• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1840-1842
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• 1997

MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large $\gamma$-Coefficients. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore in this study. MgO protection layer is prepared on dielectric layer by R.F. magnetron sputtering with Mg target under various conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporatior.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.166-167
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.162.1-162
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.441-445
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• 1999

Alkaline earth metal oxides were added to the conventional MgO films as a protective layer for dielectric materials to have lower firing voltage(Vf) of the plasma display panel(PDP). Panels with various protective layers of MgO-alkaline earth metal oxides were prepared on glass by using e-beam evaporation and its effect on firing voltage characteristics were investigated. (Ba-Mg)O films had poor voltage characteristics because of higher activation energy of BaO. But, (Sr-Mg)O, (Ca-Mg)O and (Ca-Sr-Mg) O had better voltage characteristics than the conventional MgO. A mixture film of (Mg-Ca-Sr)O show the lowest firing voltage which is less than that of MgO by 20V. The chemical composition to have lowest firing voltage is MgO:SrO:CaO ratio of 6:2:2. The mixture of MgO-Alkaline earth metal oxides films showed good transmittance properties within the visual range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.433-437
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• 2002

Impact-collision ion scattering spectroscopy was applied to study the geometrical structure of epitaxially grown TiO layers on the MgO(100) surface. Hetero-epitaxial TiO layer was formed by thermal evaporation of titanium onto the MgO(100) surface followed by the exposure to oxygen at $400{\circ}$. The well-ordered TiO structure was confirmed by the impact-collision ion scattering spectroscopy and reflection high energy electron diffraction patterns. It is revealed that the Ti and O atoms are located on the on-top site of the MgO(100) surface and the TiO overlayers are composed of little three dimensional islands.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.307-310
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• 1998

In this paper, $Al_2$O$_3$/MgO belayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(Plasma Display Panel). $Al_2$O$_3$/MgO belayer were improved of roughness and it were condensed by annealing, and the result of XPS analysis for $Al_2$O$_3$/MgO belayer unchanged binding energy. To investigate electric characteristics, discharge properties of $Al_2$O$_3$/MgO belayer were compared with discharge minimum voltage for MgO monolayer through Ar discharge experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.241-241
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• 2007

We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

• Korean Journal of Crystallography
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• v.13 no.2
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• pp.57-62
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• 2002

Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of epitaxially grown TiO layers on a MgO(001) surface. The hetero-epitaxial TiO layer was deposited by thermal evaporation of titanium onto the MgO(001) surface and subsequent exposure to oxygen at 400℃. The well-ordered TiO structure was confirmed with the 1×1 RHEED pattern. TOF-ICISS results revealed that the TiO layer was formed at the on-top sites of the MgO(001) substrate and that the lateral lattice constant of TiO layer was the same as that of the MgO substrate. The surface of the deposited epitaxial TiO layer was smooth without the three dimensional islands.