• Title/Summary/Keyword: Mixed Gases

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An application of the electrostatic spray technology to increase scrubbing efficiency of SO$_{2}$ emitted from thermal systems (열시스템에서 생성된 SO$_{2}$ 가스의 배출저감을 위한 정전기 분무 원리의 응용)

  • Jeong, Jae-Yun;Byeon, Yeong-Cheol;Hwang, Jeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.21 no.8
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    • pp.1068-1076
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    • 1997
  • Emission control of acid exhaust gases from coal-fired power plants and waste incinerators has become an increasing concern of both industries and regulators. Among those gaseous emissions, SO$_{2}$ has been eliminated by a Spray Drying Absorber (SDA) system, where the exhaust gas is mixed with atomized limestone-water slurry droplets and then the chemical reaction of SO$_{2}$ with alkaline components of the liquid feed forms sulfates. Liquid atomization is necessary because it maximizes the reaction efficiency by increasing the total surface area of the alkaline components. An experimental study was performed with a laboratory scale SDA to investigate whether the scrubbing efficiency for SO$_{2}$ reduction increased or not with the application of a DC electric field to the limestone-water slurry. For a selected experimental condition SO$_{2}$ concentrations exited from the reactor were measured with various applied voltages and liquid flow rates. The applied voltage varied from -10 to 10 kV by 1 kV, and the volume flow rate of slurry was set to 15, 25, 35 ml/min which were within the range of emission mode. Consequently, the SO$_{2}$ scrubbing efficiency increased with increasing the applied voltage but was independent of the polarity of the applied voltage. For the electrical and flow conditions considered a theoretical study of estimating average size and charge of the atomized droplets was carried out based on the measured current-voltage characteristics. The droplet charge to mass ratio increased and the droplet diameter decreased as the strength of the applied voltage increased.

Membrane Process Development for $CO_2$ Separation of Flaring Gas (Flaring 가스의 $CO_2$ 분리를 위한 분리막 공정 기술개발)

  • Kim, Se Jong;Kim, Hack Eun;Cho, Won Jun;Ha, Seong Yong
    • Membrane Journal
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    • v.23 no.5
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    • pp.384-391
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    • 2013
  • We prepared composite membrane which was made with polysulfone supported hollow fiber membrane coated with Hyflon AD to eliminate $CO_2$ gas from mixed-gases which were generated in DME manufacturing processes. The performance of module about simulated flaring gas was measured by using manufactured composite membrane. 1-stage evaluation result shows $CO_2$ concentration was below 3% at 1.2 MPa and at Stage cut 0.24 above. In addition $CO_2$ removal rate and $CH_4$ recovery rate was 80% respectively at the same condition. 2-stage evaluation result shows, when the $CO_2$ concentration of product gas was fixed at 5%, recycled $CO_2$ at stage cut 0.074 had the same concentration as the feed gas and the recovery rate of $CH_4$ was 99% at the moment.

Measurement of mass Transfer Coefficients for Adsorptive Bulk Gas Separation with Velocity Variations (기체속도가 변하는 벌크기체의 흡착공정에서 물질전달계수의 측정)

  • Min, Jun-Ho;Choi, Min-Ho;Suh, Sung-Sup
    • Applied Chemistry for Engineering
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    • v.10 no.2
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    • pp.310-318
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    • 1999
  • The concentration breakthrough curves were examined to predict mass transfer coefficients of nitrogen and oxygen in adsorption column for design data of PSA process. Experimental breakthrough curves for bulk gas flow were compared with theoretical simulation results. For quantitative analysis of the adsorption, coupled Langmuir isotherm was considered and LDF model was used to describe the mass transfer effect. In the experimental and theoretical results, it was found that mass transfer coefficient was not affected by flow rate but strongly affected by pressure. As a result of this tendency, mass transfer resistance in this system was proved to belong to the macropore diffusion controlling region and the mass transfer coefficients could be expressed by exponential functions of pressure change. The mass transfer coefficients for one component, nitrogen or oxygen, were successfully applied to breakthrough curves for bulk mixed gases. The experimental curves were reasonably in consistent with the theoretical curves and the error time was less than 5 percent.

