• Design & Manufacturing
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• 제2권6호
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• pp.11-16
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• 2008

In order to satisfy the customer's variant needs for a product quality in recent years, a demand for developing higher precision machining technologies in a lot of application areas such as automobile, cellular phone and semiconductor has been increased more and more. Micro-magnetic induced polishing(${\mu}-MIP$) process is one of these precision technologies. In this study, to verify the parameters' effect of the ${\mu}-MIP$ process on the surface roughness improvement of the inclined workpiece, well planned experiment which was called the design of experiments was carried out. Considered parameters were spindle speed, inductor current, abrasive configuration and working gap between the workpiece and the solid tool. As a result, it was seen that the inductor current and the working gap greatly affected the surface roughness improvement. And to predict the surface roughness of the inclined workpiece, S/N ratio and first-order response surface model was developed.

• 한국정밀공학회지
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• 제23권1호
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• pp.113-120
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• 2006

This paper proposed the control algorithm fur aspheric surface grinding and was verified by the experiment. The functions of the algorithm were simultaneous control of the position and interpolation of the aspheric curve. The non-linear formula of the tool position was derived from the aspheric equations and the shape of the tool. The function was partitioned by an certain interval and the control parameters were calculated at each control section. The movement in a session was interpolated with acceleration and velocity. The position error was feed-backed by rotary encorder. The concept of feedback algorithm was correcting position error by increasing or decreasing the speed. In the experiment, two-axis machine was controlled to track the aspheric surface by the proposed algorithm. The effect of the control and process parameters was monitored. The result showed that the maximum tracking error was under sub-micro level for the concave and convex surfaces.

• Restorative Dentistry and Endodontics
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• 제16권2호
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• pp.1-17
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• 1991

The purpose of this study was to analyze the in vivo amalgam corrosion products qualitatively. 30 molars with large, intact amalgam restorations were selected. All the restorations were more than 5 years old. Twenty of the removed amalgams were embedded in acrylic resin block. The exposed surfaces of fifteen embedded amalgams were polished by amalgam polishing kit, and the rest were observed without polishing. The remaining 10 amalgams were fractured centrally and perpendiculary to the occlusal surface with a wire-cutter. After all specimens were cleaned ultrasonically in distilled water, each surface was examined under S.E.M. and E.D.A.X. (Energy Dispersive Micro X-ray Analyzer) to determine the morphology and chemical nature of the corrosion products. The following results were obtained: 1. The surfaces of the unpolished amalgam restorations were covered with thin amorphous layer of Sn-Ca-P-S complex with numerous cracks. 2. In the conventional amalgams, the major corrosion products were Sn-Cl phases however, tin oxide phases were also observed. 3. Only tin oxide phase was identified in the high copper amalgam, but it was less frequently observed than in the conventional amalgam. 4. It was easier to observe the corrosion product morphology in the fractured surfaces than in the polished ones. The morphologies of the corrosion product crystals looked like a stack of slightly bended plates in the Sn-Cl phases and polyhedra or polygonal prisms in the tin oxide phases.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.787-792
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• 2005

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.119-120
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• 2008

ILD CMP process has been well accepted for the planarization of the dielectric oxide film and becomes a critical process in ULSI manufacturing due to the rapid shrinkage of the design rule for the device. In total manufacturing process steps for a device, the proportion of ILD CMP process has been gradually increased. Ever since ILD CMP has been introduced, the scratches have been a major defects on polished surfaces which cause the electrical shorts between vias or metal lines [1,2]. It was reported that micro-scratches are caused by large, irregularly shaped particles during CMP process. Therefore, most of the CMP users have used < 5 m POU filter to remove and reduce the scratch source from the slurry. However, the scratch has always been the biggest concern in ILD polishing whatever preventive actions are taken. Silica and ceria slurries are widely used for ILD CMP process. There are not much differences in generated scratches and their formation mechanism. In this study, the scratches were investigated as a function of polishing conditions with possible explanation on formation mechanism in ILD CMP.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국입자에어로졸학회지
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• 제9권4호
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• pp.261-269
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• 2013

The chemical mechanical polishing (CMP) process is widely used in semiconductor manufacturing process for planarization of various materials and structures. Point-of-use (POU) filters are used in most of the CMP processes in order to reduce the unwanted micro-scratches which may result in defects. The performance of the POU filter is depends on type and size of the abrasives used during cleaning process. For this reason, there is a need to evaluate POU filters for their filtration efficiency (FE) with different types of abrasives. In this study, we developed filter test system to evaluate the FE of POU using ceria and silica abrasives (slurry). The POU filter is roll type capsule filter with retention size of 0.2 ${\mu}m$. Two POU filters of different make are evaluated for FE. We observed that both POU filters show similar filtration efficiency for silica and ceria slurry. Results reveal that the ceria slurry and the colloidal silica particle are removed not only by mechanical way but also hydrodynamic and electrostatic interaction way.

• Restorative Dentistry and Endodontics
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• 제25권3호
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• pp.482-486
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• 2000

The purpose of the present study was first, to evaluate the relationship between composite surface conversion and surface discoloration, second, to know if there was difference in surface discoloration between celluloid-strip-finished composite surface and polished surface. In addition, the discoloration of composite surface was also evaluated with visual inspection or digital camera with high resolution monitor, Z100, Tetric Ceram, Spectrum, and Aelitfil were used. The composite surfaces were celluloid-strip finished (group 1), polished (group 2), celluloid-strip finished under nitrogen gas purging (group 3) or only light cured without finishing or polishing under nitrogen gas purging (group 4). The microhardness of each samples were also measured in each group. The samples of each group were also divided into 4 subgroup whether they were immediately placed in disclosing solution (0.2% Elythrosin, pH 7.0) (subgroup1), 1 day after light curing(subgroup 2), 3day after light curing(subgroup 3) or 7 day after light curing(subgroup 4). The computer controlled spectrophotometer was used to determine CIELAB coordinates ($L^*$, $a^*$, $b^*$). The amounts of color difference were compared. The results were as follows; 1. There was no difference in discoloration between celluloid strip finished composite surface and polished surface. 2. The samples discolored more when they were placed in disclosing solution immediately after polymerization than other groups. 3. When the samples were light cured under nitrogen gas purging and without polishing process, they discolored more than other groups even though they showed higher micro hardness. 4. With visual inspection or digital camera, only a limited information was available in detecting composite surface discoloration.

• 한국표면공학회지
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• 제49권3호
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• pp.286-300
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• 2016

Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.