• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.686-689
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• 2013

The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{\circ}$ to $90^{\circ}$ in steps of $30^{\circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.131.2-131.2
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• 2015

마이크로웨이브를 이용한 플라즈마는 효율적인 전자가열이 가능하며, 낮은 이온에너지를 가지는 고밀도 플라즈마를 생성시킬 수 있다는 장점이 있다. 최근 산화물 반도체 및 대화면 디스플레이 장치내 소자의 보호막 증착용으로 저온 PECVD (Plasma Enhanced Chemical Vapor Deposition) 공정 및 장치의 필요성에 따라 마이크로웨이브를 이용한 PECVD 장치가 주목 받고 있다. 본 연구에서는 실리콘 나이트라이드 공정 장치 개발을 위한 2차원 시뮬레이션 모델을 완성하였다. Global modeling을 이용하여 확보한 Chemical reaction data에 대한 검증을 하였다. Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 전자 밀도, 전자 온도등의 플라즈마 변수의 변화를 관찰하였다. 또한 Navier Stokes equation을 추가하여 챔버 내의 Gas flow의 흐름을 고려한 시뮬레이션을 진행하여 분석하였다.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.65-70
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• 2006

Carbon nanotubes (CNT) grown by chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD), and followed by annealing at $400{\sim}500^{\circ}C$ were investigated for gas sensing under 1.5ppm $NO_{2}$ concentration at an operating temperature of $200^{\circ}C$. The electrical resistance of CNT sensor decreased with temperature, indicating a semiconductor type. The resistance of CNT sensor decreased with $NO_{2}$ adsorption. It was found that the sensitivity of sensor was affected by humidity and decreased under microwave irradiation for 3 minutes. The CNT sensor grown by PECVD had a higher sensitivity than that of CVD.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.415-419
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• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.198-202
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• 2006

We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.25-29
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• 2006

Vertical growth of iridium-catalyzed carbon nanofibers could be selectively grown on the MgO substrate using microwave plasma-enhanced chemical vapor deposition method. Growth positions of the iridium-catalyzed carbon nanofibers on the MgO substrate could be manipulated according to the applied bias voltage. At-150 V, the carbon nanofibers growth was confined only at the corner area of the substrate. Based on these results, we discussed the cause for the confinement of the vertically grown carbon nanofibers on the specific area of the MgO substrate as a function of the applied bias voltage.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.351-355
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increased the reaction area of graphite electrodes used carbon nanotube (CNT) and porous carbon. CNT is limited to device utilization in order to used a metal catalyst by lack of surface area to improve. In contrast carbon nanowall (CNW) is chemically very stable. So this paper, microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow carbon nanowall (CNW) on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. To find the growth properties of CNW according to the reaction gas ratio, we have changed the methane to hydrogen gas ratios (4:1, 2:1, 1:2, and 1:4). The vertical and surficial conditions of the grown CNW according to the gas ratios were characterized by a field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy measurements showed structure variations.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.337-350
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• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.