• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.6
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• pp.272-275
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• 2004

A balanced single side-band (SSB) mixer employing a sub-harmonic configuration is designed for up and down conversions in K-band. The designed mixer uses anti-parallel diode (APD) pairs to effectively eliminate even harmonics of the local oscillator (LO) spurious signal. To reduce the odd harmonics of LO at the RF port, we employ a balanced configuration for LO. The fabricated chip shows 12$\pm$2dB of conversion loss and image-rejection ratio of about 20dB for down conversion at RF frequencies of 24-27.5GHz. As an up-conversion mode, the designed chip shows 12dB of conversion loss and image-rejection ratio of 20 ～ 25 dB at RF frequencies of 25 to 27GHz. The odd harmonics of the LO are measured below -37dBc.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.78-81
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• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.171-175
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• 2006

In this paper, we have developed a retrodirective active array operating in the 2 GHz LS band. The retrodirective array has the property of redirecting any electromagnetic wave back to the incoming direction without any priory informations. The system is integrated with phase conjugators and antenna array. Microwave phase conjugators can be implemented by microwave mixers. In this research, 2-port gate mixers using pHEMT and $1{\times}4$ monopole array have been used to achieve the retrodirectivity. The measured results have been compared with the theoretical prediction, and it has been shown that there exists a reasonable agreement between them. The monopole array can be used easily in many areas for simplicity and cost-effective property, and the retrodirective array developed in this research can be applied directly in the base station facilities for the wireless mobile communications. indoor wireless LAN and RFID transponders.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.5
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• pp.541-548
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• 2013

This paper presents a vector network analysis system for 2-port scattering parameters of microwave devices using some basic microwave instruments/devices such as signal generators, vector voltmeter, directional couplers and frequency mixers. The analytical model and implementation method for scattering parameter measurements - which can replace the vector network analyzers - are presented. The performance of the implemented system is evaluated through 1- and 2-port scattering parameter measurements, respectively. The vector volt signals which determine the scattering parameters are detected in two distinct methods depending on the frequency band of interests; a direct-detection method with a single signal generator and vector voltmeter for relatively low band and a heterodyne method to frequency down-mix associated with an additional signal source as well as frequency mixers for high band are used, respectively. Using these two methods, scattering parameters of UHF and X bands are evaluated and their performances are verified through a comercial vector network analyzer.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.203-207
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• 1999

In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.397-401
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• 2005

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the retrodirective array antenna. The retrodirective array, which can reflect the incident wave retrodirertively back to the source direction without any priori information, requires phase conjugators to achieve the phase change of 180 degrees for the incoming signal. frequency mixers can efficiently serve as phase conjugators. The circuit topology is of the 2-port structure to avoid the complexity of LO and Rf signal combination and matching circuits, using a pseudomorphic HEU device. The operating frequencies are 4.0 CHz, 2.01 CHz, and 1.99 CHz for LO, RF, and If signals, respectively. Conversion loss is measured to be -ldB and 1-dB compression point -l5 dBm at the LO power of -10 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.134-138
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• 2005

In this paper, we have developed a new type of the microwave phase conjugator for the active retrodirective antenna array. The circuit topology is consisted of a 2-port structure to avoid the complexity of LO and RF signal combination and matching, using the cascade connection of two single-ended mixers. The operating frequencies are 4.0 GHz, 2.01 GHz and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -7 dB and 1-dB compression point 15 dBm with the LO power of 9 dBm. For the most important parameter, the isolation between RE leakage and IF signal is as high as 25 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.239-244
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• 2004

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the LS band retrodirective antenna system. The mixer as a phase conjugator must have an If signal of which frequency is nearly as high as that of an RF signal, so this fact brings difficulty in the combination of input signals and the design of impedance matching circuit. The circuit configuration is chosen to be of the gate mixer using a pseudomorphic HEMT device. The operating frequencies are 4.00 ㎓, 2.01 ㎓, and 1.99 ㎓ for LO, RF, and IF, respectively. Conversion gain is measured to be 12.5 ㏈ and 1 ㏈ compression point -34 ㏈m at the LO power of -7 ㏈m. The mixer fabricated in this research is the single-ended type, where RF leakage signal appears inevitably at the If port because RF and If frequencies are almost the same. The circuit topology suggested here can be applied directly to the design of balanced-type mixers and phase conjugators.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.443-451
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• 2010

This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.