• 제목/요약/키워드: Mixed Rule

검색결과 119건 처리시간 0.028초

소결온도에 따른 $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ 세라믹스의 마이크로파 유전 특성 (Microwave Dielectric Properties of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ Ceramics with Sintering Temperature)

  • 김재식;최의선;이문기;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.363-366
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    • 2004
  • The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional mixed oxide method and sintered at $1425^{\circ}C{\sim}1500^{\circ}C$. According to XRD Patterns, hexagonal $Mg_4Ta_2O_9$ phase and cubic $SrTiO_3$ Phase were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596GHz and $-3.14ppm/^{\circ}C$, respectively.

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우리나라 식생활 개선 정책의 시대적 변화에 대한 고찰 (Evaluation on Food Policy classified by period on Korean)

  • 계승희
    • 대한가정학회지
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    • 제32권1호
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    • pp.165-180
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    • 1994
  • The change in the police concerning food and dietary life were analyzed in order to provide bases of establishing policy of food and dietary life properly. The last half one century was divided into six periods as follows ; The period since liberlation from Japanese rule(1945-1949) the 1950's (1950-1959) 1960's (1960-1969) 1970's (1970-1979) 1980's (1980-1989) 1990's (1990-1992). Dietary life by 1960's were a life of distress and policies coducted by government took on an relief supply of food at this period. Movement about 'intake of mixed rice with barley and foods from flour' to supress rice consumption were encouraged by government. And Korean recommended dietary allowance was made and the national nutritional survey was practived in the first place by the Ministry of Health and Social Affairs. Dietary life of the country begin to improve sharply along with rice self-sufficiency since 1975 With the growth of food and eating out industry intake of instant food processed food and fast food has increased at the 1980's To ministry of Health and Social Affairs drove campaign of 'Joo-Moon Sik Dahn Je' for dietary life improvement at 1981 The Ministry of Education made and announced a 'School Feeding Law' at 1981 The government that is the Office of Permier and the Ministry of Health and Social Affairs developed compaign for improvement of dietary life and drove 'Jo Eun Sik Dahan Je' with Association of restaurant jointly. Policy on food and dietary life conducted by government up to data were planned mainly dependent on food production supply and demand of food. Infectious diseases continue to decrease with increasing of degenerative diseases which will be required proper management of dietary life. In the future more aggressive intergrated food policy are needed to maintain the public health. Aoso dietary improvement movement should be drived actively.

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정보이득 분할을 이용한 분류기법의 지배적 초월평면 생성기법 (A dominant hyperrectangle generation technique of classification using IG partitioning)

  • 이형일
    • 한국컴퓨터정보학회논문지
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    • 제19권1호
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    • pp.149-156
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    • 2014
  • 중첩형 일반화 사례 (NGE, Nested Generalized Exemplar) 기법은 거리 기반 분류를 최적 일치 규칙으로 사용하며, 노이즈에 대한 내구력을 증가시켜 주는 동시에 모델 크기를 감소시키는 장점이 있다. NGE 학습 중 생성된 교차(cross)나 중첩(overlap) 현상은 분류성능을 저해하는 요인으로 작용한다. 따라서 본 논문은 NGE 학습 중 생성된 교차나 중첩 현상이 발생한 초월 평면에대해 상호정보가 가장 큰 구간을 분리하여, 새로운 초월평면을 구성하게 하여, 분류성능 향상시키고 초월평면의 개수를 감소시키는 기법인 DHGen(Dominant Hyperrectangle Generation) 알고리즘을 제안하였다. 제안한 DHGen은 분류성능면에서 kNN과 유사하고 NGE이론으로 구현한 EACH보다 우수함을 UCI Machine Learning Repository에서 벤치마크데이터를 발췌한 실험자료로 입증하였다.

Automated Systems and Trust: Mineworkers' Trust in Proximity Detection Systems for Mobile Machines

  • Swanson, LaTasha R.;Bellanca, Jennica L.;Helton, Justin
    • Safety and Health at Work
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    • 제10권4호
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    • pp.461-469
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    • 2019
  • Background: Collisions involving workers and mobile machines continue to be a major concern in underground coal mines. Over the last 30 years, these collisions have resulted in numerous injuries and fatalities. Recently, the Mine Safety and Health Administration (MSHA) proposed a rule that would require mines to equip mobile machines with proximity detection systems (PDSs) (systems designed for automated collision avoidance). Even though this regulation has not been enacted, some mines have installed PDSs on their scoops and hauling machines. However, early implementation of PDSs has introduced a variety of safety concerns. Past findings show that workers' trust can affect technology integration and influence unsafe use of automated technologies. Methods: Using a mixed-methods approach, the present study explores the effect that factors such as mine of employment, age, experience, and system type have on workers' trust in PDSs for mobile machines. The study also explores how workers are trained on PDSs and how this training influences trust. Results: The study resulted in three major findings. First, the mine of employment had a significant influence on workers' trust in mobile PDSs. Second, hands-on and classroom training was the most common types of training. Finally, over 70% of workers are trained on the system by the mine compared with 36% trained by the system manufacturer. Conclusion: The influence of workers' mine of employment on trust in PDSs may indicate that practitioners and researchers may need to give the organizational and physical characteristics of each mine careful consideration to ensure safe integration of automated systems.

