• 제목/요약/키워드: Microwave plasma chemical vapor deposition

검색결과 116건 처리시간 0.026초

MPCVD에 의한 다이아몬드 박막의 결정구조 해석 (Crystal Structure Ana1ysis of the Diamond Films Grown by MPCVD)

  • 원종각;김종성;흥근조;권상직
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.391-394
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    • 1999
  • The diamond thin films are deposited on silicon using MPCVD(Microwave Plasma Chemical Vapor Deposition) method at various deposition microwave power and time. Diamond is deposited with 100 sccm H$_2$ and 2 sccm CH$_4$ by MPCVD. The crystallinity of diamond thin films were increased with increase of microwave power. The growth rate of diamond thin films were increased with increase of time.

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마이크로웨이브 플라즈마 화학기상성장법에 의한 다이아몬드 박막의 합성에 관한 연구 (A Study on the Diamond Thin Films Synthesized by Microwave Plasma Enhance Chemical Vapor Deposition)

  • 이병수;이상희;박상현;유동현;이백수;이덕출
    • 한국전기전자재료학회논문지
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    • 제11권10호
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    • pp.809-814
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    • 1998
  • In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

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마이크로웨이브 플라즈마에서 메탄-수소가스로부터 다이아몬드박막의 화학증착 (Chemical Vapor Deposition of Diamond Film from Methane-Hydrogen Gas in Microwave Plasma)

  • 이길용;제정호
    • 한국세라믹학회지
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    • 제26권3호
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    • pp.331-340
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    • 1989
  • In this study, it was tried to deposit diamond films from a mixture of CH4 and H2 by the microwave plasma chemical vapor deposition(MWCVD). The MWCVD process was designed and set up from the 2.45GHz microwave generator. And the diamond film was successfully deposited on silicon wafers from the mixture of methane and hydrogen. The microstructures of the deposited diamond films were studied by using the following deposition variables : (a) methane concentration(0.6-10%), (b) reaction pressure(10-100torr), and (c) the substrate temperature(450-76$0^{\circ}C$).

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Control the growth direction of carbon nanofibers under direct current bias voltage applied microwave plasma enhanced chemical vapor deposition system

  • Kim Sung-Hoon
    • 한국결정성장학회지
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    • 제15권5호
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    • pp.198-201
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    • 2005
  • Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

마이크로웨이브 화학기상증착법으로 성장된 다이아몬드상 카본박막의 물리적인 특성연구 (Physical Properties of Diamond-like Carbon Thin Films Prepared by a Microwave Plasma-Enhanced Chemical Vapor Deposition)

  • 최원석;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.791-794
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    • 2003
  • DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

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마이크로웨이브 화학기상증착법으로 성장된 다이아몬드상 카본박막의 물리적인 특성연구 (Physical Properties of Diamond-like Carbon Thin Films Prepared by a Microwave Plasma-Enhanced Chemical Vapor Deposition)

  • 최원석;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.842-845
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    • 2003
  • DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

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MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착 (Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD))

  • 윤수종;김태규
    • 한국표면공학회지
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    • 제41권2호
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    • pp.43-47
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    • 2008
  • Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

MPCVD에 의해 합성된 다이아몬드 박막 특성에 대한 증착조건의 영향 (Effect of deposition on the properties of diamond thin films synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition)

  • 이병수;이덕출
    • 전기학회논문지P
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    • 제51권1호
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    • pp.33-38
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    • 2002
  • In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

Structure dependence of carbon nanotube on the process parameters using microwave plasma chemical vapor deposition

  • Kim, Gwang-Bai;Lee, Soo-Myun;Uh, Hyung-Soo;Park, Sang-Sik;Cho, Euo-Sik;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.678-680
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    • 2002
  • Vertically aligned carbon nanotubes(CNTs) have been grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using $H_2/CH_4$ mixture gas. We have investigated the Effect of process parameters on the growth of CNT. During the growth, microwave power, pressure, and growth temperature were varied from 300 W to 700 W, 10 Torr to 30 Torr, and 300 $^{\circ}C$ to 700 $^{\circ}C$. respectively. Then we controlled the size of CNTs. The structure of CNT was sensitively dependent on the process parameters.

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