• Bulletin of the Korean Chemical Society
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• 제33권6호
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• pp.1993-1997
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• 2012

Mg-doped ZnO one-dimensional (1D) nanostrutures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Mg-doped ZnO nanostructures functionalized with Pt to CO gas at $100^{\circ}C$ were examined. The diameters of the 1D nanostructures ranged from 80 to 120 nm and that the lengths were up to a few tens of micrometers. The gas sensors fabricated from multiple networked Mg-doped ZnO nanowires functionalized with Pt showed enhanced electrical response to CO gas. The responses of the nanowires were improved by approximately 70, 69, 111, and 81 times at CO concentrations of 10, 25, 50, and 100 ppm, respectively. Both the response and recovery times of the nanowire sensor for CO gas sensing were not nearly changed by Pt functionalization. It also appeared that the Mg doping concentration did not influence the sensing properties of ZnO nanowires as strongly as Pt-functionalization. In addition, the mechanism for the enhancement in the CO gas sensing properties of Mg-doped ZnO nanowires by Pt functionalization is discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.96-96
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• 2007

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

• 한국재료학회지
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• 제30권10호
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.141-145
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• 2014

Tubular-shaped ZnO crystals were synthesized by thermal evaporation technique under air atmosphere. Mixture of Zn and Mg powder was used as the source material. The thermal evaporation and oxidation of Zn/Mg mixture were carried out for 1 hr at $1,000^{\circ}C$ and $1,200^{\circ}C$ under in air under atmospheric pressure. When only Zn powder was used as a source material, tetrapod-shaped ZnO crystals were synthesized. This provides that Mg played a key role in the formation of the tubular-shaped crystals. SEM images showed that the tubular-shaped ZnO crystals grew along [0001] direction. XRD spectrum revealed that the ZnO tubes had hexagonal wurtzite structure. Two emission peaks at 380 nm and 510 nm were observed in the room temperature cathodoluminescence spectrum.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3453-3458
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• 2011

The $Mg_xZn_{1-x}O$ thin films with the various content ratio ranging from 0 to 0.4 were prepared by sol-gel spincoating method. To investigate the effects of content ratio on the structural and optical properties of the $Mg_xZn_{1-x}O$ thin films, scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out. With increase in the content ratio, the grain size of the $Mg_xZn_{1-x}O$ thin films was increased, however, at the content ratio above 0.2, MgO particles with cubic structure were formed on the surface of the $Mg_xZn_{1-x}O$ thin films, indicating that the Mg content exceeded its solubility limit in the thin films. The residual stress of the $Mg_xZn_{1-x}O$ thin films is increased with increase in the Mg mole fraction. In the PL investigations, the bandgap and the activation energy of the $Mg_xZn_{1-x}O$ thin films was increased with the Mg mole fraction.

• 청정기술
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• 제22권2호
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• pp.89-95
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• 2016

화장품이나 타이어에 주로 사용되는 ZnO 나노입자에 대한 나노위해성 문제가 대두되고 있다. 이에 본 연구에서는 수계상에 존재하는 ZnO 나노입자에 대한 제거 및 생물학적 독성평가를 실시하였다. 송사리(O. Latipes) 수정란을 이용한 단기 노출평가에서는 5 mg L⁻¹에서는 일부 개체에서 기형이 관찰되었고, 10 mg L⁻¹에서 성장지연에 의한 부화율저감이 관찰되었다. 이러한 결과를 바탕으로 ZnO 나노입자가 수생생물종에게 독성을 보인다는 것을 확인하고, 이를 제거하기 위한 방법인 침전법을 제안하였다. Na₂S와 Na₂HPO₄를 이용하여 ZnO를 ZnS와 Zn₃(PO₄)₂로 전환시켜 침전시켰으며, 이들의 침전에 의한 제거율은 거의 100%에 이르렀다. 또한 해당 침전물 대한 물벼룩(D. magna) 급성독성 평가에서 어떠한 독성 영향도 찾지 못하였다. 이는 ZnO의 황 및 인처리를 통한 변환이 독성 감소에 효과적이었음을 나타낸다.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• Metals and materials international
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• 제24권6호
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• pp.1241-1248
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• 2018

The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) $SiO_2$-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at $460^{\circ}C$ and the variation in the contact angles (${\theta}_c$) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the $a-SiO_2$-covered steel exhibited nonreactive, nonwetting (${\theta}_c>90^{\circ}$) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the $a-SiO_2$ layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the $a-SiO_2$ layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and $SiO_2$, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.17.1-17.1
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• 2006