Hot Wall Epitaxy (HWE)에 의한 $ZnGa_{2}Se_{4}$ 단결정 박막 성장과 광전기적 특성 (Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Single Crystal Thin Films by Hot Wall Epitaxy)

  • 박창선;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

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Hot Wall Epitaxy (HWE)에 의한 $CdGa_{2}Se_{4}$ 단결정 박막 성장과 광전기적 특성 (Growth and Optoelectric Characterization of $CdGa_{2}Se_{4}$ Single Crystal Thin Films by Hot Wall Epitaxy)

  • 홍광준;박창선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

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해난구조비의 보험보상에 관한 연구 (A study on Insurance Indemnity of Salvage award.)

  • 이학헌
    • 한국항해학회지
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    • 제18권2호
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    • pp.129-149
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    • 1994
  • Sea casualties may happen in ship, cargo and the others concerned with sea transportation. : the shipo-wer, marine insurer and salvage company have been endeavored to compensate salvage award with some rule and regulation such as Marine Insurance Act, York Antwerp Rules and Average adjustment rules. Once sea casualties happened, the salvage contract is established between the owners, marine insurance and salvage company, the contract are divided into so many kinds of them. In this paper, we have an analysis on the character of the salvage contract whether the characteristic contents of them are in benefit to any party or not. In this connection with these positive or negative character of the contract, it is worthwhile to compare the actual salvage expenses contract with no cure no pay contract. LOF 1990 has been revised recently, which is based on no cure no pay, expecially, the special compensation, safety net clause of LOF 1990 could be understood in the view of the prevention of sea pollution and the preservation of sea circumstances in the world. Salvage has the complicated and quality, because the adjustment of almost salvage charges have been treated through the other sea casualties which is accompanied by and mixed with. Besides of the importance of salvage contracts, we are in need to understand that what the diversified character of salvage charges are. Furthermore the owners should carefully select the insured conditions on Hull Insurance according to the type of his company, operating ocean route, loading cargo and etc. In this paper, we would try to analyze the character of the salvage award such as General Average, Sue and Labour Charges and Particular charges. We would like to propose that the uniformed system of the salvage award. Compensation should be built up for the effective and efficient salvage operation and for reducing the claims and conflicts from the concerned parties. To this end, we could expect that the uniformed system for salvage award compensation will come to be the benefit of all owners, insurers, salvage company.

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Hot Wall Epitaxy (HWE)에 의한 CdGa$_2$Se$_4$ 단결정 박막 성장과 광전기적 특성 (Growth and Optoelectric Characterization of CdGa$_2$Se$_4$ Sing1e Crystal Thin Films)

  • 홍광준;박창선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

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Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성 (Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films)

  • 박창선;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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펄스폭변조 기법을 이용한 신경망회로 설계 (A Neural Network Design using Pulsewidth-Modulation (PWM) Technique)

  • 전응련;전흥우;송성해;정금섭
    • 한국정보통신학회논문지
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    • 제6권1호
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    • pp.14-24
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    • 2002
  • 본 논문에서는 학습과 정정 기능을 갖는 PWM 뉴럴네트워크를 설계하였다. 설계된 PWM 뉴럴시스템에서, 네트워크의 입력과 출력 신호들은 PWM 신호에 의해서 표현되어진다. 뉴럴네트워크에서 곱셈은 가장 많이 사용하는 동작이다. 승산과 합산의 기능은 PWM 기술과 간단한 혼합모드 회로기술에 의해서 실현된다. 그러므로 설계된 뉴럴네트워크는 단지 소규모의 칩상에서 구현될 수가 있다. 하나의 뉴런과 세개의 시냅스, 연관된 학습회로로 설계된 네트워크회로는 양호한 선형성과 넓은 범위의 동작범위를 가지고 있다. PWM을 이용한 신경망회로의 학습능력을 검증하기 위해, 델타 학습 규칙을 적용하였다. AND 기능과 OR 기능 학습 예측 HSPICE 시뮬레이션을 통해서 설계한 신경망회로의 기능이 성공적임을 증명하였다.