$Al_2O_3$/MgO 유전체 보호막의 방전특성

Discharge Properties of $Al_2O_3$/MgO as a Dielectric Protection Layer

  • 정진만 (광운대학교 공대 전자재료공학과) ;
  • 신경 (광운대학교 공대 전자재료공학과) ;
  • 이영종 (여주대학 전자과) ;
  • 정홍배 (광운대학교 공대 전자재료공학과)
  • 발행 : 1998.11.01

초록

In this paper, $Al_2$O$_3$/MgO belayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(Plasma Display Panel). $Al_2$O$_3$/MgO belayer were improved of roughness and it were condensed by annealing, and the result of XPS analysis for $Al_2$O$_3$/MgO belayer unchanged binding energy. To investigate electric characteristics, discharge properties of $Al_2$O$_3$/MgO belayer were compared with discharge minimum voltage for MgO monolayer through Ar discharge experiments.

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