• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.97-102
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• 2000

We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.

• Progress in Superconductivity
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• 제4권1호
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• pp.64-67
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• 2002

The attenuation of millimeter waves (70-100 ㎓) propagating along Josephson Junction stripline had been measured by pattern recognition near gap voltage and proximity current bump. Test series arrays of 2000, 3000, and 4000 Josephson junctions with the area of $12\mu\textrm{m}$$\times$ $38\mu\textrm{m}$ had two sub-arrays with 50 Junctions at both ends. The arrays were fabricated with and without applying a plasma nitridation process to Nb ground plane. The effects of a nitridationprocess measured by the pattern recognition near gap voltage and proximity current bump were about 1.3-1.7 ㏈ and 1.6-1.8 ㏈, respectively. This means that the last sub-arrays with a nitridation process receive 26-34% more power than those without a nitridation process.

• 전기학회논문지
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• 제58권2호
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• pp.369-372
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• 2009

When measuring the luminous flux of a light source at the integrating sphere photometer, it can know the luminous flux to compare the standard lamp with the specimen lamp at the same location. But in case of PLS(plasma lighting system, microwave discharged lamp), that two lamps are cannot be the same location. If the reference illuminant and specimen lamp are cannot measure identical location, we should measure the variation of the luminous flux. For the outcome we can turn out a correction factor to revise and reflect it. But the better way is calibrate the specimen lamp locate the identical location of reference illuminant measured. In this thesis, we've test to find the correction factor for consider that change the measuring location. And it turns out the correction factor. From this, it presents the result to make a select for the reference illuminant which is against the illuminant type for newly produce.

• 한국진공학회지
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• 제15권2호
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• pp.117-138
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• 2006

지표면에서 플라즈마는 전기방전에 의하여 만들어낸다. 그래서 대부분의 플라즈마 발생은 1백만분의 1기압보다 더 낮은 기압에서 발생하고 있었다. 그러나 많은 플라즈마 응용은 고기압에서 발생한 플라즈마를 요구하고 있다. 진공펌프와 같은 고가의 장비를 피하기 위하여 과학자들은 1기압이나 그이상의 압력에서 플라즈마를 발생하는 연구를 하기 시작했다. 많은 량의 제료 공정, 환경보호와 개선, 그리고 고효율 에너지 창출과 이용 등의 분야에 플라즈마를 사용할 때에는 오직 더 많은 량의 플라즈마를 더욱 값싸게 만들 때에만 가능한 것이다. 우리는 따라서 고기압에서 플라즈마를 만들어내는 새로운 방법을 개발하고 이러한 플라즈마가 21세기 산업에 적용될 수 있는 새로운 기반을 구축하는 연구를 수행하고 있다. 이러한 기술은 미래의 재료 공정이나, 환경 그리고 에너지 분야에 지대한 영향을 미칠 것으로 생각한다.

• 한국응용과학기술학회지
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• 제24권1호
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• pp.1-9
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• 2007

It prepared the $TiO_2$ powder which has photo-catalytic activity in the visible-light by the wet process with titanium oxysulfate. The titanium $dioxide(TiO_2)$ by the wet process creates a new absorption band in the visible light region, and is expected to create photocatalytic activity in this region. Anatase $TiO_2$ powder which has photocatalytic activity in the visible light region, is treated using microwave and radio-frequency(RF) plasma. But, the $TiO_2$ powder for the visible light region, which also can be easily produced by wet process. The wet process $TiO_2$ absorbed visible light between 400nm and 600nm, and showed a high activity in this region, as measured by the oxidation removal of aceton from the gas phase. The AH-380 sample appears the yellow color to be strong, the catalytic activity in the visible ray was excellent in comparison with the plasma-treated $TiO_2$. The AH-380 $TiO_2$ powder, which can be easily produced on a large scale, is expected to have higher efficiency in utilizing solar energy than the plasma-treated $TiO_2$ powder.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.30-30
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• 2011

The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

• 전기화학회지
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• 제3권4호
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• pp.200-203
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• 2000

