• 제목/요약/키워드: Microwave Plasma

검색결과 398건 처리시간 0.028초

마이크로파 방전램프의 전기적/광학적 특성 (Electrical and Optical Properties of Microwave Discharged Lamp)

  • 이종찬;황명근;배영진;허현수;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.492-494
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    • 2002
  • The fundamental principles of the operation of microwave discharges that are used to convert microwave energy to broad spectrum visual light are known. In this paper, emission dependance of microwave discharges in mixture content of sulfur with noble gases was studied. It is shown that the excitation of this gaseous mixture is carried out in two phases: (1) ionization of noble gas atoms by a microwave field and (2) the consequent maintenance of slightly ionized nonequilibrium plasma by the field. These two processes have essentially various thresholds for the microwave pump. The purpose of this work is to investigate spectral properties of the high frequency discharges in a mixture sulfur vapors with noble gases.

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Structure dependence of carbon nanotube on the process parameters using microwave plasma chemical vapor deposition

  • Kim, Gwang-Bai;Lee, Soo-Myun;Uh, Hyung-Soo;Park, Sang-Sik;Cho, Euo-Sik;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.678-680
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    • 2002
  • Vertically aligned carbon nanotubes(CNTs) have been grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using $H_2/CH_4$ mixture gas. We have investigated the Effect of process parameters on the growth of CNT. During the growth, microwave power, pressure, and growth temperature were varied from 300 W to 700 W, 10 Torr to 30 Torr, and 300 $^{\circ}C$ to 700 $^{\circ}C$. respectively. Then we controlled the size of CNTs. The structure of CNT was sensitively dependent on the process parameters.

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Application of Conformal Mapping in Analysis the Parallel Stripline Resonator

  • Tran, T.H.;You, S.J.;Kim, J.H.;Seong, D.J.;Jeong, J.R.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.180-180
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    • 2012
  • A microplasma system source based on microwave parallel stripline resonator (MPSR) was developed for the generation of microplasmas in a wide range of pressure from some torr to 760 torr. This source was operated at its resonance frequency that much depends upon not only its discharge gap size but also operated pressure. This paper applied a simple circuit model to analyze the effects of discharge gap size and pressure to resonance frequency and impedance of MPSR in the cases with and without plasma exist inside the discharge gap. In the process of calculating, the conformal mapping method was used to estimate the capacitance of the MPSR. The calculating results by using circuit model agree well with the simulation results that using commercial CST microwave studio software.

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Synthesis of Carbon Nanowalls by Microwave PECVD for Battery Electrode

  • Kim, Sung Yun;Shin, Seung Kwon;Kim, Hyungchul;Jung, Yeun-Ho;Kang, Hyunil;Choi, Won Seok;Kweon, Gi Back
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.198-200
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    • 2015
  • The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H2) and methane (CH4) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.

Role of Radio Frequency and Microwaves in Magnetic Fusion Plasma Research

  • Park, Hyeon K.
    • Journal of electromagnetic engineering and science
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    • 제17권4호
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    • pp.169-177
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    • 2017
  • The role of electromagnetic (EM) waves in magnetic fusion plasma-ranging from radio frequency (RF) to microwaves-has been extremely important, and understanding of EM wave propagation and related technology in this field has significantly advanced magnetic fusion plasma research. Auxiliary heating and current drive systems, aided by various forms of high-power RF and microwave sources, have contributed to achieving the required steady-state operation of plasmas with high temperatures (i.e., up to approximately 10 keV; 1 eV=10000 K) that are suitable for future fusion reactors. Here, various resonance values and cut-off characteristics of wave propagation in plasmas with a nonuniform magnetic field are used to optimize the efficiency of heating and current drive systems. In diagnostic applications, passive emissions and active sources in this frequency range are used to measure plasma parameters and dynamics; in particular, measurements of electron cyclotron emissions (ECEs) provide profile information regarding electron temperature. Recent developments in state-of-the-art 2D microwave imaging systems that measure fluctuations in electron temperature and density are largely based on ECE. The scattering process, phase delays, reflection/diffraction, and the polarization of actively launched EM waves provide us with the physics of magnetohydrodynamic instabilities and transport physics.

MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착 (Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD))

  • 윤수종;김태규
    • 한국표면공학회지
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    • 제41권2호
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    • pp.43-47
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    • 2008
  • Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

Large Area Diamond Nucleation and Si (001) Using Magnetoactive Microwave Plasma Chemical Vapor Deposition

  • Hyeongmin Jeon;Akimitsu Hatta;Hidetoshi Suzuki;Nam Jiang;Jaihyung Won;Toshimichi Ito;Takatomo Sasaki;Chongmu Lee;Akio Hiraki
    • The Korean Journal of Ceramics
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    • 제3권3호
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    • pp.159-162
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    • 1997
  • Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.

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마이크로파 플라즈마 토치를 이용한 에어로졸 입자 분석 (Aerosol Particle Analysis Using Microwave Plasma Torch)

  • 김학준;박지호
    • 대한화학회지
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    • 제55권2호
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    • pp.204-207
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    • 2011
  • 입자의 화학적 성분을 제공하는 동시에 감도가 높고, 경제적이며, 공간을 덜 차지하는 입자 수 측정 시스템을 개 발하였다. 이 시스템은 마이크로파 플라즈마 토치를 이용하여 원자를 들뜬 상태로 만든 후 생성된 발광을 측정한다. 하나 의 입자로부터 생성된 발광의 파장으로부터 입자에 존재하는 원소를 확인할 수 있다. 발광의 세기로부터 입자의 화학적 성분뿐 아니라 입자의 크기 또한 측정할 수 있다. 장기적으로 이 시스템은 휴대가 가능하도록 만들어 현장에서 실시간으 로 대기에 존재하는 낮은 농도의 에어로졸 입자를 분석하는데 쓰일 수 있다.

전자파 플라즈마 토치를 이용한 이산화탄소와 메탄의 Syngas 합성 (Conversion of $CO_2$ and $CH_4$ to Syngas by Making Use of Microwave Plasma Torch)

  • Dong Hun, Shin;Yong Cheol, Hong;Han Sup, Uhm
    • 한국에너지공학회:학술대회논문집
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    • 한국에너지공학회 2004년도 추계 학술발표회 논문집
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    • pp.195-200
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    • 2004
  • Carbon dioxide ($CO_2$) and methane (CH$_4$) are two major greenhouse Bases. $CO_2$is a stack gas of many industrial processes and the main product of the hydrocarbon combustion. There is recent research interest on the synthesis gas (syngas) formation from $CO_2$ and CH$_4$, via the following reaction: CH$_4$+$CO_2$longrightarrow 2H$_2$+$CO_2$, in order to reduce the greenhouse effects and to synthesize various chemicals, Preliminary experiments were conducted on the conversion of $CO_2$ and CH$_4$ to syngas by making use of a microwave plasma torch at atmospheric pressure. Conversion rates of $CO_2$and CH$_4$ to hydrogen (H$_2$), carbon monoxide (CO) and higher hydrocarbons were investigated using Gas Chromatography (GC) and Fourier Transform Infrared (FTIR). The experimental data indicate that the main products were H$_2$, CO and small amount of higher hydrocarbons, such as ethylene (C$_2$H$_4$).

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MWPCVD법에 의한 다이아몬드 박막의 제조 및 결정성장 특성 (Preparation and Crystalline Growth Properties of Diamond Thin Film by Microwave Plasma CVD)

  • 김규식;박수길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.905-908
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    • 2000
  • The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

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