• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.91-97
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• 2003

The behaviors of diamond deposition using microwave plasma chemical vapor deposition method have been studied by varying the concentration of methane in the methane - hydrogen gas mixture. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $CH_4$ Judging from above results, we can conclude that the best value for partial pressure of $CH_4$ in growing process of thick films is about 13.8%.

• ETRI Journal
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• v.27 no.2
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.9
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• pp.46-51
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• 2009

This paper propose the new approach of the quantity effect by high efficiency inductor characteristic to the harmonic suppression of the lowpass filter. We applied the reliable de-embedding process in order to extract the precise elements values. Moreover, for the effective its application and comparison, the variable stepped impedance low pass filters with a same specification are designed. The proposed procedure is expected to handle the overall filter performance and to construct a synthesized equivalent circuit from its determined specification.

• Journal of information and communication convergence engineering
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• v.15 no.2
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• pp.112-116
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• 2017

In this work, we demonstrated a low noise and high linearity low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with novel active bias circuit for LTE applications. The device technology used in this work relies on a process involving a $0.25-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT). The LNA MMIC with a novel active bias circuit has a small signal gain of $19.7{\pm}1.5dB$ and output third order intercept point (OIP3) of 38-39 dBm in the frequency range 1.75-2.65 GHz. The noise figure (NF) is less than 0.58 dB over the full bandwidth. Compared with the characteristics of the LNA MMIC without using the novel active bias circuit, the OIP3 is improved about 2-3 dBm. The small signal gain and NF showed no significant change after using the active bias circuit. The novel active bias circuit indeed improves the linearity performance of the LNA MMIC without degradation.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.12-16
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• 2018

In this work, a voltage controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) was demonstrated for 10-GHz band motion detecting sensors. The VCO MMIC was fabricated using a $2-{\mu}m$ InGap/GaAs HBT process, and the tuning of the oscillation frequency is achieved by changing the internal capacitance in the HBT, instead of using extra varactor diodes. The implemented VCO MMIC has a micro size of $500{\mu}m{\times}500{\mu}m$, and demonstrates the value of inserting the VCO into a single chip transceiver. The experimental results showed that the frequency tuning characteristic was above 30 MHz, with the excellent output flatness characteristic of ${\pm}0.2dBm$ over the tuning bandwidth. And, the VCO MMIC exhibited a phase noise characteristic of -92.64 dBc/Hz and -118.28 dBc/Hz at the 100 kHz and 1 MHz offset frequencies from the carrier, respectively. The measured values were consistent with the design values, and exhibited good performance.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1062-1065
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• 2002

We demonstrate the MMIC(monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 ㎓ local oscillator signals from 14.5 ㎓ input signals. These devices were designed and fabricated by using the MMIC integration process of 0.1 $\mu\textrm{m}$ gate-length PHEMTs (pseudomorphic high electron mobility transistors). The measurements showed S$\_$11/ of -9.2 dB at 14.5 ㎓, S/sub22/ of -18.6 dB at 29 ㎓ and a minimum conversion loss of 18.2 dB at 14.5 ㎓ with an input power of 6 dBm. The fundamental signal of 14.5㎓ was suppressed below 15.2 dBc compared with the second harmonic signal at the output port, and the isolation characteristics of the fundamental signal between the input and the output port were maintained above 30 dB in the frequency range of 10.5 ㎓ to 18.5 ㎓.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.203-207
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• 1999

In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1147-1161
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• 1995

When ceramic membrance was made from metal salt solution in place of metal akoxide solution, crack free and good adhesion to supporter was optimized for sol stability and good adhesion force. A starting sol was prepared from aluminum oxychloride aqueous solutjion in order to inhibit the grain growthof Al2O3 during heat treatment. The crack free dip coating can't be achieved in 1mol/ι zirconium oxychloride solution because of the high viscosity which interferes with the hydration copolymerization between Al3+ ion and Zr4+ ion. Thus Al2O3-ZrO2 sol stability and viscosity for dip coating was effective when 0.01 mol/ι zirconium oxychloride was added. The minimizing of crack and achieving better adhesion to the supporter wa obtained by microwave drying, surfactant addition and ultrasonic dip coating in wet atmosphere. The result seems to minimize the capillary force and improve the adhesive ability to supporter during the process. Where the average pore size of Al2O3-ZrO2 ultrafilter ceramic membrane measured 17 Å by the BET method and observed γ-Al2O3 phase with tetragonal zirconia after firing at 700℃.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.42.2-42.2
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• 2010

Recently, highly porous bone substitutes, which have interconnected open pore structure, have been focused on improving their mechanical properties and modifying their functions. Especially, it is highly required to develop functional gradient structured bone substitute which is available for controlling their material properties such as bioresorption rate and elastic modulus. Porous $ZrO_2$ scaffold was fabricated by the sponge replica method using PU sponge. After 3 times of dip coating and the subsequent oven drying, burning out and microwave sintering were carried out. Various $ZrO_2$-BCP powder mixtures were prepared depending on the ratio and coated on the $ZrO_2$ scaffold by dip coating process. X-ray diffraction analysis was performed to characterize the phase identification of the scaffolds. Microstructures of the bone substitutes were observed using scanning electron microscopy.