Microwave plasma chemical vapor deposition을 이용하여 붕소가 도핑된 전도성 다이아몬드 박막을 제조하였다. 탄소원으로는 아세톤과 메탄올을 사용하였으며, 붕소원으로는 $B_2O_3$를 사용하고, 운반가스로는 수소를 사용하였다. 이때 붕소의 도핑농도는 약 $10^2ppm\;(B/C)$이였다. Si 기질 각 부분의 온도와 플라즈마에서의 거리를 다르게 하기 위해서 Si 기질을 배치함에 있어 약$10^{\circ}$를 기울여 다이아몬드 박막을 성장시켰다. 실험결과 모두 동일한 조건 이였으나 같은 Si 기질 위에 높이에 따른 온도구배가 형성되었으며, 그에 따라 다이아몬드의 결정 또한 각기 달랐다. 다이아몬드 박막에 나타난 결정형태의 분포는 약 $3\~4$부분으로 나뉘어 있었다 제조된 다이아몬드 박막의 특성을 확인하기 위해 Raman spectrum을 이용해 다이아몬드의 결정성을 확인하였고, 표면의 형태를 관찰하기 위해 현미경을 사용하였다. 입자의 크기는 각기 다른 Si기질의 높이에 의한 온도구배로 인하여, 기질의 높이에 따라 서서히 달라졌다. 다이아몬드 박막의 Raman spectrum측정결과 $1334cm^{-1}$에서 강한 peak가 발견되었으며, 이것은 결정성 다이아몬드의 일반적인 특성 이였다. Si 기질 중 낮은 곳에 위치한 부분의 Raman spectrum은 비다이아몬드의 peak인 $1550cm^{-1}$ 부근에서 넓게 peak가 상승된 것이 관찰되었다.

• Journal of Magnetics
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• 제7권3호
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.435-435
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• 2010

A inclined slot-excited plasma source is newly designed and constructed for higher flux HNB(Hyperthermal Neutral Beam) generation. The present source is different from the vertical SLAN(SLot ANtenna) sources [1] in two aspects. One is that the slots are inclined, and the other is that the magnetic field is configured to a cusp type. These modifications are intended to make the source plasma operated in sub-milli-torr pressure regime and as thin as possible, both of which is to get higher HNB flux by decreasing the re-ionization rate of the reflected atoms from the neutralizer [2]. The plasma is generated in a quartz tube of internal diameter 170 mm enclosed in a aluminum application chamber of larger diameter 250 mm. The microwave power is fed to the plasma chamber by 8 inclined slots cut into the application chamber wall. The slots are coupled the chamber to a WR280 waveguide wound around it to form a ring resonator. In order to make two slots $\lambda_g/2$ apart in phase, the adjacent slots are rotated in opposite directions. The rotation angle of the slots are set to $60^{\circ}$ from the chamber axis. Between the quartz chamber and the aluminum cylindrical chamber 8 NdFeB magnets are equally spaced and fixed to form the cusp magnetic field confinement and ECR (Electron Cyclotron Resonance) field. In this presentation, the magnetic and electromagnetic simulations, and the measured plasma parameters are given for both the inclined and the vertical slot-excited plasma sources. We also discuss how the sources can be tailored to suit better-performing HNB sources.

• 방사성폐기물학회지
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• 제2권4호
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• pp.231-238
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• 2004

원자력 발전소에서 발생하는 고체 방사성 폐기물인 이온교환수지, 제올라이트, 활성탄 및 슬러지 에 포함된 성분 원소 분석을 위한 산분해 조건을 확립하였다. 방사성 폐기물의 분해 에는 흔합산을 이용한 밀폐형 극초단파 산분해법을 사용하였으며, 제안한 방법에 따른 산분해 후의 용액은 맑고 색이 없는 투명한 상태임을 확인할 수 있었다. 또한, 산분해 과정을 거친 각각의 용액 시료는 ICP-AES와 AAS를 사용하여 분석하였고, 모의 방사성 폐기물에 첨가한 5종의 금속 원소들은 $94{\%}$ 이상의 높은 회수율을 보여주었다. 화학적 특성을 고려하여 제안된 산분해 조건에 의해 용액화된 중${\cdot}$저준위 방사성 폐기물의 성분 원소 분석은 최적의 유리화 기술 개발을 위한 기초 자료로 유용하게 사용될 수 있을 것으로 판단된다.