• Title/Summary/Keyword: Microwave Plasma

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Etching Characteristics of Fine Ta Patterns with Electron Cyclotron Resonance Chlorine Plasma

  • Kim, Sang-Hoon;Woo, Sang-Gyun;Ahn, Jin-Ho
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.97-102
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    • 2000
  • We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.

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Experimental Study on Microwave Attenuation in Josephson Junction Stripline (조셉슨접합 스트립라인의 마이크로파 감쇠에 대한 실험적인 조사)

  • 홍현권;박세일;김규태
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.64-67
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    • 2002
  • The attenuation of millimeter waves (70-100 ㎓) propagating along Josephson Junction stripline had been measured by pattern recognition near gap voltage and proximity current bump. Test series arrays of 2000, 3000, and 4000 Josephson junctions with the area of $12\mu\textrm{m}$$\times$ $38\mu\textrm{m}$ had two sub-arrays with 50 Junctions at both ends. The arrays were fabricated with and without applying a plasma nitridation process to Nb ground plane. The effects of a nitridationprocess measured by the pattern recognition near gap voltage and proximity current bump were about 1.3-1.7 ㏈ and 1.6-1.8 ㏈, respectively. This means that the last sub-arrays with a nitridation process receive 26-34% more power than those without a nitridation process.

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The verification of Luminous flux of Reference illuminant for New light source by the calculated correction factor (보정계수 산출에 의한 신광원용 표준램프 광속의 검증)

  • Hwang, Myung-Keun;Shin, Sang-Wuk;Yi, Chin-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.2
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    • pp.369-372
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    • 2009
  • When measuring the luminous flux of a light source at the integrating sphere photometer, it can know the luminous flux to compare the standard lamp with the specimen lamp at the same location. But in case of PLS(plasma lighting system, microwave discharged lamp), that two lamps are cannot be the same location. If the reference illuminant and specimen lamp are cannot measure identical location, we should measure the variation of the luminous flux. For the outcome we can turn out a correction factor to revise and reflect it. But the better way is calibrate the specimen lamp locate the identical location of reference illuminant measured. In this thesis, we've test to find the correction factor for consider that change the measuring location. And it turns out the correction factor. From this, it presents the result to make a select for the reference illuminant which is against the illuminant type for newly produce.

Atmospheric Plasma and Its Applications (대기압 플라즈마와 응용)

  • Uhm Han-Sup
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.117-138
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    • 2006
  • Plasmas can be made by electrical discharge on earth. Most of the plasmas on earth have been generated in low pressure environments where the pressure is less than one millionth of the atmospheric pressure. However, there are many plasma applications which require high pressure plasmas. Therefore, scientists start research on plasma generation at high pressure to avoid use of expensive vacuum equipments. Large-volume inexpensive plasmas are needed in the areas of material processing, environmental protection and improvement, efficient energy source and applications, etc. We therefore developed new methods of plasma generations at high pressure and carried out research of applying these plasmas to high tech industries representing 21 century. These research fields will play pivotal roles in material, environmental and energy science and technology in future.

Photocatalytic Activity of $TiO_2$ Powder with an Oxygen Deficiency in the Visible-Light Region (산소 결함형 $TiO_2$ 분말의 가시광에 대한 광촉매 활성)

  • Yang, Chun-Hoe
    • Journal of the Korean Applied Science and Technology
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    • v.24 no.1
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    • pp.1-9
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    • 2007
  • It prepared the $TiO_2$ powder which has photo-catalytic activity in the visible-light by the wet process with titanium oxysulfate. The titanium $dioxide(TiO_2)$ by the wet process creates a new absorption band in the visible light region, and is expected to create photocatalytic activity in this region. Anatase $TiO_2$ powder which has photocatalytic activity in the visible light region, is treated using microwave and radio-frequency(RF) plasma. But, the $TiO_2$ powder for the visible light region, which also can be easily produced by wet process. The wet process $TiO_2$ absorbed visible light between 400nm and 600nm, and showed a high activity in this region, as measured by the oxidation removal of aceton from the gas phase. The AH-380 sample appears the yellow color to be strong, the catalytic activity in the visible ray was excellent in comparison with the plasma-treated $TiO_2$. The AH-380 $TiO_2$ powder, which can be easily produced on a large scale, is expected to have higher efficiency in utilizing solar energy than the plasma-treated $TiO_2$ powder.