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Graphene Formation on Ni/SiO2/Si Substrate Using Carbon Atoms Activated by Inductively-Coupled Plasma Chemical Vapor Deposition (유도결합 플라즈마 화학기상증착법에 의해 활성화된 탄소원자를 이용한 Ni/SiO2/Si 기판에서 그래핀 성장)

  • Nang, Lam Van;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.23 no.1
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    • pp.47-52
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    • 2013
  • Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

Simultaneous Removal of Gas and Dust by Activated Carbon Coated Electrode

  • Kim, Kwang Soo;Park, Jung O;Lee, Ju Haeng;Jun, Tae Hwan;Kim, Ilho
    • Environmental Engineering Research
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    • v.18 no.4
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    • pp.229-234
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    • 2013
  • This study aimed to develop a new dust collecting system equipped with an activated carbon (A.C.) coated electrode. Before fabrication, pre-treatment of A.C. was performed to remove metal ions within the A.C. to enlarge its specific surface area. Then, pre-treated A.C., black carbon, polyvinyl acetate (PVAc), and methanol were mixed to make a gel compound, which was coated onto aluminum plates to fabricate electrodes. The optimal mixing ratio of A.C., black carbon, PVAc, and methanol was found to be 10 g: 2 g: 3 g: 20 mL. After fabrication, the electrodes were used in the batch-type experiment for $NH_3$ and $H_2S$ removal. The reduction rates of the gases were high at the beginning and slowly reduced with time. Dust collection experiments were conducted in continuous flow, with various voltages applied. Compared to 5 kV, dust removal efficiency was 1.5 times higher when 10 kV was applied. Increasing the number of electrodes applied also increased the collecting efficiency. The correlation coefficient between actual collecting efficiency and trend line was higher than 99%. Consequently, the novel dust collection system equipped with A.C. coated electrode appears to be a promising substitute for existing dust-control devices.

Structural, Morphological, and Optical Properties of AlN Thin Films Subjected to Oxygen Flow Ratio (산소 유량비 변화에 따른 AlN 박막의 구조, 표면 및 광학적 특성)

  • Cho, Shin-Ho;Kim, Moon-Hwan
    • Journal of the Korean Vacuum Society
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    • v.19 no.4
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    • pp.287-292
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    • 2010
  • We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

Emission Characteristics of VOCs in Drying Process for Plywood Manufacturing (합판 제조용 목재 건조공정에서의 휘발성 유기화합물(VOCs) 배출특성)

  • Jang, Jeong-Gook;Kim, Mi-Ran
    • Journal of Environmental Science International
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    • v.17 no.12
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    • pp.1381-1390
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    • 2008
  • Emission characteristics of volatile organic compounds (VOCs) were investigated in the flue gas emitted from wood drying process for plywood manufacturing. The moisture content of raw timber was average 48%, and its density was $831.55kg/m^3$. But the moisture content of dried wood is needed less than around 10%, thus the moisture contents of flue gas should be remarkably high(about 18.2 V/V%). Therefore, the vapor in flue gas is equivalent to 320 ton-vapor/day when 1100 ton-wood/day is treated in the wood drying process. The temperature of flue gas ranges from $140^{\circ}C\;to\;150^{\circ}C$ in each dryer stack with exception of the input site of wood(about $110^{\circ}C$). The velocity of flue gas in each stack ranges from 1.7 to 9.7m/sec. In order to assess the concentrations and attribution rate of odorous compounds, it was analyzed about 40 VOCs in the flue gases. It was found that the major odorous compounds were 8 compounds, and the concentrations of major VOCs(ppm) were as follows; benzene: $0.054{\sim}0.052$, toluene: $1.011{\sim}2.547$, ethylbenzene: $0.472{\sim}2.023$, m,p-xylene: $0.504{\sim}3.245$, styrene: $0.015{\sim}0.148$, o-xylene : $0.271{\sim}1.097$, ethanol: $11.2{\sim}32.5$, ${\alpha}$-pinene: $0.908{\sim}10.578$, ${\beta}$-pinene: $0.982{\sim}14.278$. The attribution rate of terpenes (${\alpha}$-pinene, ${\beta}$-pinene) was about 60.56%, and that of aromatics and alcohols was about 22.77%, and 16.67%, respectively. It is suggested that the adequate control device should be used to control both the water soluble and non-soluble compounds because both compounds were mixed in flue gas.

