• Title/Summary/Keyword: MgO film

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Effects of Hydroxide and Silicate ions on the Plasma Electrolytic Oxidation of AZ31 Mg Alloy (AZ31 마그네슘 합금의 플라즈마전해산화 피막 형성에 미치는 수산화 이온 및 규산 이온의 영향)

  • Moon, Sungmo;Yang, Cheolnam;Na, Sangjo
    • Journal of the Korean institute of surface engineering
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    • v.47 no.4
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    • pp.147-154
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    • 2014
  • Formation behavior of PEO (Plasma Electrolytic Oxidation) films on AZ31 Mg alloy was studied in aqueous solutions containing various concentrations of hydroxide ion ($OH^-$) and silicate ion ($SiO_3{^{2-}}$) by voltage-time curves, and corrosion resistance of the PEO film-covered specimen was investigated by immersion test in 0.5 M NaCl solution. From the analyses of the voltage-time curves, it is suggested that two different types of anions are essentially needed for the formation of PEO films on AZ31 Mg alloy: film formation agent and local film breakdown agent. $SiO_3{^{2-}}$ ion acts only as a film formation agent but $OH^-$ ion acts not only as a film formation agent but also film breakdown agent. The PEO films prepared on AZ31 Mg alloy in alkaline silicate solution showed very good corrosion resistance without any pitting or filiform corrosions up to 480 h of immersion in 0.5 M NaCl.

Texturing of YBa$_2Cu_3O_x$ thick film on MgO(001) single crystal (YBa$_2Cu_3O_x$ 후막의 단결정 MgO(001) 위에서의 배향화)

  • Kim, Eu-Gene;Kim, Myeong-Hui;Han, Young-Hee;Sung, Tae-Hyun;Kim, Sang-Joon;No, Kwang-Soo
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.271-274
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    • 1999
  • We are investigating epitaxially grown YBa$_2Cu_3O_x$(123) on MgO single crystal by partial melting process for high power application. After fabricating of BaCuO$_2$(011), Y$_2BaCuO_5$(211) powder, we made YBa$_2Cu_3O_x$(123) Paste with just mixing of (211), (011) and CuO(001) powders. Screen printing method was used to coat YBa$_2Cu_3O_x$(123) paste on MgO single crystal. To reduce the reaction in low temperature, rapid heating was conducted at partial melting temperature. The film was analysed with the difference of cooling-rate, thickness, reaction temperature by XRD, SEM, in-plane alignment, out-of-plane alignment, temperature-resistivity characteristics.

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State-selective Dissociation of Water Molecules on MgO Films Using LT-STM

  • Shin, Hyung-Joon;Jung, J.;Motobayashi, K.;Kim, Y.;Kawai, M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.112-112
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    • 2011
  • The interaction of water molecules with solid surfaces has been a subject of considerable interests, due to its importance in the fields from atmospheric and environmental phenomena to biology, catalysis and electrochemistry [1,2]. Among various kinds of surfaces, a lot of theoretical and experimental studies have been performed regarding water on MgO(100), however, to date, there has been no direct observation of water molecules on MgO by scanning tunneling microscope (STM) as compared with those on metal surface. Here, we will present the direct observation and manipulation of single water molecules on ultrathin MgO(100) films using low-temperature scanning tunneling microscope (LT-STM) [3]. Our results rationalize the previous theoretical predictions of isolated water molecules on MgO including the optimum adsorption sites and non-dissociative adsorption of water. Moreover, we were able to dissociate a water molecule by exciting the vibrational mode of water, which is unattainable on metal surfaces. The enhanced residual time of tunneling electrons in molecules on the insulating film is responsible for this unique pathway toward dissociation of water.

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Piezoelectric properties and microstructure of 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3thick film with particle size distribution (입자 크기 분포에 따른 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3 후막의 미세구조 및 압전특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Chong-Yun;Yoon, Seok-Jin
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.418-424
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    • 2008
  • The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

Effect of MgO Deposition Condition on the Discharge Characteristic of AC-PDP (AC-PDP에서 MgO 증착조건에 따른 패널특성 연구)

  • Jeong, Joo-Young;Cho, Sung-Yong;Lee, Don-Kyu;Lee, Hae-June;Lee, Ho-Jun;Park, Chung-Hoo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.8
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    • pp.1566-1571
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    • 2009
  • The discharge electrodes in ac PDP are coated with dielectric layer, and transparent MgO thin films are deposited on the dielectric layer. The main role of the MgO thin films in ac PDP is to protect the dielectric layer from sputtering by ion bombardment in the glow-discharge plasma. An additional important role of the MgO thin film is the high secondary electron emission coefficient which leads the low firing voltage and low cost of the PDP. In this paper, we investigated the relations of the crystal orientation about deposition thickness, deposition rate, temperature of substrate, and distance between the MgO tablet and the substrate. Additionally, we investigated the discharge characteristics of the AC PDP using nano-powder MgO tablet