Fast Measurement using Wave-Cutoff Method

  • Seo, Sang-Hun;Na, Byeong-Geun;Yu, Gwang-Ho;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.30-30
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    • 2011
  • The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

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Crystalline Growth Properties of Diamond Thin Film Prepared by MPCVD

  • Park Soo-Gil;Kim Gyu-Sik;Einaga Yasuaki;Fujishima Akira
    • Journal of the Korean Electrochemical Society
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    • v.3 no.4
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    • pp.200-203
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    • 2000
  • Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

Magnetotransport Properties of Co-Fe/Al-O/Co-Fe Tunnel Junctions Oxidized with Microwave Excited Plasma

  • Nishikawa, Kazuhiro;Orata, Satoshi;Shoyama, Toshihiro;Cho, Wan-Sick;Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of Magnetics
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    • v.7 no.3
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    • pp.63-71
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    • 2002
  • Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

A Inclined Slot-excited Circular Plasma Source with a Cusp Magnetic Field

  • You, H.J.;Kim, D.W.;Koo, M.;Jang, S.W.;Jung, Y.H.;Lee, B.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.435-435
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    • 2010
  • A inclined slot-excited plasma source is newly designed and constructed for higher flux HNB(Hyperthermal Neutral Beam) generation. The present source is different from the vertical SLAN(SLot ANtenna) sources [1] in two aspects. One is that the slots are inclined, and the other is that the magnetic field is configured to a cusp type. These modifications are intended to make the source plasma operated in sub-milli-torr pressure regime and as thin as possible, both of which is to get higher HNB flux by decreasing the re-ionization rate of the reflected atoms from the neutralizer [2]. The plasma is generated in a quartz tube of internal diameter 170 mm enclosed in a aluminum application chamber of larger diameter 250 mm. The microwave power is fed to the plasma chamber by 8 inclined slots cut into the application chamber wall. The slots are coupled the chamber to a WR280 waveguide wound around it to form a ring resonator. In order to make two slots $\lambda_g/2$ apart in phase, the adjacent slots are rotated in opposite directions. The rotation angle of the slots are set to $60^{\circ}$ from the chamber axis. Between the quartz chamber and the aluminum cylindrical chamber 8 NdFeB magnets are equally spaced and fixed to form the cusp magnetic field confinement and ECR (Electron Cyclotron Resonance) field. In this presentation, the magnetic and electromagnetic simulations, and the measured plasma parameters are given for both the inclined and the vertical slot-excited plasma sources. We also discuss how the sources can be tailored to suit better-performing HNB sources.

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Determination of major and minor elements in low and medium level radioactive wastes using closed-vessel microwave acid digestion (밀폐형 극초단파 산분해법을 이용한 중${\cdot}$저준위 방사성폐기물의 성분 원소 분석)

  • Lee Jeong-Jin;Pyo Hyung-Yeal;Jeon Jong-Seon;Lee Chang-Heon;Jee Kwang-Yong;Ji Pyung-Kook
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.2 no.4
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    • pp.231-238
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    • 2004
  • The conditions are obtained for the decomposition of solid radioactive wastes, including ion exchange resin, zeolite, charcoal, and sludge from nuclear power plant. In the process of decomposing the radioactive wastes was used the microwave acid digestion method with mixed acid. The solution after acid digestion by the following method was colorless and transparent. Each solution was analyzed with ICP-AES and AAS and the recovery yield for 5 different elements added into the simulated radioactive wastes were over $94{\%}$. The elemental analysis of destructive low and medium level radioactive wastes by the proposed microwave acid digestion conditions concerning the chemical characteristics of each radioactive waste are expected to be useful basic data for development of optimal glass formulation.

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