• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.174-179
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• 2013

This paper presents a capacitor loaded tunable bandpass chip filter using multiple split ring resonators (MSRRs) with two transmission zeros. To obtain high selectivity and minimize the chip size, asymmetric feed lines are adopted to make a pair of transmission zeros located on each side of passband. Compared with conventional filters using cross-coupling or source-load coupling techniques, the proposed filter uses only two resonators to achieve high selectivity through a pair of transmission zeros. In order to optimize selectivity and sensitivity (insertion loss) of the filter, the effect of the position of asymmetric feed line on transmission zeros and insertion loss is analyzed. The SOI-CMOS switched capacitor composed of metal-insulator-metal (MIM) capacitor and stacked-FETs is loaded at outer rings of MSRRs to tune passband frequency and handle high power signal up to +30 dBm. By turning on or off the gate of the transistors, the passband frequency can be shifted from 4GH to 5GHz. The proposed on-chip filter is implemented in 0.18-${\mu}m$ SOI CMOS technology that makes it possible to integrate high-Q passive devices and stacked-FETs. The designed filter shows miniaturized size of only $4mm{\times}2mm$ (i.e., $0.177{\lambda}g{\times}0.088{\lambda}g$), where ${\lambda}g$ denotes the guided wave length of the $50{\Omega}$ microstrip line at center frequency. The measured insertion loss (S21)is about 5.1dB and 6.9dB at 5.4GHz and 4.5GHz, respectively. The designed filter shows out-of-band rejection greater than 20dB at 500MHz offset from center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.5
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• pp.413-420
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• 2009

We propose a novel feed network for a $2{\times}2$ array antenna to form a sectoral conical beam. The proposed feed network, which is a symmetrical structure, consists of four $90^{\circ}$ hybrids, a crossover, and four $90^{\circ}$ delay lines. To verify the performance of the feed network a $2{\times}2$ array antenna and the feed network are fabricated on a microstrip structure, and the radiation patterns are measured at the center frequency of 2.57 GHz. The maximum radiation is measured at the $45^{\circ}$ elevation angle and at the $45^{\circ}$, $135^{\circ}$, $225^{\circ}$, and $315^{\circ}$ azimuth angles depending on the choice of the input port of the feed network.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.1
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• pp.17-24
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• 2014

In this paper, we analysed coupling coefficient between dielectric resonator of high dielectric constant and microstrip line to design for low phase noise dielectric resonator by direct coupling. Also we analysed phase noise of dielectric resonance oscillator with parallel feedback circuit to complement Q by high dielectric constant. We obtained a result from high-stability dielectric oscillator which is optimum designed through analysis of dielectric resonance oscillator phase noise and coupling coefficient. The result is that the phase noise was -83.3dBc/Hz@1KHz at 20.25GHz when we used about 3.6 coupling coefficient and ${\epsilon}_r$=30 dielectric resonator of 20.25GHz dielectric resonance oscillator. As a result, we suggested the direct-connect design method by frequency multiplication mode to prevent phase noise loss at K-Band.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.857-860
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• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.79-85
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• 1999

In this paper, the resistive mixer for 5.86Hz wireless LAN, main part receiving system, was designed and implemented. The noise characteristics and the linearity in the base band was superior. For the use of local oscillator of mixer, dielectric resonator of stable output and temperature characteristics was designed. For the electrical tuning by the capacitance variation of varactor diode, the microstrip line and magnetic coupling characteristics of the dielectric resonance was used. It was obtained that gain of the proposed resistive mixer containing the RF cable loss, is -13.8dB, the conversion loss of frequency converter is -12 dB, and the output power of local oscillator is 1.67 dBm.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.2
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• pp.338-346
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• 2018

In this paper, a monopole antenna applicable to WLAN/WiMAX system is designed and fabricated. The proposed antenna is designed to have three lines and one slit based on microstrip feeding to have triple band characteristics. We optimized the lengths and slits of the three lines to obtain the required characteristics for this paper. The proposed antenna has $32.0mm(W2+W3){\times}47.1mm$ (L3+L4+L5+L8) on a dielectric substrate of $42.5mm(W1){\times}52mm(L1){\times}1.0mm$ size. From the fabrication and measurement results, bandwidths of 158 MHz (813 to 971MHz), 630 MHz (2.10 to 2.73GHz) and 1190 MHz (4.83 to 6.02GHz) were obtained based on the impedance bandwidth. The fabricated antenna also obtained the measured gain and radiation pattern in the required triple band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1633-1640
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• 2016

In this paper, we propose a open-ended rectangular microstirp patch antenna with fork-shaped feeding structure. This antenna extends the effective bandwidth by transforming single or multi resonant frequency and is designed planar monopole structure with microstrip line to satisfy the WLAN bands (2.4 - 2.484, 5.15 - 5.35, 5.25-5.825 GHz). The substrate is printed in 0.8 mm thickness on an FR-4 board. A commercial 3D simulation tool was used to analyze surface current and electromagnetic field distribution in order to analyze the operation mode and reconfiguration principle of antenna. According to the lengths of individual patches, simulated reflection loss was compared to obtain optimized values. When it was designed with the optimized values, it satisfied WLAN bands (2.380 - 2.710, 4.900 - 5.950 GHz), if the switch is off, and 2.4 WLAN band (2.380 - 2.710 GHz). From the fabricated and measured results, measured results of return loss, gain and radiation patterns characteristics displayed for operating bands.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.2 no.2
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• pp.19-24
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• 1991

This paper propose a new taegeuk shaped directional couper and verify the possibility of high power division rate in those directional coupler through the experiments. We took the taegeuk shaped structure in those proposed directional coupler to utilize a $3\lambda/4$ section of hybrid ring directional coupler actively, and calculated the branch admittances, which satisfied the condition of perfect matching and isolation in the center frequency, by even odd mode analyzing methodes. On the result, we knew that it can be realized a much higher power division rate than reported result in same circuit area within the producible resistance limit in the microstrip line, made the taegeuk shaped directional couplers with 0, 8, 16 dB power split ratio in the 10 GHz frequency using CGP - 502 plate, and confirmed the validity of theory through the experiments.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.