• Journal of the Korean Society for Nondestructive Testing
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• v.27 no.1
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• pp.23-30
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• 2007

We observed the NaCl concentration of solutions using a near-field microwave microprobe(NFMM). Instead of the usual technique, we take advantage of the noncontact evaluation capabilities of a NFMM. A NFMM with a high Q dielectric resonator allows observation of small variations of the permittivity due to changes in the NaCl concentration. The changes of NaCl concentration due to a change of permittivity of the NaCl solution were investigated by measuring the microwave reflection coefficient $S_{11}$ of the resonator. The NaCl sensor consisted of a dielectric resonator coupled to a probe tip at an operating frequency of about f=4 GHz. The change of the NaCl concentration is directly related to the change of the reflection coefficient due to a near field electromagnetic interaction between the probe tip and the NaCl solution. In order to determine the probe selectivity, we measured a mixture solution of NaCl and glucose.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.2
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• pp.192-197
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• 2012

In this paper, a non-contact microwave technique was presented to detect the surface crack of the metals. An open-ended coaxial cable line was used as a sensor at 11 GHz, and the reflection coefficients were measured by scanning along the metal surface including artificial surface cracks. A parameter, the K value which was defined as the difference between maximum and minimum reflection coefficients, was measured and used to estimate the crack depth. A linear relationship between the K value and crack depth was found. This study showed that non-contact detection of the surface cracks of metals is possible using the open-ended coaxial line sensor at X-band.

• Journal of the Korea Institute of Military Science and Technology
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• v.27 no.3
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• pp.311-318
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• 2024

In this paper, a design for a radio frequency(RF) and infrared(IR) absorber with metasurfaces is discussed in microwave frequency bands. The RF absorber includes double layers of metasurfaces to operate in S- and X-bands. Effects of sheet resistance of the metasurfaces and thicknesses of dielectric supporting layers on reflection responses are investigated. An IR stealth layer incorporates an array of conductive grids with slits to reflect IR signals but to transmit RF signals and visible rays. Periodicity of the grids and slits is studied for transmission responses in the X-band and a surface area ratio. Reflection responses of the RF/IR multispectral absorber are found to be lower than -10 dB and -16 dB in the S- and X-bands, respectively, from full-wave simulation. Finally, the RF/IR multispectral absorber is fabricated and its reflection responses are measured to verify designed performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.142-142
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• 2009

Bismuth-substituted yttrium iron garnet(Bi-YIG; $Bi_xY_{3-x}Fe_5O_{12}$, x=0, 0.5, 1.0, 1.5, 2.0) thin films were fabricated on glass substrates using a metal organic decomposition (MOD) method. The dielectric property was measured by NSMM(Near-field scanning microwave microscopy) system that operating frequency is 4 Ghz. The obtained reflection coefficient $S_{11}$ of the Bi:YIG thin films with different bismuth concentration was increased as the bismuth concentration increased due to the lattice mismatch and vacancy of ions because of a lager ionic radius of bismuth ion than yttrium ion.

• Journal of electromagnetic engineering and science
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• v.5 no.4
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• pp.153-160
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• 2005

In this paper, the novel microwave oscillator incorporating a planar cavity resonator(PCR) is presented to reduce the phase noise of the oscillator in a planar environment. Compared to the conventional planar( $\lambda$/4 open stub resonator), the phase noise is improved about 16 dBc/Hz @100 kHz. The design of the oscillator is based on a reflection type configuration using the low 1/f SiGe HBT transistor(LPT16ED). The output power is measured 2.76 dBm at 12.5 GHz. In this paper, the oscillator used to the PCR can be expected to provide a solution for low phase noise oscillator in microwave circuits.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.9
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• pp.1727-1732
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• 2011

In order to realize a high performance(low loss, high isolation) microwave power divider/combiner, we have designed the power combiner/divider precisely in accordance with the different hight of central part. In the case of the high central part of the hight of $h_r$=10.2, a compensating part of the conical line is inserted in the conical conversion transmission line, and in the case of low central part of the hight of $h_r$=5.0, the conical conversion transmission line is remodeled into the 2-stage bend structure. In both case, the reflection characteristics are improved to 30dB over the operating frequency range of 5GHz bandwidth. A resistance is inserted between the peripheral ports so as to try to improve the isolation characteristics of the device. For the 16-divider/combiner, the isolation characteristics are improved to 10dB over the operating frequency range of 5GHz bandwidth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.408-413
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• 1995

We investigated the effect of mechanical backside damage upon minority carrier recombination lifetime measurement in Czochralski silicon substrate by laser excitation/microwave reflection photoconductance decay method. The intensity of mechanical damage was evaluated by X-ray double crystal rocking curve, X-ray section topography and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the threshold full width at half maximum value which affect minority carrier lifetime measurement is about 13 secs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.522-525
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• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.341-342
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• 2008

A conductivity of soot at microwave frequency is presented using a novel technique for complex permittivity of materials. The method overcomes limitations of conventional methods which are cavity perturbation and transmission/reflection method. Resonant frequencies and Q factors are measured and simulated for the cylindrical cavity, and they are compared to each other. Similar material property of both real material and simulation material produce similar values of resonant frequency and Q factor. The complex permittivity of material can be determined by simulating the cavity to change material property until the simulation results are nearly the same as the measurement results. Cylindrical cavity has been realized for measurement at 880 MHz, and conductivity of soot is measured. A sample was made by depositing the soot on the glass. The proposed method shows that the conductivity of soot is 11 S/m.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.89-96
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• 1995

Lateral p-i-n photodiodes have been fabricated, electrically tested, and incorporated into microwave control circuits such as an optically excited microwave atttenuator and reflection type phase shifter. Circuit design procedures for the loaded-line phase shifter with the optically controlled p-i-n photodiode are presented. The equal loss loading mode presented for the first time for the phase shifter circuits with lossy load allows an equal insertion loss of the phase shifter in both of its phase states. It is found that the insertion loss of the equal loss loading mode phase shifter constructed with the fabricated p-i-n photodiode load are about 3dB for 11.25$^{\circ}$ bit and 1dB for 5.625$^{\circ}$ bit for the frequency range of 2GHz to 11GHz.