Synthesis of ternary ZnMgO nanostructures through thermal evaporation (열기상증착법을 이용한 3원계 MgZnO 나노구조의 합성)

  • Kong, Bo-Hyun;Kim, Dong-Chan;Cho, Hyung-Koun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.184-185
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    • 2006
  • Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

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Formation Behavior and Properties of PEO Films on AZ91 Mg Alloy in 0.1 M NaOH + 0.05 M NaF Solution Containing Various Na2SiO3 Concentrations (AZ91 마그네슘 합금의 플라즈마 전해산화 피막 형성 및 물성에 미치는 0.1 M NaOH + 0.05 M NaF 용액 중 Na2SiO3 농도의 영향)

  • Kwon, Duyoung;Song, Pung-Keun;Moon, Sungmo
    • Journal of the Korean institute of surface engineering
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    • v.53 no.2
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    • pp.59-66
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    • 2020
  • Effects of Na2SiO3 concentration added into 0.1 M NaOH + 0.05 M NaF solution on the formation behavior and properties of PEO films on AZ91 Mg alloy were investigated under 1200 Hz of alternating current (AC) by voltage-time curves, in-situ observation of arc generation behavior and measurements of film thickness, surface roughness and micro vickers hardness. In the absence of Na2SiO3 in the 0.1 M NaOH + 0.05 M NaF solution, about 4 ㎛ thick PEO film was formed within 1 min and then PEO film did not grow but white spots were formed by local burning. Addition of Na2SiO3 up to 0.2 M caused more increased formation voltage and growth of PEO film with uniform generation of arcs. Addition of Na2SiO3 from 0.2 M to 0.4 M showed nearly the same voltage-time behavior and uniform arc generation. Addition of Na2SiO3 more than 0.5 M resulted in a decrease of formation voltage and non-uniform arc generation due to local burning. PEO film growth rate increased with increasing added Na2SiO3 concentration but maximum PEO film thickness was limited by local burning if added Na2SiO3 concentration is higher than 0.5 M. Surface roughness of PEO film increased with increasing added Na2SiO3 concentration and appeared to be proportional to the PEO film thickness. PEO film hardness increased with increasing added Na2SiO3 concentration and reached a steady-state value of about 930 HV at more than 0.5 M of added Na2SiO3 concentration.

The Characteristics Depending on the Annealing Conditions in the PDP Vacuum In-line Sealing

  • Kwon, Sang-Jik;Kim, Jee-Hoon;Jang, Chan-Kyu;Park, Sung-Hyun;Whang, Ki-Woong;Lee, Kyung-Wha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.703-706
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    • 2004
  • This paper deals with the various sealing conditions in a vacuum and the discharge characteristics. The MgO thin film is prepared by e-beam evaporation method. Sealing process was performed in a vacuum at panel temperature of 430 $^{\circ}C$. We find the cracks on the MgO film surface, which results in higher discharge voltage and lower luminous efficiency. The vacuum in-line sealing technology does not require additional annealing process but induces the MgO cracks because of the high temperature sealing cycle in a vacuum. Therefore we modify the vacuum in-line sealing cycle which the MgO cracks are not found and the good characteristics of plasma displays are found in higher sealing pressure at sealing temperature of 430 $^{\circ}C$.

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Suppression of MgO hydration using Self-Assembled Monolayers

  • Lee, Kyung-Wha;Kim, Tae-Jun;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.533-535
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    • 2004
  • We suggest the use of a self-assembled ultra thin organic film that can suppress the hydration of MgO protective layer in AC-PDP. We analyzed the degree of hydration of MgO layer in AC-PDP by XPS when exposed to air after vacuum deposition which proved the effectiveness of the hydration prevention. We also made PDP test panels to demonstrate the improvement in the luminance and luminous efficiency when the hydration of MgO surface is suppressed by the use of self-assembled ultra thin organic film.

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A Study on the Accelerated Life-time Test method Of MgO thin film in the AC PDP

  • Park, Chung-Hoo;Choi, Min-Seok;Choi, Joon-Young;Kim, Dong-Hyun;Lee, Ho-Jun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.217-220
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    • 2002
  • In this paper, an accelerated lifetime test method of MgO thin film is suggested. The most important test factors are surface temperature of the PDP, gas pressure, the applied voltage and frequency. The standard test conditions are $50^{\circ}C$, 400Torr, 20% over voltage and 300kHz ,respectively. The accelerated lifetime of MgO is significantly varied with the MgO preparing conditions.

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