Influence of SF6/N2 Gas Mixture Ratios on the Lightning Streamer Propagation Characteristics of 22 kV MV Circuit Breaker

  • Gandhi, R.;Chandrasekar, S.;Nagarajan, C.
    • Journal of Electrical Engineering and Technology
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    • v.13 no.4
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    • pp.1663-1672
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    • 2018
  • In recent times, gas insulated medium voltage (MV) circuit breakers (CB) form a vital component in power system network, considering its advantages such as reduced size and safety margins. Gas insulation characteristics of circuit breakers are generally measured by lightning impulse (LI) test according to IEC standard 60060-1 as a factory routine test. Considering the environmental issues of $SF_6$ gas, many research works are being carried out towards the mixture of $SF_6$ gases for high voltage insulation applications. However, few reports are only available regarding the LI withstand and streamer propagation characteristics (at both positive and negative polarity of waveform) of $SF_6/N_2$ gas mixture insulated medium voltage circuit breakers. In this paper, positive and negative polarity LI tests are carried out on 22 kV medium voltage circuit breaker filled with $SF_6/N_2$ gas mixture at different gas pressures (1-5 bar) and at different gas mixture ratios. Important LI parameters such as breakdown voltage, streamer velocity, time to breakdown and acceleration voltage are evaluated with IEC standard LI ($1.2/50{\mu}s$) waveform. Weibull distribution analysis of LI breakdown voltage data is carried out and 50% probability breakdown voltage, scale parameter and shape parameter are evaluated. Results illustrate that the $25%SF_6+75%N_2$ gas filled insulation considerably enhances the LI withstand and breakdown strength of MV circuit breakers. LI breakdown voltage of circuit breaker under negative polarity shows higher value when compared with positive polarity. Results show that maintaining the gas pressure at 0.3 MPa (3 bar) with 10% $SF_6$ gas mixed with 90% $N_2$ will give optimum lighting impulse withstand performance of 22 kV MV circuit breaker.

Heat treatment effects on the electrical properties of $In_2O_3$-ZnO films prepared by rf-magnetron sputtering method (마그네트론 스퍼터링 방법으로 제작된 $In_2O_3$-ZnO 박막의 전기적 특성에 대한 열처리 효과)

  • Kim, Hwa-Min;Kim, Jong-Jae
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.238-244
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    • 2005
  • IZO thin films are prepared on a corning 7059 glass substrate in a mixed gases of Ar +$O_2$ by rf-magnetron sputtering, using a powder target with a composition ratio of $In_{2}O_{3}$ : ZnO=90 : 10 $wt.\%$. Their electrical sheet resistance are strongly dependent on the oxygen concentration introduced during the deposition, a minimum resistivity of $3.7\times10^{-4}\Omega\cdot$ cm and an average transmittance over $85\%$ in the visible range are obtained in a film deposited in pure Ar gas which is close to near the stoichiometry. During the heat treatment from room temperature up tp $600^{\circ}C$ in various environments, the electrical resistance changes are explained by cyrstallizations or oxidizations of In metal and InO contained in the IZO film. The electrical properties due to oxygen adsorption and phase transitions occurring at temperatures over $40000^{\circ}C$ during heat treatment in air are also investigated.

Interface Characteristics and Electrical Properties of SiO2 and V2O5 Thin Films Deposited by the Sputtering (스퍼터링 방법으로 증착한 SiO2와 V2O5박막의 전류특성과 계면분석)

  • Li, Xiangjiang;Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.66-69
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    • 2018
  • This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.