• Title/Summary/Keyword: Microwave Plasma

Search Result 398, Processing Time 0.027 seconds

Growth of nickel-catalyzed carbon nanofibers using MPCVD method and their electrical properties

  • Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.14 no.1
    • /
    • pp.1-5
    • /
    • 2004
  • Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

Treatment of Refractory Melasma with Microwave-generated, Atmospheric-pressure, Non-thermal Nitrogen Plasma

  • Kim, Hyun-Jo;Kim, Heesu;Kim, Young Koo;Cho, Sung Bin
    • Medical Lasers
    • /
    • v.8 no.2
    • /
    • pp.74-79
    • /
    • 2019
  • Periorbital melasma is often refractory to treatment and highly associated with rebound hyperpigmentation or mottled hypopigmentation after laser treatment in Asian patients. In this report, we describe 2 patients with cluster-1 periorbital melasma and 1 patient with cluster-2 periorbital melasma who experienced remarkable clinical improvements after microwave-generated, atmospheric-pressure, non-thermal nitrogen plasma treatments. All patients exhibited limited clinical responses after combination treatments with topical bleaching agents, systemic oral tranexamic acid, and low-fluenced Q-switched neodymium (Nd):yttrium-aluminum-garnet (YAG) lasers. Low-energy nitrogen plasma treatment at 0.75 J elicited remarkable clinical improvement in the periorbital melasma lesions without post-laser therapy rebound hyperpigmentation and mottled hypopigmentation. We deemed that a single pass of nitrogen plasma treatment at 0.75 J induces mild microscopic thermal tissue coagulation and modification within the epidermis while preserving the integrity of the basement membrane in patients with periorbital melasma. Accordingly, nitrogen plasma-induced dermal tissue regeneration could play a role in the treatment of melasma lesions.

Beneficial Effects of Microwave-Induced Argon Plasma Treatment on Cellular Behaviors of Articular Chondrocytes Onto Nanofibrous Silk Fibroin Mesh

  • Jin, Soo-Chang;Baek, Hyun-Sook;Woo, Yeon-I;Lee, Mi-Hee;Kim, Jung-Sung;Park, Jong-Chul;Park, Young-Hwan;Rah, Dong-Kyun;Chung, Kie-Hyung;Lee, Seung-Jin;Han, In-Ho
    • Macromolecular Research
    • /
    • v.17 no.9
    • /
    • pp.703-708
    • /
    • 2009
  • Silk fibroin scaffolds were examined as a biomaterial option for tissue-engineered cartilage-like tissue. In tissue engineering for cartilage repair using a scaffold, initial chondrocyte-material interactions are important for the following cell behaviors. In this study, the surface of nanofibrous silk fibroin (NSF) meshes was modified by a microwave-induced argon plasma treatment in order to improve the cytocompatibility of the meshes used as cartilaginous grafts. In addition, the effects of a plasma treatment on the cellular behavior of chondrocytes on NSF were examined. The plasma treatment resulted in an increase in the hydrophilicity of NSF meshes suggesting that the cytocompatibility of the mesh might be improved. Furthermore, the human articular chondrocytes showed higher viability on the surface-modified NSF meshes. These results suggest that the surface modification of NSF meshes by plasma can enhance the cellular behavior of chondrocytes and may be used in tissue engineering.

A Study on the Microwave Electric-Field Focusing Waveguide Systems for Driving Plasma Visible Light (플라즈마 가시광 구동을 위한 초고주파 전계 집속형 도파관 시스템에 관한 연구)

