• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.330-337
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• 2005

La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes in which Mg site was partially substituted by Fe, Co or Ni (0.05, 0.1, 0.15 at.％) were fabricated by conventional solid-state reaction and their sintered densities were above 94％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The ac complex impedance were measured at 400。C to l000。C in air and fitted with a Solatron ZView program. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes substituted by Fe, Co or Ni was higher than that of pure La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.05/Ni/sub 0.15/O/sub 3-δ/ electrolyte was 3.4×10/sup -2/ Scm/sup -1/ at 800。C and the highest value of the whole electrolytes.

• 한국재료학회지
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• 제24권12호
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• pp.658-662
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• 2014

$Eu^{2+}/Dy^{3+}$-doped $Sr_2MgSi_2O_7$ powders were synthesized using a solid-state reaction method with flux ($NH_4Cl$). The broad photoluminescence (PL) excitation spectra of $Sr_2MgSi_2O_7:Eu^{2+}$ were assigned to the $4f^7-4f^65d$ transition of the $Eu^{2+}$ ions, showing strong intensities in the range of 375 to 425 nm. A single emission band was observed at 470 nm, which was the result of two overlapping subbands at 468 and 507 nm owing to Eu(I) and Eu(II) sites. The strongest emission intensity of $Sr_2MgSi_2O_7:Eu^{2+}$ was obtained at the Eu concentration of 3 mol%. This concentration quenching mechanism was attributable to dipole-dipole interaction. The $Ba^{2+}$ substitution for $Sr^{2+}$ caused a blue-shift of the emission band; this behavior was discussed by considering the differences in ionic size and covalence between $Ba^{2+}$ and $Sr^{2+}$. The effects of the Eu/Dy ratios on the phosphorescence of $Sr_2MgSi_2O_7:Eu^{2+}/Dy^{3+}$ were investigated by measuring the decay time; the longest afterglow was obtained for $0.01Eu^{2+}/0.03Dy^{3+}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1353-1354
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• 2006

The dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) and MgO-doped BST ceramics were investigated for tunable microwave applications by sol-gel method. The effects of MgO mixing with BST. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST Phase transition peak to a lower temperature. MgO-substituted BST and MgO-mixed phases exhibit homogeneous and broadened BST phase transition peaks. Mg substitution into BST has a significant effect on the grain sife reduction. Dielectric constant and loss is inhanced with decrease MgO dopant.

• 한국세라믹학회지
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• 제24권2호
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• pp.117-122
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• 1987

Glass forming ranges in the AlF3-(Mg＋Sr＋Ba)F2-P2O5 system are studied and ultraviolet transmission, infrared transmission, coefficient of refractive index, thermal expansion coefficient, density and chemical durability of the glasses are determined. Glass forming range is restricted MgF2 0-10wt%, SrF2 10-50wt%, BaF2 10-40wt% in this system. While BaF2 is substituted by SrF2, density and refractive index are decreased, micro hardness and thermal expansion coefficient are increased according to the increasing of SrF2 at fixed MgF2 contents. These samples represent high transmittance(93%) from 400nm to 3800nm and chemical durability of these samples show less than 0.3mg/$\textrm{cm}^2$$.$hy by weightloss.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1485-1487
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• 2002

The 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the 0.96Mg$TiO_3$-0.04Sr$TiO_3$ceramics with $V_2O_5$(5wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature, the grain size was increased and three types of grains were exhibited: larger circular grain, small square grain and lapth-shaped grain. In the case of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $15.24{\sim}18.55$, $22,890{\sim}42,100$GHz, -24.5${\sim}$+2.414ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.286-286
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• 2007

Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO 후막 interdigital 커패시터를 연구하였다. Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO의 후막을 $Al_2O_3$ 기판 위에 형성하기 위하여 스크린 프린팅 방법을 이용하였다. $BaSrTiO_3$의 세라믹 물질은 높은 유전율(1MHz에서 500이상)과 낮은 유전 손실(1MHz에서 0.01)값을 가지고 있는 반면, $1350^{\circ}C$의 높은 온도에서 소결되는 단점이 있다. 따라서 본 연구에서는 $BaSrTiO_3$ 세라믹 물질의 유전특성을 향상시키고 $1350^{\circ}C$의 높은 소결온도를 낮추기 위해서, MgO(30wt%)와 Li(3wt%)을 $BaSrTiO_3$에 첨가하였다. 그리고 10um의 후막을 $Al_2O_3$ 기판 위에 스크린 프린팅 방법을 통해 형성한 후, 50um finger gap의 interdigital 커패시터를 Ag 전극을 이용하여 제작하였다. 샘플을 제작하기 전에, Frequency와 유전율의 상관관계를 알아보기 위해 3D simulator를 통해 시뮬레이션 하였고, 주파수와 온도별 유전 특성, 구조와 전암-전류에 대한 특성을 본 연구의 결과를 통해 토의 할 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1992년도 제3회 학술발표회 논문개요집
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• pp.35-35
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• 1992

• 한국결정성장학회지
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• 제33권6호
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• pp.261-267
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• 2023

마이크로파 유전체 적용을 위해 (Ca, Sr)(Zr, Ti)O₃ (CSZT) 계에서 MgO 첨가에 따른 결정 구조, 미세 구조, 및 유전 특성을 연구하였다. 고상 반응법을 통해 합성된 CSZT 분말은 orthorhombic 단일상을 형성하였다. CSZT의 시편을 각각 1200℃, 1300℃ 및 1400℃에서 소결하였고, 소결 후 모든 시편은 orthorhombic 단일상을 확인하였다. 또한 모든 소결 시편은 온도가 증가함에 따라 입자 크기가 증가하였다. 1 mol% MgO를 첨가한 시편의 경우도 소결 이후에 orthorhombic 구조를 갖는 것을 확인하였다. EDS 분석을 통해 1400℃에서 소결 중에 이차상이 형성된 것을 확인하였다. MgO 첨가된 CSZT의 입자크기분포와 치밀화는 첨가하지 않은 경우와 거의 유사했으나, 입자크기분포가 좁아지며 균일해지는 것을 확인하였다. MgO 첨가된 CSZT는 1 k Hz에서 ε_r = 34.14, tanδ = 0.00047, τ_ε = -3.58 ppm/℃로 우수한 저손실 유전 특성을 가졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.430-433
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• 2001

The $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1300^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_{3}$ and ilmenite $MgTiO_{3}$ structures were coexisted in the $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics. The dielectric constant$(\varepsilon_{r})$ was increased with addition of Ce. The temperature coefficient of resonant frequency$(\Gamma_{f})$ was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the $0.96MgTiO_{3}-0.04SrTiO_{3}+0.2Ce$ ceramics was near zero, where the dielectric constant, quality factor, and $\Gamma_{f}$ were 20.68, 50,272 and ${-0.5ppm/^{\circ}C}$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.430-433
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• 2001

The 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1300$^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures were coexisted in the 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics. The dielectric constant($\varepsilon$$\sub$r/) was increased with addition of Ce. The temperature coefficient of resonant frequency($\tau$$\sub$f/) was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the 0.96MgTiO$_3$-0.04SrTiO$_3$+0.2Ce ceramics was near zero, where the dielectric constant, quality factor, and $\tau$$\sub$f/ were 20.68, 50, 272 and -0.5pm/$^{\circ}C$, respectively.