• Proceedings of the KSME Conference
• /
• 2001.06a
• /
• pp.567-572
• /
• 2001

In order to investigate the fracture behaviors(penetration modes) and resistance to penetration during ballistic impact of Titanium alloy laminates and nitrified Titanium alloy laminates which were treated by PVD(Physical Vapor Deposition) method, ballistic tests were conducted. Evaporation, sputtering, and ion plating are three kinds of PVD method. In this research, Ion plating was used to achieve higher surface hardness and surface hardness test were conducted using a Micro vicker's hardness tester. Resistance to penetration is determined by the protection ballistic limit($V_{50}$), a statistical velocity with 50% probability for complete penetration. Fracture behaviors and ballistic tolerance, described by penetration modes, are respectfully observed at and above ballistic limit velocities, as a result of $V_{50}$ test and Projectile Through Plates (PTP) test methods. PTP tests were conducted with $0^{\circ}$ obliquity at room temperature using 5.56mm ball projectile. $V_{50}$ test with $0^{\circ}$ obliquity at room temperature were conducted with projectiles that were able to achieve near or complete penetration during PTP tests. Surface hardness, resistance to penetration, and penetration modes of Titanium alloy laminates are compared to those of nitrified Titanium alloy laminates.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.701-705
• /
• 2002

In order to realize full color display, two approaches were used. The first method is the patterning of red, green, and blue emitters using a selective deposition. Another approach is based on a white-emitting diode, from which the three primary colors could be obtained by micro-patterned color filters. White-light-emitting organic light emitting devices (OLEDs) are attracting much attention recently due to potential applications such as backlights in liquid crystal displays (LCDs) or other illumination purposes. In order for the white OLEDs to be used as backlights in LCDs, the light emission should be bright and have Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.33, 0.33). For obtaining white emission from OLEDs, different colors should be mixed with proper balances even though there are a few different methods for mixing colors. In this study, we will report a white organic electroluminescent device based on an incomplete energy transfer. In which the blue and green emission come from the same layer via incomplete energy transfer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.362-363
• /
• 2005

The objectives of this paper are to achieve good planarization of the deposited film and to improve deposition efficiency of multi-layer structures by using surface-micromaching process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages and disadvantages of CMP for MEMS structures are observed respectively by using the test patterns with structures larger than 1 um line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of slurries: ILD1300 and Nalco2371. And then, the experiments were conducted based on the pretest.

• Journal of Sensor Science and Technology
• /
• v.18 no.2
• /
• pp.147-153
• /
• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.12
• /
• pp.126-134
• /
• 2003

In order to investigate the effect of surface treatment in Aluminium alloy and Titanium alloy which are used to armor material during ballistic impact, a ballistic testing was conducted. Anodizing was used to achieve higher surface hardness of Aluminium alloy and Iron plating in PVD(Physical Vapor Deposition) method was used to achieve higher surface hardness of Titanium alloy. Surface hardness test were conducted using a Micro victor's hardness tester. Ballistic resistance of these materials was measured by protection ballistic limit(V-50), a statical velocity with 50% probability penetration. Fracture behaviors and ballistic tolerance, described by penetration modes, are respectfully observed from the results of V-50 test and Projectile Through Plates (PTP) test at velocities greater than V-50. PTP tests were conducted with 0$^{\circ}$obliquity at room temperature using 5.56mm ball projectile. V-50 tests were conducted with 0$^{\circ}$obliquity at room temperature with projectiles that were able to achieve near or complete penetration during PTP tests. Surface hardness, resistance to penetration. and penetration modes of surface treated alloy laminates are compared to those of surface non-treated alloy laminates. A high speed photography was used to analyze the dynamic perforation phenomena of the test materials.

• Journal of the Korean Society for Heat Treatment
• /
• v.13 no.2
• /
• pp.91-97
• /
• 2000

The structure and mechanical properties of TiN and TiCN thin films deposited on STD61 steel substrates by the RF-sputtering methods has been studied by using XPS, XRD, micro-hardness tester, scratch tester, and wear-resistance tester. XPS results showed that the TiCN thin film formed with chemical bonding state. The TiN thin films grew with (111) orientation having the lowest strain energy by compressive stress, whereas the TiCN thin films grew with both (111) and (200) orientation, but (200) orientation having the lowest surface energy becomes dominant as carbon contents increase. The pre-etching treatment of substrate did not affect on the preferred orientation of thin films, but it played an important role in improving mechanical properties of thin films such as the hardness, adhesion and wear- resistance. Especially, the TiCN thin films showed the superior wear resistances due to high hardness and low friction coefficient compared with TiN thin films.

• Journal of the Korean institute of surface engineering
• /
• v.30 no.4
• /
• pp.255-261
• /
• 1997

Thin film batteries can be used as a micro power source for electronic in which minute power is needed. In this study, lithium phosphorous oxynitride(LIPON) thin films were deposited as an eletrolyte for lithium ion batteries using RF magentron sputtering of lithium phosphate in N2. Ti was also added into the LIPON films as a second network former to enhance the ioinc conductivity of the films. The optimum conditions for LIPON film deposition were sought and the electrolyte with the conductivity of $2.5 \times 10^{-6}$S/cm was obtained at the condition of RF power 4.4 W/$\textrm{cm}^2$, process pressure 10 mtorr and pure nitrogen ambience. Furthermore, the conductivity of LIPON films was increased from $2.5 \times 10^{-6}$S/cm to $8.6 \times 10^{-6}$S/cm by the doping of 2.4at.% Ti. It was also found that by adding Ti to LIPON films, Li content was increased and nitrogen content that reported having the cross-linking effect on LIPON films was also increased as confirmed XPS.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.5
• /
• pp.190-195
• /
• 2011

Diamond-like carbon (DLC) has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion on the metal substrates because of weak bonding between DLC film and the metal substrate. The purpose of this study is to enhance an adhesion of DLC film. For improving adhesion, the substrate was treated by active screen plasma nitriding before DLC film deposing. Nitrided substrates were investigated by Glow Discharge Spectrometer (GDS), Micro-Vickers Hardness. DLC films were deposited on several metals by linear ion source, and characteristics of the films were investigated using nano-indentation, Field Emission Scanning Electron Microscope (FESEM). The adhesion was measured by scratch tester. The adhesion of DLC films was increased when nitriding layer was formed before DLC deposition. Therefore, the adhesion of DLC film can be enhanced as increasing the hardness of materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.8
• /
• pp.732-736
• /
• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$