste in code area is expected when vowel order is used because heteronyms are recognized as different. However, using stroke order facilitates in data recovery preventing duplicate code generation, though it does not comply with the phonetic rule. We claim that the first and second level Chinese code area needs to be expanded as much as academic and industrial circles have demanded. Also, we assert that Unicode can be a temporary measure for an educational code system due to its interoperability, expandability, and expressivity of character sets.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.