  • Jeon, Hoo-Dong;Park, Eui-Joon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.20 no.3
    • /
    • pp.303-312
    • /
    • 2009
  • In this study, a waveguide system for focusing the electric field is presented to emit the microwave-driven plasma visible light. This system consists of a magnetron for the microwave power supply, the waveguide section for power propagation, and the mesh-type cavity reactor. The quartz bulb containing a dose of sulfur powder and buffer gas Ar is located in the reactor, and forced by the strongly concentrated electric field for generating and exciting the sulfur plasma. That is, the conductor tips are loaded on each inner wall of the waveguide and the reactor, and then the plasma bulb is positioned between the tips, hence focusing the strong electric field on the bulb. Furthermore the waveguide section is designed for minimizing the degradations of matching characteristics according to the variations of the electrical conductivities of plasma at the transitory phase for plasma generation, hence providing the stable operation. Finally, the 2.45 GHz aluminum waveguide system is constructed, and then experiments for emitting the visible light are performed by using 400 W-class magnetron, showing the validity of designed system.

Co-firing of Dielectric and Electrode with Conventional and Microwave Heating in Plasma Display Panel (전형적인 열처리와 마이크로웨이브 열처리에 따른 PDP용 전극과 투명 유전체의 동시 소성)

  • Hwang, Seong-Jin;Veronesi, Paolo;Leonelli, Cristina;Kim, Hyung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.463-463
    • /
    • 2008
  • The glass frit has been used in transparent dielectric, barrier rib and electrode of PDP (Plasma display panel). In PDP fabrication, the firing temperature of glass frit is normally 550~$580^{\circ}C$ with conventional heating. However, there are a problem that silver in electrode is diffused throughout the transparent dielectric. For inhibiting the Ag diffusion we considered use of the microwave heating. We investigated firing of glass frit compared between conventional and microwave heating. After firing by two types of heating, the diffusion of silver is determined using a optical microscope and UV-spectrometer. Based on the our results, the microwave heating should be a candidate to heating source for high efficacy in PDP.

  • PDF

Low Temperature Thermal Oxidation using ECR Oxygen Plasma (ECR 산소 플라즈마를 이용한 저온 열산화)

  • 이정열;강석원;이진우;한철희;김충기
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.32A no.3
    • /
    • pp.68-77
    • /
    • 1995
  • Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

  • PDF

Self Annealing Effects of Arsenic Ion Implanted Amorphous Carbon Films during Microwave Plasma Chemical Vapor Deposition (As 이온 주입된 비정질 탄소 박막의 마이크로플라즈마 화학기상증착법에 의한 자동 어닐링 효과에 관한 연구)

  • Cho, E.S.;Kwon, S.J.
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.1
    • /
    • pp.31-36
    • /
    • 2013
  • For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

Fabrication of Microwave PECVD with Linear Antenna for large-scale deposition processing, and Analysis of Ar plasma characteristics using Electrostatic Probe and Temperature Characteristics (대면적 증착용 선형 초고주파 플라즈마 장치 제작 및 정전 탐침법을 이용한 Ar 플라즈마 특성 분석과 온도 특성 분석)

  • Han, Moon-Ki;Seo, Kwon-Sang;Kim, Dong-Hyun;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.64 no.3
    • /
    • pp.422-428
    • /
    • 2015
  • A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.

Separation Technology of Pure Zirconia from Zirconsand by the Ar-H2 Arc Plasma Fusion and Sulfuric Acid Leaching with Microwave Irradiation (Ar-H2플라즈마 건식제련과 마이크로웨이브침출을 통한 지르콘샌드로부터 고순도 지르코니아 분리)

  • Lee, Jeong-Han;Hong, Sung-Kil
    • Resources Recycling
    • /
    • v.25 no.3
    • /
    • pp.49-54
    • /
    • 2016
  • In this study, zircon sand is separated into zirconia and silica by using the Ar-$H_2$ arc plasma refining. And then silica is removed from it by the microwave leaching method to produce a high pure zirconia. Plasma melting consist of two sequential processes; reduction process with Ar gas only followed by refining process with Ar-$H_2$ gas. After cooling in chamber. The solid phase obtained at $240^{\circ}C$ were found to be composed of 20% sulfuric acid solution. The solution was used as a leaching solution with microwave irradiation to obtain a high purity zirconia.